100VDS／±25VGS／170A(ID) N-Channel Enha ncement Mode MOSFET JT

1.产品概述         2.产品特点
3.应用范围       4.下载产品资料PDF文档
5.产品封装图                     6.电路原理图
7.功能概述       8.相关产品

一,产品概述(General Description)
Electrical Characteristics of CP Test (TA=25°C unless otherwise noted)

Symbol	Parameter	Test Conditions		Min.	Typ	Max.	Unit
Static Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS=0V,ID=250uA		100			V
IDSS	Zero Gate Voltage Drain Current	VDS=80V,VGS=0V				1	uA
IDSS	Zero Gate Voltage Drain Current		TJ=85°C			30	uA
VGS(th)
Gate Threshold Voltage	VDS=VGS,ID=250uA		2	2.8	4	V
IGSS	Gate Leakage Current	VGS=±25V, VDS=0V				±100	nA
RDS(on)	Drain-Source On-Resistance	VGS=10V, ID=30A			4.5	5.5	mΩ
VSD	Diode Forward Voltage	ISD=30A,VGS=0V				1.3	V
RG	Gate Resistance	VGS=0V, VDS=0V, Frequency=1MHz			2		Ω

IDSSZero Gate Voltage Drain CurrentuA

二.产品特点(Features)
VDSS=0V／VGSS=±25V／ID=1 0A
RDS(ON)=5 mΩ(max.)@VGS=10V
Low Dense Cell Design
Reliable and Rugged
Advanced trench process technology

三,应用范围 (Applications)
Synchronous Rectification
Power Management in Inverter System

四.下载产品资料PDF文档

JTM4110

五,产品封装图 (Package)

六.电路原理图

七,功能概述

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