CXSD62106|A 同步buck-PWM控制器来产生VDDQ源极和陷极LDO线性调节器来产生VTT DDR2和DDR3内存提供完整的电源

发布时间:2020-04-22 16:02:14 浏览次数:352 作者:oumao18 来源:嘉泰姆
摘要:CXSD62106|A集成了一个同步buck-PWM控制器来产生VDDQ,一种产生VTT的源极和陷极LDO线性调节器。它提供了DDR2和DDR3存储系统的完整电源。它提供最低的在空间处于溢价的系统中的解决方案总成本。CXSD62106/A提供出色的瞬态响应和准确的直流电PFM或PWM模式下的电压输出。在脉冲频率模式(PFM)中,CXSD62106/A通过加载调制开关频率在轻到重负载上提供非常高的效率
CXSD62106|A 同步buck-PWM控制器来产生VDDQ源极和陷极LDO线性调节器来产生VTT DDR2和DDR3内存提供完整的电源

目录QCv嘉泰姆

1.产品概述                       2.产品特点QCv嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 QCv嘉泰姆
5.产品封装图                     6.电路原理图                   QCv嘉泰姆
7.功能概述                        8.相关产品QCv嘉泰姆

一,产品概述(General Description)         QCv嘉泰姆
      The CXSD62106/A integrates a synchronous buck PWM controller to generateQCv嘉泰姆
VDDQ, a sourcing and sinking LDO linear regulator to generate VTT. It providesQCv嘉泰姆
a complete power supply for DDR2 and DDR3 memory system. It offers the lowestQCv嘉泰姆
total solution cost in system where space is at a premium.QCv嘉泰姆
      The CXSD62106/A provides excellent transient response  and accurate DC QCv嘉泰姆

voltage output in either PFM or PWM Mode. In Pulse Frequency Mode (PFM), the CXSD62106/A provides very high efficiency over light to heavy loads with loading-modulated switching frequencies. On TQFN4x4- 24A package, the Forced PWM QCv嘉泰姆

Mode works nearly at con-stant frequency for low-noise requirements.QCv嘉泰姆
The CXSD62106/A is equipped with accurate current-limit,output under-voltage,QCv嘉泰姆

and output over-voltage protections.A Power-On-Reset function monitors the QCv嘉泰姆

voltage on VCC prevents wrong operation during power on.The LDO is designed QCv嘉泰姆

to provide a regulated voltage with bi-directional output current for DDR-SDRAM termination.The device integrates two power transistors to source or sink current QCv嘉泰姆

up to 1.5A. It also incorporates current-limit and thermal shutdown protection.QCv嘉泰姆

The output voltage of LDO tracks the voltage at VTTREF pin. An internal resistorQCv嘉泰姆

divider is used to provide a half voltage of VDDQ for VTTREF and VTT Voltage. QCv嘉泰姆

The VTT output voltage is only requiring 20μF of ceramic output capacitance forQCv嘉泰姆

 stability and fast transient response. The S3 and S5 pins provide the sleep stateQCv嘉泰姆

 for VTT (S3 state)and suspend state (S4/S5 state) for device, when S5 andQCv嘉泰姆
S3 are both pulled low the device provides the soft-off for VTT and VTTREF.QCv嘉泰姆
The CXSD62106/A is available in 4mmx4mm 24-pin TQFN package, and the QCv嘉泰姆

CXSD62106A is available in 3mmx3mm 20-pin TQFN package.QCv嘉泰姆
二.产品特点(Features)QCv嘉泰姆
Buck Controller (VDDQ)QCv嘉泰姆
·  High Input Voltages Range from 3V to 28V Input PowerQCv嘉泰姆
Provide 1.8V (DDR2), 1.5V (DDR3) or AdjustableQCv嘉泰姆
Output Voltage from 0.75V to 5.5VQCv嘉泰姆
- ±1% Accuracy Over-TemperatureQCv嘉泰姆
Integrated MOSFET Drivers and Bootstrap DiodeQCv嘉泰姆
Excellent Line and Load Transient ResponsesQCv嘉泰姆
PFM Mode for Increased Light Load EfficiencyQCv嘉泰姆
Constant-On-Time Controller SchemeQCv嘉泰姆
- Switching Frequency Compensation for PWMModeQCv嘉泰姆
- Adjustable Switching Frequency from 100kHzQCv嘉泰姆
to 550kHz in PWM Mode with DC Output CurrentQCv嘉泰姆
Integrated MOSFET Drivers and Bootstrap DiodeQCv嘉泰姆
S3 and S5 Pins Control The Device in S0, S3, or S4/S5 StateQCv嘉泰姆
Power Good MonitoringQCv嘉泰姆
70% Under-Voltage Protection (UVP)QCv嘉泰姆
125% Over-Voltage Protection (OVP)QCv嘉泰姆
Adjustable Current-Limit ProtectionQCv嘉泰姆
Using Sense Low-Side MOSFET RDS(ON)QCv嘉泰姆
±1.5A LDO Section (VTT)QCv嘉泰姆
Souring or Sinking Current up to 1.5AQCv嘉泰姆
Fast Transient Response for Output VoltageQCv嘉泰姆
Output Ceramic Capacitors Support at Least 10μF MLCCQCv嘉泰姆
VTT and VTTREF Track at Half the VDDQSNS by Internal DividerQCv嘉泰姆
±20mV Accuracy for VTT and VTTREFQCv嘉泰姆

Independent Over-Current-Limit (OCL) QCv嘉泰姆

Thermal Shutdown ProtectionQCv嘉泰姆

QFN-24 4mmx4mm Thin Package (TQFN4x4-24A)QCv嘉泰姆
for CXSD62106 and QFN-20 3mmx3mm ThinQCv嘉泰姆
Package (TQFN3x3-20) for CXSD62106AQCv嘉泰姆
Lead Free and Green Devices Available
QCv嘉泰姆

三,应用范围 (Applications)QCv嘉泰姆


DDR2, and DDR3 Memory Power SuppliesQCv嘉泰姆
SSTL-2 SSTL-18 and HSTL TerminationQCv嘉泰姆
四.下载产品资料PDF文档 QCv嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持QCv嘉泰姆

 QQ截图20160419174301.jpgQCv嘉泰姆

五,产品封装图 (Package)QCv嘉泰姆


blob.pngblob.pngQCv嘉泰姆

六.电路原理图QCv嘉泰姆


blob.pngQCv嘉泰姆

七,功能概述QCv嘉泰姆


Layout Consideration (Cont.)QCv嘉泰姆

· Keep the switching nodes (UGATE, LGATE, BOOT, and PHASE) away from sensitive small signal nodesQCv嘉泰姆
(VDDQSET, VTTREF, CS, and MODE) since these nodes are fast mov ing signals. Therefore, keep tracesQCv嘉泰姆
to these nodes as short as possible and there should be no other weak signal traces in parallel with thesesQCv嘉泰姆
traces on any layer.QCv嘉泰姆
 The signals going through theses traces have both high dv/dt and high di/dt, with high peak charging andQCv嘉泰姆
discharging current. The traces from the gate drivers to the MOSFETs (UGATE and LGATE) should be shortQCv嘉泰姆
and wide.QCv嘉泰姆
Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible. Mini-QCv嘉泰姆
mizing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node.
ceramic capacitor near the drain of the high-side MOSFET as close as possible. The bulk capacitors areQCv嘉泰姆
also placednear the drain).QCv嘉泰姆
The input capacitor should be near the drain of the up per MOSFET; the high quality ceramic decoupling ca-QCv嘉泰姆
pacitor can be put close to the VCC and GND pins; the VTTREF decoupling capasitor should be close to theQCv嘉泰姆
VTTREF pin and GND; the VDDQ and VTT output ca-pacitors should be located right across their output pinQCv嘉泰姆
as clase as possible to the part to minimize parasitics.QCv嘉泰姆
The input capacitor GND should be close to the output capacitor GND and the lower MOSFET GND.QCv嘉泰姆
· The drain of the MOSFETs (VIN and PHASE nodes) should be a large plane for heat sinking. And PHASEQCv嘉泰姆
pin traces are also the return path for UGATE. Connect this pin to the converter’s upper MOSFET source.QCv嘉泰姆
· The CXSD62106/A used ripple mode control. Build the resistor divider close to the VDDQSET pin so that theQCv嘉泰姆
high imped ance trace is shorter when the output volt-age is in ad justable mode. And the VDDQSET pinQCv嘉泰姆
traces can’t be closed to the switching signal traces (UGATE, LGATE, BOOT, and PHASE)QCv嘉泰姆
 The PGND trace should be a separate trace, and inde pendently go to the source of the low-side MOSFETsQCv嘉泰姆
for current limit accuracy.Decoupling capacitor, the resistor dividers, boot capacitors, and current limit stetting resistor should be close their pins. (For example, place the decouplingQCv嘉泰姆

八,相关产品              更多同类产品...... QCv嘉泰姆


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tectuQCv嘉泰姆

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Output QCv嘉泰姆

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(A) QCv嘉泰姆

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QSOP-16QCv嘉泰姆

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1   QCv嘉泰姆

1     QCv嘉泰姆

30QCv嘉泰姆

2.9    QCv嘉泰姆

13.2QCv嘉泰姆

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8000QCv嘉泰姆

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CXSD6274CQCv嘉泰姆

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5000QCv嘉泰姆

CXSD6275QCv嘉泰姆

QFN4x4-24QCv嘉泰姆

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0.6QCv嘉泰姆

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5000QCv嘉泰姆

CXSD6276QCv嘉泰姆

SOP-8QCv嘉泰姆

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1QCv嘉泰姆

1QCv嘉泰姆

20QCv嘉泰姆

2.2QCv嘉泰姆

13.2QCv嘉泰姆

0.8QCv嘉泰姆

5~12QCv嘉泰姆

2100QCv嘉泰姆

CXSD6276AQCv嘉泰姆

SOP-8QCv嘉泰姆

VMQCv嘉泰姆

1QCv嘉泰姆

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20QCv嘉泰姆

2.2QCv嘉泰姆

13.2QCv嘉泰姆

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5~12QCv嘉泰姆

2100QCv嘉泰姆

CXSD6277/A/BQCv嘉泰姆

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1QCv嘉泰姆

1QCv嘉泰姆

5QCv嘉泰姆

5QCv嘉泰姆

13.2QCv嘉泰姆

1.25|0.8QCv嘉泰姆

5~12QCv嘉泰姆

3000QCv嘉泰姆

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SOP-8QCv嘉泰姆

VMQCv嘉泰姆

1QCv嘉泰姆

1QCv嘉泰姆

10QCv嘉泰姆

3.3QCv嘉泰姆

5.5QCv嘉泰姆

0.8QCv嘉泰姆

5QCv嘉泰姆

2100QCv嘉泰姆

CXSD6279BQCv嘉泰姆

SOP-14QCv嘉泰姆

VM   QCv嘉泰姆

1QCv嘉泰姆

1QCv嘉泰姆

10QCv嘉泰姆

5QCv嘉泰姆

13.2QCv嘉泰姆

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12QCv嘉泰姆

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1QCv嘉泰姆

2QCv嘉泰姆

20QCv嘉泰姆

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13.2QCv嘉泰姆

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5~12QCv嘉泰姆

4000QCv嘉泰姆

CXSD6281NQCv嘉泰姆

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QSOP16QCv嘉泰姆

QFN-16QCv嘉泰姆

VMQCv嘉泰姆

1QCv嘉泰姆

1QCv嘉泰姆

30QCv嘉泰姆

2.9QCv嘉泰姆

13.2QCv嘉泰姆

0.9QCv嘉泰姆

12QCv嘉泰姆

4000QCv嘉泰姆

CXSD6282QCv嘉泰姆

SOP-14QCv嘉泰姆

VMQCv嘉泰姆

1QCv嘉泰姆

1QCv嘉泰姆

30QCv嘉泰姆

2.2QCv嘉泰姆

13.2QCv嘉泰姆

0.6QCv嘉泰姆

12QCv嘉泰姆

5000QCv嘉泰姆

CXSD6282AQCv嘉泰姆

SOP-14QCv嘉泰姆

VMQCv嘉泰姆

1QCv嘉泰姆

1QCv嘉泰姆

30QCv嘉泰姆

2.2QCv嘉泰姆

13.2QCv嘉泰姆

0.6QCv嘉泰姆

12QCv嘉泰姆

5000QCv嘉泰姆

CXSD6283QCv嘉泰姆

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1800QCv嘉泰姆

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5000QCv嘉泰姆

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1QCv嘉泰姆

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10QCv嘉泰姆

5QCv嘉泰姆

13.2QCv嘉泰姆

0.8QCv嘉泰姆

12QCv嘉泰姆

3000QCv嘉泰姆

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VMQCv嘉泰姆

1QCv嘉泰姆

1QCv嘉泰姆

30QCv嘉泰姆

2.9QCv嘉泰姆

13.2QCv嘉泰姆

1.2QCv嘉泰姆

12QCv嘉泰姆

3000QCv嘉泰姆

CXSD6288QCv嘉泰姆

SSOP28QCv嘉泰姆

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