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当前位置：首页 > 产品中心 > 功率器件 > N沟道MOSFETs > N-Channel, 30V, 6.2A, Power MOSFET CXMS5122,This device is suitable for use in DC-DC conversion Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in > 评论
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评论：N-Channel, 30V, 6.2A, Power MOSFET CXMS5122,This device is suitable for use in DC-DC conversion Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in
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本站网友 oumao18 ip:120.229.48.*
2025-05-28 02:18:24 发表
The CXMS5122 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product CXMS5122 is Pb-free.  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage
 
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