CXSD6282电压模式驱动双N通道mosfet的同步PWM控制器所有的控制监控和保护功能带欠压和过流保护的受控电源输出

发布时间:2020-04-21 16:26:16 浏览次数:328 作者:oumao18 来源:嘉泰姆
摘要:CXSD6282电压模式,驱动双N通道mosfet的同步PWM控制器该设备将所有的控制、监控和保护功能集成到一个单一的软件包中是一种电压模式,同步PWM控制器驱动双N通道mosfet。该装置将所有的控制、监控和保护功能集成到一个整体中,提供一个带欠压和过流保护的受控电源输出,CXSD6282 CXSD6282A为输出负载变化提供了良好的调节
CXSD6282电压模式驱动双N通道mosfet的同步PWM控制器所有的控制监控和保护功能带欠压和过流保护的受控电源输出

目录hrP嘉泰姆

1.产品概述                       2.产品特点hrP嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 hrP嘉泰姆
5.产品封装图                     6.电路原理图                   hrP嘉泰姆
7.功能概述                        8.相关产品hrP嘉泰姆

一,产品概述(General Description)      hrP嘉泰姆


 The CXSD6282 CXSD6282A is a voltage mode, synchronous PWM controller whichhrP嘉泰姆
drives dual N-channel MOSFETs. The device integrates all of the control, monitoring and protecting functions into a single package, provides one controlled power output with under-voltage and over-current protections.The CXSD6282 CXSD6282A provides excellent regulation for output load variation. The internal 0.6V temperature-compensated reference voltage is designed to meet the requirement of low output voltage applications. The device includes a 200kHz free-running triangle-wave oscillator that is adjustable from 50kHz to 1000kHz.hrP嘉泰姆
 The CXSD6282 CXSD6282A has been equipped with excellent protec-tion functions: POR, OCP, and UVP. The Power-On-Re-set (POR) circuit can monitor the VCC, EN, and OCSET voltage to make sure the supply voltage exceeds their threshold voltage while the controller is running. The Over-Current Protection (OCP) monitors the output cur-rent by using the voltage drop across the upper MOSFET’s RDS(ON). When the output current reaches the trip point, the controller will run the soft-start function until the fault events are removed. The Under-Voltage Protection (UVP)monitors the voltage at FB pin (V FB) for short-circuit protection. When the VFB is less than 50% of VREF, the controller will shutdown the IC directly. hrP嘉泰姆
二.产品特点(Features)hrP嘉泰姆


1.)Single 12V Power Supply RequiredhrP嘉泰姆
2.)0.6V Reference with 1% AccuracyhrP嘉泰姆
3.)Shutdown and Soft-Start FunctionhrP嘉泰姆
4.)1.)Programmable Frequency Range from 50 kHz to 1000kHzhrP嘉泰姆
5.)Voltage Mode PWM Control DesignhrP嘉泰姆
6.)Up to 100% Duty CyclehrP嘉泰姆
7.)Under-Voltage Protection (UVP)hrP嘉泰姆
8.)Over-Current Protection (OCP) SOP-14 PackagehrP嘉泰姆
9.)Lead Free and Green Devices Available (RoHS Compliant)hrP嘉泰姆
三,应用范围 (Applications)hrP嘉泰姆


   Graphic CardshrP嘉泰姆
四.下载产品资料PDF文档 hrP嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持hrP嘉泰姆

 QQ截图20160419174301.jpghrP嘉泰姆

 hrP嘉泰姆

五,产品封装图 (Package)hrP嘉泰姆


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六.电路原理图
blob.pnghrP嘉泰姆
七,功能概述
Layout ConsiderationhrP嘉泰姆
 In any high switching frequency converter, a correct layout is important to ensure proper operationhrP嘉泰姆
of the regulator.With power devices switching at 300kHz,the resulting cur-rent transient will causehrP嘉泰姆
voltage spike across the i n t e r c o n n e c t i n g impedance and parasitic circuit elements. As anhrP嘉泰姆
example, consider the turn-off transition of the PWM MOSFET. Before turn-off, the MOSFET ishrP嘉泰姆
carrying the full load current. During turn-off, current stops flowing in the MOSFET and ishrP嘉泰姆
free-wheeling by the lower MOSFET and parasitic diode. Any parasitic inductance of the circuithrP嘉泰姆
generates a large voltage spike during the switching interval. In general, using short andhrP嘉泰姆
wide printed circuit traces should minimize interconnect-ing impedances and the magnitudehrP嘉泰姆
of voltage spike.And signal and power grounds are to be kept separating till combined usinghrP嘉泰姆
the ground plane construction or single point grounding. Figure 10 illustrates the layout,hrP嘉泰姆
with bold lines indicating high current paths; these traces must be short and wide. ComponentshrP嘉泰姆
along the bold lines should be placed lose together. Below is a checklist for your layout:hrP嘉泰姆
- Keep the switching nodes (UGATE, LGATE, and PHASE) away from sensitive small signal nodeshrP嘉泰姆
since these nodes are fast moving signals. Therefore,keep traces to these nodes as short as possible.hrP嘉泰姆
- The traces from the gate drivers to the MOSFETs (UGATE, LGATE) should be short and wide.hrP嘉泰姆
- Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible.hrP嘉泰姆
Minimizing the impedance with wide layout plane between the two pads reduces the voltage bounce ofhrP嘉泰姆
the node.hrP嘉泰姆
- Decoupling capacitor, compensation component, the resistor dividers, boot capacitors, and SS capacitorshrP嘉泰姆
should be close their pins. (For example, place the decoupling ceramic capacitor near the drain of thehrP嘉泰姆
high-side MOSFET as close as possible. The bulk capacitors are also placed near the drain).hrP嘉泰姆
- The input capacitor should be near the drain of the upper MOSFET; the output capacitor should be nearhrP嘉泰姆
the loads. The input capacitor GND should be close to the output capacitor GND and the lower MOSFEThrP嘉泰姆
GND.hrP嘉泰姆
- The drain of the MOSFETs (VIN and PHASE nodes)should be a large plane for heat sinking.

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