CXSD62106|A 同步buck-PWM控制器来产生VDDQ源极和陷极LDO线性调节器来产生VTT DDR2和DDR3内存提供完整的电源

发布时间:2020-04-22 16:02:14 浏览次数:398 作者:oumao18 来源:嘉泰姆
摘要:CXSD62106|A集成了一个同步buck-PWM控制器来产生VDDQ,一种产生VTT的源极和陷极LDO线性调节器。它提供了DDR2和DDR3存储系统的完整电源。它提供最低的在空间处于溢价的系统中的解决方案总成本。CXSD62106/A提供出色的瞬态响应和准确的直流电PFM或PWM模式下的电压输出。在脉冲频率模式(PFM)中,CXSD62106/A通过加载调制开关频率在轻到重负载上提供非常高的效率
CXSD62106|A 同步buck-PWM控制器来产生VDDQ源极和陷极LDO线性调节器来产生VTT DDR2和DDR3内存提供完整的电源

目录aES嘉泰姆

1.产品概述                       2.产品特点aES嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 aES嘉泰姆
5.产品封装图                     6.电路原理图                   aES嘉泰姆
7.功能概述                        8.相关产品aES嘉泰姆

一,产品概述(General Description)         aES嘉泰姆
      The CXSD62106/A integrates a synchronous buck PWM controller to generateaES嘉泰姆
VDDQ, a sourcing and sinking LDO linear regulator to generate VTT. It providesaES嘉泰姆
a complete power supply for DDR2 and DDR3 memory system. It offers the lowestaES嘉泰姆
total solution cost in system where space is at a premium.aES嘉泰姆
      The CXSD62106/A provides excellent transient response  and accurate DC aES嘉泰姆

voltage output in either PFM or PWM Mode. In Pulse Frequency Mode (PFM), the CXSD62106/A provides very high efficiency over light to heavy loads with loading-modulated switching frequencies. On TQFN4x4- 24A package, the Forced PWM aES嘉泰姆

Mode works nearly at con-stant frequency for low-noise requirements.aES嘉泰姆
The CXSD62106/A is equipped with accurate current-limit,output under-voltage,aES嘉泰姆

and output over-voltage protections.A Power-On-Reset function monitors the aES嘉泰姆

voltage on VCC prevents wrong operation during power on.The LDO is designed aES嘉泰姆

to provide a regulated voltage with bi-directional output current for DDR-SDRAM termination.The device integrates two power transistors to source or sink current aES嘉泰姆

up to 1.5A. It also incorporates current-limit and thermal shutdown protection.aES嘉泰姆

The output voltage of LDO tracks the voltage at VTTREF pin. An internal resistoraES嘉泰姆

divider is used to provide a half voltage of VDDQ for VTTREF and VTT Voltage. aES嘉泰姆

The VTT output voltage is only requiring 20μF of ceramic output capacitance foraES嘉泰姆

 stability and fast transient response. The S3 and S5 pins provide the sleep stateaES嘉泰姆

 for VTT (S3 state)and suspend state (S4/S5 state) for device, when S5 andaES嘉泰姆
S3 are both pulled low the device provides the soft-off for VTT and VTTREF.aES嘉泰姆
The CXSD62106/A is available in 4mmx4mm 24-pin TQFN package, and the aES嘉泰姆

CXSD62106A is available in 3mmx3mm 20-pin TQFN package.aES嘉泰姆
二.产品特点(Features)aES嘉泰姆
Buck Controller (VDDQ)aES嘉泰姆
·  High Input Voltages Range from 3V to 28V Input PoweraES嘉泰姆
Provide 1.8V (DDR2), 1.5V (DDR3) or AdjustableaES嘉泰姆
Output Voltage from 0.75V to 5.5VaES嘉泰姆
- ±1% Accuracy Over-TemperatureaES嘉泰姆
Integrated MOSFET Drivers and Bootstrap DiodeaES嘉泰姆
Excellent Line and Load Transient ResponsesaES嘉泰姆
PFM Mode for Increased Light Load EfficiencyaES嘉泰姆
Constant-On-Time Controller SchemeaES嘉泰姆
- Switching Frequency Compensation for PWMModeaES嘉泰姆
- Adjustable Switching Frequency from 100kHzaES嘉泰姆
to 550kHz in PWM Mode with DC Output CurrentaES嘉泰姆
Integrated MOSFET Drivers and Bootstrap DiodeaES嘉泰姆
S3 and S5 Pins Control The Device in S0, S3, or S4/S5 StateaES嘉泰姆
Power Good MonitoringaES嘉泰姆
70% Under-Voltage Protection (UVP)aES嘉泰姆
125% Over-Voltage Protection (OVP)aES嘉泰姆
Adjustable Current-Limit ProtectionaES嘉泰姆
Using Sense Low-Side MOSFET RDS(ON)aES嘉泰姆
±1.5A LDO Section (VTT)aES嘉泰姆
Souring or Sinking Current up to 1.5AaES嘉泰姆
Fast Transient Response for Output VoltageaES嘉泰姆
Output Ceramic Capacitors Support at Least 10μF MLCCaES嘉泰姆
VTT and VTTREF Track at Half the VDDQSNS by Internal DivideraES嘉泰姆
±20mV Accuracy for VTT and VTTREFaES嘉泰姆

Independent Over-Current-Limit (OCL) aES嘉泰姆

Thermal Shutdown ProtectionaES嘉泰姆

QFN-24 4mmx4mm Thin Package (TQFN4x4-24A)aES嘉泰姆
for CXSD62106 and QFN-20 3mmx3mm ThinaES嘉泰姆
Package (TQFN3x3-20) for CXSD62106AaES嘉泰姆
Lead Free and Green Devices Available
aES嘉泰姆

三,应用范围 (Applications)aES嘉泰姆


DDR2, and DDR3 Memory Power SuppliesaES嘉泰姆
SSTL-2 SSTL-18 and HSTL TerminationaES嘉泰姆
四.下载产品资料PDF文档 aES嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持aES嘉泰姆

 QQ截图20160419174301.jpgaES嘉泰姆

五,产品封装图 (Package)aES嘉泰姆


blob.pngblob.pngaES嘉泰姆

六.电路原理图aES嘉泰姆


blob.pngaES嘉泰姆

七,功能概述aES嘉泰姆


Layout Consideration (Cont.)aES嘉泰姆

· Keep the switching nodes (UGATE, LGATE, BOOT, and PHASE) away from sensitive small signal nodesaES嘉泰姆
(VDDQSET, VTTREF, CS, and MODE) since these nodes are fast mov ing signals. Therefore, keep tracesaES嘉泰姆
to these nodes as short as possible and there should be no other weak signal traces in parallel with thesesaES嘉泰姆
traces on any layer.aES嘉泰姆
 The signals going through theses traces have both high dv/dt and high di/dt, with high peak charging andaES嘉泰姆
discharging current. The traces from the gate drivers to the MOSFETs (UGATE and LGATE) should be shortaES嘉泰姆
and wide.aES嘉泰姆
Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible. Mini-aES嘉泰姆
mizing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node.
ceramic capacitor near the drain of the high-side MOSFET as close as possible. The bulk capacitors areaES嘉泰姆
also placednear the drain).aES嘉泰姆
The input capacitor should be near the drain of the up per MOSFET; the high quality ceramic decoupling ca-aES嘉泰姆
pacitor can be put close to the VCC and GND pins; the VTTREF decoupling capasitor should be close to theaES嘉泰姆
VTTREF pin and GND; the VDDQ and VTT output ca-pacitors should be located right across their output pinaES嘉泰姆
as clase as possible to the part to minimize parasitics.aES嘉泰姆
The input capacitor GND should be close to the output capacitor GND and the lower MOSFET GND.aES嘉泰姆
· The drain of the MOSFETs (VIN and PHASE nodes) should be a large plane for heat sinking. And PHASEaES嘉泰姆
pin traces are also the return path for UGATE. Connect this pin to the converter’s upper MOSFET source.aES嘉泰姆
· The CXSD62106/A used ripple mode control. Build the resistor divider close to the VDDQSET pin so that theaES嘉泰姆
high imped ance trace is shorter when the output volt-age is in ad justable mode. And the VDDQSET pinaES嘉泰姆
traces can’t be closed to the switching signal traces (UGATE, LGATE, BOOT, and PHASE)aES嘉泰姆
 The PGND trace should be a separate trace, and inde pendently go to the source of the low-side MOSFETsaES嘉泰姆
for current limit accuracy.Decoupling capacitor, the resistor dividers, boot capacitors, and current limit stetting resistor should be close their pins. (For example, place the decouplingaES嘉泰姆

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