单相定时同步的PWM控制器CXSD62102驱动N通道mosfet瞬态响应和准确的直流电压以PFM或PWM模式输出

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发表时间：2020-04-22浏览次数：135

单相定时同步的PWM控制器CXSD62102驱动N通道mosfet瞬态响应和准确的直流电压以PFM或PWM模式输出

目录Uos嘉泰姆

1.产品概述         2.产品特点Uos嘉泰姆
3.应用范围       4.下载产品资料PDF文档 Uos嘉泰姆
5.产品封装图                     6.电路原理图             Uos嘉泰姆
7.功能概述       8.相关产品Uos嘉泰姆

一,产品概述(General Description) Uos嘉泰姆
The CXSD62102 is a single-phase, constant on-time, synchronous PWMUos嘉泰姆
controller, which drives N-channel MOSFETs. The CXSD62102 steps down highUos嘉泰姆
voltage to generate low-voltage chipset or RAM supplies in notebook computers.Uos嘉泰姆
The CXSD62102 provides excellent transient response and accurate DC voltageUos嘉泰姆
output in either PFM or PWM Mode.In Pulse Frequency Mode (PFM), theCXSD62102 provides very high efficiency over light to heavy loads with loading-Uos嘉泰姆
modulated switching frequencies. In PWM Mode, the converter works nearly atUos嘉泰姆
constant frequency for low-noise requirements. CXSD62102 is built in remoteUos嘉泰姆
sense function for applications that require remote sense.The CXSD62102 isUos嘉泰姆
equipped with accurate positive current limit, output under-voltage, and outputUos嘉泰姆
over-voltage protections, perfect for NB applications. The Power-On-ResetUos嘉泰姆
function monitors the voltage on VCC to prevent wrong operation duringUos嘉泰姆
power-on. The CXSD62102 has a 1ms digital soft start and built-in an integratedUos嘉泰姆
output discharge device for soft stop. An internal integrated soft-start ramps upUos嘉泰姆
the output voltage with programmable slew rate to reduce the start-up current.Uos嘉泰姆
A soft-stop function actively discharges the output capacitors.Uos嘉泰姆
The CXSD62102 is available in 16pin TQFN3x3-16 package respectively.Uos嘉泰姆
二.产品特点(Features)Uos嘉泰姆
1.)Adjustable Output Voltage from +0.6V to +3.3VUos嘉泰姆
- 0.6V Reference VoltageUos嘉泰姆
- ±0.6% Accuracy Over-TemperatureUos嘉泰姆
2.)Operates from An Input Battery Voltage Range of +1.8V to +28VUos嘉泰姆
3.)Remote Feedback Sense for Excellent Output VoltageUos嘉泰姆
4.)REFIN Function for Over-clocking Purpose from 0.5V~2.5V rangeUos嘉泰姆
5.)Power-On-Reset Monitoring on VCC pinUos嘉泰姆
6.)Excellent line and load transient responsesUos嘉泰姆
7.)PFM mode for increased light load efficiencyUos嘉泰姆
8.)Programmable PWM Frequency from 100kHz to 500kHzUos嘉泰姆
9.)Selectable Forced PWM or automatic PFM/PWM modeUos嘉泰姆
10.)Built in 30A Output current driving capabilityIntegrate MOSFET DriversUos嘉泰姆
11.)Integrated Bootstrap Forward P-CH MOSFETUos嘉泰姆
12.)Adjustable Integrated Soft-Start and Soft-Stop Power Good MonitoringUos嘉泰姆
13.)70% Under-Voltage ProtectionUos嘉泰姆
14.)125% Over-Voltage Protection TQFN3x3-16 PackageUos嘉泰姆
15.)Lead Free and Green Devices AvailableUos嘉泰姆
三,应用范围 (Applications)Uos嘉泰姆
NotebookUos嘉泰姆
Table PCUos嘉泰姆
Hand-Held PortableUos嘉泰姆
AIO PCUos嘉泰姆
四.下载产品资料PDF文档 Uos嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！Uos嘉泰姆

QQ截图20160419174301.jpg Uos嘉泰姆

五,产品封装图 (Package)Uos嘉泰姆

Uos嘉泰姆

六.电路原理图Uos嘉泰姆

Uos嘉泰姆
Uos嘉泰姆

七,功能概述Uos嘉泰姆

Input Capacitor Selection (Cont.)Uos嘉泰姆
higher than the maximum input voltage. The maximum RMS current rating requirement is approximately IOUT/2,where IOUT is the load current. During power-up, the input capacitors have to handle great amount of surge current.For low-duty notebook appliactions, ceramic capacitor is recommended. The capacitors must be connected be-tween the drain of high-side MOSFET and the source of low-side MOSFET with very low-impeadance PCB layout. Uos嘉泰姆
MOSFET SelectionUos嘉泰姆
The application for a notebook battery with a maximum voltage of 24V, at least a minimum 30V MOSFETs shouldUos嘉泰姆
be used. The design has to trade off the gate charge with the RDS(ON) of the MOSFET:For the low-side MOSFET, before it is turned on, the body diode has been conducting. The low-side MOSFET driver will not charge the miller capacitor of this MOSFET.Uos嘉泰姆
In the turning off process of the low-side MOSFET, the load current will shift to the body diode first. The high dv/dt of the phase node voltage will charge the miller capaci-tor through the low-side MOSFET driver sinking current path. This results in much less switchingUos嘉泰姆
loss of the low-side MOSFETs. The duty cycle is often very small in high battery voltage applications, and the low-side MOSFET will conduct most of the switching cycle; therefore, when using smaller RDS(ON) of the low-side MOSFET, the con-verter can reduce power loss. The gate charge for this MOSFET is usually the secondary consideration. The high-side MOSFET does not have this zero voltage switch-ing condition; in addition, it conducts for less time com-pared to the low-side MOSFET, so the switching loss tends to be dominant. Priority should be given to the MOSFETs with less gate charge, so that both the gate driver loss and switching loss will be minimized.Uos嘉泰姆
The selection of the N-channel power MOSFETs are determined by the R DS(ON), reversing transfer capaci-tance (CRSS) and maximum output current requirement.The losses in the MOSFETs have two components:Uos嘉泰姆
conduction loss and transition loss. For the high-side and low-side MOSFETs, the losses are approximatelyUos嘉泰姆
given by the following equations:Uos嘉泰姆
Phigh-side = IOUT (1+ TC)(RDS(ON))D + (0.5)( IOUT)(VIN)( tSW)FSWUos嘉泰姆
Plow-side = IOUT (1+ TC)(RDS(ON))(1-D) is the load current TC is the temperature dependency of RDS(ON)Uos嘉泰姆
FSW is the switching frequency tSW is the switching interval D is the duty cycleNote that both MOSFETs have conduction losses while the high-side MOSFET includes an additional transition loss.The switching interval, tSW, is the function of the reverse transfer capacitance CRSS. The (1+TC) term is a factor in the temperature dependency of the RDS(ON) and can be extracted from the “RDS(ON) vs. Temperature” curve of the power MOSFET.Uos嘉泰姆
Layout ConsiderationUos嘉泰姆
In any high switching frequency converter, a correct layout is important to ensure proper operation of the regulator.Uos嘉泰姆
With power devices switching at higher frequency, the resulting current transient will cause voltage spike acrossUos嘉泰姆
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transitionUos嘉泰姆
of the PWM MOSFET. Before turn-off condition, the MOSFET is carrying the full load current. During turn-off,Uos嘉泰姆
current stops flowing in the MOSFET and is freewheeling by the low side MOSFET and parasitic diode. Any parasiticUos嘉泰姆
inductance of the circuit generates a large voltage spike during the switching interval. In general, using short andUos嘉泰姆
wide printed circuit traces should minimize interconnect-ing impedances and the magnitude of voltage spike.Uos嘉泰姆
Besides, signal and power grounds are to be kept sepa-rating and finally combined using ground plane construc-Uos嘉泰姆
tion or single point grounding. The best tie-point between the signal ground and the power ground is at the nega-Uos嘉泰姆
tive side of the output capacitor on each channel, where there is less noise. Noisy traces beneath the IC are notUos嘉泰姆

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CXSD6273Uos嘉泰姆	SOP-14Uos嘉泰姆 QSOP-16Uos嘉泰姆 QFN4x4-16Uos嘉泰姆	VM Uos嘉泰姆	1 Uos嘉泰姆	1 Uos嘉泰姆	30Uos嘉泰姆	2.9 Uos嘉泰姆	13.2Uos嘉泰姆	0.9Uos嘉泰姆	12 Uos嘉泰姆	8000Uos嘉泰姆
CXSD6274Uos嘉泰姆	SOP-8Uos嘉泰姆	VM Uos嘉泰姆	1Uos嘉泰姆	1Uos嘉泰姆	20Uos嘉泰姆	2.9 Uos嘉泰姆	13.2 Uos嘉泰姆	0.8Uos嘉泰姆	12Uos嘉泰姆	5000Uos嘉泰姆
CXSD6274CUos嘉泰姆	SOP-8Uos嘉泰姆	VMUos嘉泰姆	1Uos嘉泰姆	1Uos嘉泰姆	20Uos嘉泰姆	2.9Uos嘉泰姆	13.2Uos嘉泰姆	0.8Uos嘉泰姆	12Uos嘉泰姆	5000Uos嘉泰姆
CXSD6275Uos嘉泰姆	QFN4x4-24Uos嘉泰姆	VMUos嘉泰姆	2Uos嘉泰姆	1Uos嘉泰姆	60Uos嘉泰姆	3.1Uos嘉泰姆	13.2Uos嘉泰姆	0.6Uos嘉泰姆	12Uos嘉泰姆	5000Uos嘉泰姆
CXSD6276Uos嘉泰姆	SOP-8Uos嘉泰姆	VMUos嘉泰姆	1Uos嘉泰姆	1Uos嘉泰姆	20Uos嘉泰姆	2.2Uos嘉泰姆	13.2Uos嘉泰姆	0.8Uos嘉泰姆	5~12Uos嘉泰姆	2100Uos嘉泰姆
CXSD6276AUos嘉泰姆	SOP-8Uos嘉泰姆	VMUos嘉泰姆	1Uos嘉泰姆	1Uos嘉泰姆	20Uos嘉泰姆	2.2Uos嘉泰姆	13.2Uos嘉泰姆	0.8Uos嘉泰姆	5~12Uos嘉泰姆	2100Uos嘉泰姆
CXSD6277/A/BUos嘉泰姆	SOP8\|TSSOP8Uos嘉泰姆	VMUos嘉泰姆	1Uos嘉泰姆	1Uos嘉泰姆	5Uos嘉泰姆	5Uos嘉泰姆	13.2Uos嘉泰姆	1.25\|0.8Uos嘉泰姆	5~12Uos嘉泰姆	3000Uos嘉泰姆
CXSD6278Uos嘉泰姆	SOP-8Uos嘉泰姆	VMUos嘉泰姆	1Uos嘉泰姆	1Uos嘉泰姆	10Uos嘉泰姆	3.3Uos嘉泰姆	5.5Uos嘉泰姆	0.8Uos嘉泰姆	5Uos嘉泰姆	2100Uos嘉泰姆
CXSD6279BUos嘉泰姆	SOP-14Uos嘉泰姆	VM Uos嘉泰姆	1Uos嘉泰姆	1Uos嘉泰姆	10Uos嘉泰姆	5Uos嘉泰姆	13.2Uos嘉泰姆	0.8Uos嘉泰姆	12Uos嘉泰姆	2000Uos嘉泰姆
CXSD6280Uos嘉泰姆	TSSOP-24Uos嘉泰姆 \|QFN5x5-32Uos嘉泰姆	VMUos嘉泰姆	1Uos嘉泰姆	2Uos嘉泰姆	20Uos嘉泰姆	5Uos嘉泰姆	13.2Uos嘉泰姆	0.6Uos嘉泰姆	5~12Uos嘉泰姆	4000Uos嘉泰姆
CXSD6281NUos嘉泰姆	SOP14Uos嘉泰姆 QSOP16Uos嘉泰姆 QFN-16Uos嘉泰姆	VMUos嘉泰姆	1Uos嘉泰姆	1Uos嘉泰姆	30Uos嘉泰姆	2.9Uos嘉泰姆	13.2Uos嘉泰姆	0.9Uos嘉泰姆	12Uos嘉泰姆	4000Uos嘉泰姆
CXSD6282Uos嘉泰姆	SOP-14Uos嘉泰姆	VMUos嘉泰姆	1Uos嘉泰姆	1Uos嘉泰姆	30Uos嘉泰姆	2.2Uos嘉泰姆	13.2Uos嘉泰姆	0.6Uos嘉泰姆	12Uos嘉泰姆	5000Uos嘉泰姆
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CXSD6283Uos嘉泰姆	SOP-14Uos嘉泰姆	VMUos嘉泰姆	1Uos嘉泰姆	1Uos嘉泰姆	25Uos嘉泰姆	2.2Uos嘉泰姆	13.2Uos嘉泰姆	0.8Uos嘉泰姆	12Uos嘉泰姆	5000Uos嘉泰姆
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CXSD6285Uos嘉泰姆	TSSOP-24PUos嘉泰姆	VMUos嘉泰姆	1Uos嘉泰姆	2Uos嘉泰姆	20Uos嘉泰姆	2.97Uos嘉泰姆	5.5Uos嘉泰姆	0.8Uos嘉泰姆	5~12Uos嘉泰姆	5000Uos嘉泰姆
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CXSD6287Uos嘉泰姆	SOP-8-P\|DIP-8Uos嘉泰姆	VMUos嘉泰姆	1Uos嘉泰姆	1Uos嘉泰姆

上一篇：多种电源电压的单相恒导通同步单PWM控制器CXSD62101|L驱动N通道mosfet

下一篇：CXSD62102A单相定时同步的PWM控制器驱动N通道mosfet功率因数调制（PFM）或脉宽调制（PWM）模式下都能瞬态响应和准确的直流电压输出

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