CX4HN60 N-Channel Superjunction MOSFET, CX10HN60 N-Channel Superjunction MOSFET,NeoFET基于先进的深槽填充工艺,是新一代高压超结MOSFET产品,通过利用先进的制造技术以及精确的工艺控制,NeoFET产品具有优越的开关特性和可靠性
摘要:CX4HN60 N-Channel Superjunction MOSFET, CX10HN60 N-Channel Superjunction MOSFET,NeoFET基于先进的深槽填充工艺,是新一代高压超结MOSFET产品,通过利用先进的制造技术以及精确的工艺控制,NeoFET产品具有优越的开关特性和可靠性
目录
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| N沟道超结MOS | ||||||||
| Product | Character | Darin to Source Voltage | Continuous Drain Current | Drain Current Pulsed | Gate to Source Voltage | RDS(ON) Typ.(Ω) | Single Pulsed Avalanche Energy | Package |
| CX4HN60 | N-Channel Superjunction MOSFET | 0~600V | 0~4.5A | 0~13A | ±30V | 0.85 | 130mJ | TO251/252 |
| CX10HN60 | N-Channel Superjunction MOSFET | 0~600V | 0~10A | 0~30A | ±30V | 0.34 | 200mJ | TO220/220FP |
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