Trench Technology Supper high den The JTMD2084 is Dual P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

发布时间:2020-04-06 09:43:38 浏览次数:702 作者:嘉泰姆
摘要:Trench Technology Supper high den The JTMD2084 is Dual P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

                          目录Bf6嘉泰姆

   1.产品概述      2.产品特点      3.应用范围     4.技术规格书下载(PDF文档)</span>Bf6嘉泰姆

   5.产品封装      6.电路原理图</strong>     7.相关产品Bf6嘉泰姆

一.产品概述Bf6嘉泰姆


     The JTMD2084 is Dual P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product JTMD2084 is Pb-free.  Bf6嘉泰姆

二.产品特点Bf6嘉泰姆


  Trench TechnologyBf6嘉泰姆

  Supper high density cell designBf6嘉泰姆

  Excellent ON resistanceBf6嘉泰姆

  Extremely Low Threshold VoltageBf6嘉泰姆

  Small package DFN2X2-6LBf6嘉泰姆

三.应用范围Bf6嘉泰姆


  DC/DC convertersBf6嘉泰姆

  Power supply converters circuitBf6嘉泰姆

  Load/Power Switching for portable device   Bf6嘉泰姆

四.技术规格书(产品PDF)Bf6嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持</span>!</span>Bf6嘉泰姆

 QQ截图20160419174301.jpgBf6嘉泰姆

五.产品封装图</span>Bf6嘉泰姆


  blob.pngBf6嘉泰姆

六.电路原理图</strong>Bf6嘉泰姆


   blob.pngBf6嘉泰姆

七.相关芯片选择指南Bf6嘉泰姆


场效应晶体管

ProdBf6嘉泰姆

uctBf6嘉泰姆

ConfigBf6嘉泰姆

urationBf6嘉泰姆

ChaBf6嘉泰姆

nnelBf6嘉泰姆

Drain-SourceGate-Source

Gate ThrBf6嘉泰姆

esholdBf6嘉泰姆

DrainBf6嘉泰姆

-to-SourceBf6嘉泰姆

DrainBf6嘉泰姆

-toBf6嘉泰姆

-SourceBf6嘉泰姆

Input CapaBf6嘉泰姆

citanceBf6嘉泰姆

ContiBf6嘉泰姆

nuousBf6嘉泰姆

Power DissipationBody DiodeBody Diode

PacBf6嘉泰姆

kageBf6嘉泰姆

VolBf6嘉泰姆

tageBf6嘉泰姆

VolBf6嘉泰姆

tageBf6嘉泰姆

VolBf6嘉泰姆

tageBf6嘉泰姆

On-Resistance

On-ResiBf6嘉泰姆

stanceBf6嘉泰姆

CISSDrain CurrentPD(@TA = 25°C)

Forward VoBf6嘉泰姆

ltageBf6嘉泰姆

Forward VoBf6嘉泰姆

ltageBf6嘉泰姆

VDSVGSVGS(th)RDS(ON)@(VGS = 4.5V)RDS(ON)@(VGS = 4.5V)(pF) (Typ.)ID (@TA = 25°C)(W) (Max.)VSDVSD
(V) (Max.)(V) (Max.)(V) (Max.)(Ω) (Typ.)(Ω) (Max.)
(A) (Max.)
(V) (Typ.)(V) (Max.)
JTPM9435AP-Channel MOSFET1-30±20-30.0430.0661120-5.41.9-0.8-1.5SOP-8L
JTPMD2084P-Channel MOSFET2-20±10-10.080.12444-3.32-0.8-1.5DFN2020-6L
JTPM6207P-Channel MOSFET1-20±12-10.0250.032260-5.71.2--1.2SOT-23-3
JTNM01N11N-Channel MOSFET1110±202.50.250.353001.81.780.81.2SOT-23-6L
JTNMD2078N-Channel MOSFET220±1210.420.6300.560.410.851.5SOT-363
JTCR650N60TGN-Channel MOSFET1600±304.50.550.654037.362.5
1.5TO-252E-2
JTCR650N60TFN-Channel MOSFET1600±304.50.550.654037.327.7
1.5TO-220F
JTCR470N60TFN-Channel MOSFET1600±304.50.420.475479.429.8
1.5TO-220F
JTCR380N60TGN-Channel MOSFET1600±304.50.360.3865610.683
1.5TO-252E-2
JTCR380N60TFN-Channel MOSFET1600±304.50.360.3865610.631.2
1.5TO-220F
JTNMD2178N-Channel MOSFET220±1210.0120.01612406--1.5DFN2020-4L
JTNM01N10N-Channel MOSFET1100±202.50.2550.353501.71.60.81.2SOT-23
JTPMD2076N-Channel MOSFET2-20±12-10.0710.09471-4.621.92-0. 76-1.2SOP-8L
JTNMD2180N-Channel MOSFET220±1010.00950.0141188111.70.751.5PDFN3×3-8L
JTNM2077N-Channel MOSFET120±1010.420.6300.540.360.851.5SOT-723
JTNM3019N-Channel MOSFET130±201.51.34360.250.370.81.5SOT-523
JTPM2049BP-Channel MOSFET1-20±5-0.850.440.774.5-0.510.31-0.65-1.1DFN1006-3L
JTPM2049P-Channel MOSFET1-20±5-0.85-0.8574.5-0.510.31--1.5DFN1006-3L
JTNM07N65FN-Channel MOSFET1650±30511.29307340.741.5TO-220F
JTNM2072N-Channel MOSFET120±50.850.220.4250.60.660.270.71.1DFN1006-3L
JTNM2046BN-Channel MOSFET120±50.850.220.4250.60.710.320.71.1DFN1006-3L
JTCM2068N + P channel MOSFET220/-20±81/-10.033/0.0850.046/0.116345/5314.4/-2.80.720.7/-0.81.5/-1.5SOT-23-6L
JTNM12N65N-Channel MOSFET1650±3050.570.71670121920.71.5TO-220
JTNM07N60N-Channel MOSFET1600±30511.293071560.741.5TO-220
JTNM6002N-Channel MOSFET160±2021.72.623.370.30.370.91.5SOT-323
JTPM3005P-Channel MOSFET1-30±20-2.50.0830.09670-4.11.4-0.78-1.5SOT-23-3L
JTNM3017N-Channel MOSFET130±201.50.0210.0338346.21.40.851.5DFN2X2-6L
JTNMD2176N-Channel MOSFET220±1010.0550.091902.60.9-1.5SOT-23-6L
JTCM2007N + P channel MOSFET220/-20±60.9/-0.90.18/0.450.31/0.8190/65.80.79/-0.50.290.74/-0.81.5/-1.5SOT-563
JTCM2002N + P channel MOSFET220/-20±60.9/-0.90.23/0.520.31/0.8150/74.50.8/-0.590.31/0.290.7/-0.651.5/-1.5SOT-363
JTCM2001N + P channel MOSFET220/-20±6/±80.85/-1.00.18/0.0850.31/0.1250/4700.65/-3.11.50.5/-0.50.7/-0.7DFN2 x 2-6L
JTPMD3002P-Channel MOSFET2-30±20-2.50.070.09670-3.81.1-0.78-1.5SOP-8L
JTPMD2013P-Channel MOSFET2-20±6-0.90.550.8174.5-0.560.29-0.65-1.5SOT-563
JTPMD2010P-Channel MOSFET2-20±12-10.0750.12470-3.11.5-0.85-1.5DFN 6
JTPM9435P-Channel MOSFET1-30±20-30.0530.066710-5.52-0.79-1.5SOP-8P
JTPM5001P-Channel MOSFET1-50±20-23.51066.7-0.20.4-0.9-1.5SOT-23
JTPM4803P-Channel MOSFET2-30±20-30.0530.066680-5.52-0.79-1.5SOP-8P
JTPM4801P-Channel MOSFET2-30±12-1.40.0450.06560-5.62-0.75-1.5SOP-8P
JTPM3407P-Channel MOSFET1-30±20-30.0530.066950-3.71-0.79-1.5SOT-23-3
JTPM3401P-Channel MOSFET1-30±12-1.50.0430.0561250-4.61.3-0.75-1.5SOT-23-3L
JTPM3012P-Channel MOSFET1-30±20-2.50.080.095654-2.90.8-0.8-1.5SOT-23
JTPM3004P-Channel MOSFET1-30±20-2.50.0790.09670-3.81.2-0.78-1.5SOP-8L
JTPM2341AP-Channel MOSFET1-20±12-10.0520.061700-3.50.75-0.8-SOT23-3
JTPM2341P-Channel MOSFET1-20±8-10.0520.061700-3.50.75-0.8-SOT23-3
JTPM2065P-Channel MOSFET1-20±8-10.0170.0242026-6.21.4-0.8-1.5DFN 2X2-6L
JTPM2048P-Channel MOSFET1-20±12-10.0960.135331-2.20.7-0.79-1.5SOT-23
JTPM2031P-Channel MOSFET1-20±5-0.810.4950.85374.5-0.60.36-0.75-1.5SOT-723
JTPM2026P-Channel MOSFET1-20±12-10.0560.0651130-2.90.8-0.62-1.5SOT-23
JTPM2019P-Channel MOSFET1-20±5-0.90.480.8174.5-0.620.28-0.65-1.5SOT-523
JTPM2015P-Channel MOSFET1-20±8-0.810.0810.11534-2.20.8-0.74-1.5SOT-23
JTPM2014P-Channel MOSFET1-20±8-0.90.050.061200-4.11.4-0.74-1.5DFN2 x 2-6L
JTPM2006P-Channel MOSFET + Schottky Diode1-20±8-10.090.12480-31.45-0.07-1.5DFN2x2-6L
JTPM2005BP-Channel MOSFET + Schottky Diode1-20±8-0.81-0.12300-2.71.1--1.5DFN3X2-8L
JTPM2005P-Channel MOSFET + Schottky Diode1-20±8-0.81-0.12700-2.91.4--1.5DFN3X2-8L
JTPM1488P-Channel MOSFET1-12±8-0.850.080.12607-1.50.44-0.8-1.5SOT-323
JTPM1485P-Channel MOSFET1-12±8-0.950.0150.0192620-7.41.8-0.88-1.5DFN2X2-6L
JTPM1483P-Channel MOSFET1-12±8-0.850.0310.0371152-3.50.74-0.8-1.5SOT-23
JTPM1481P-Channel MOSFET1-12±12-0.90.0220.0261880-5.11.9-0.76-1.5DFN2X2-6L
JTPM1480P-Channel MOSFET1-20±8-10.110.255480-1.40.29-0.79-1.5SOT-323
JTNMD6003N-Channel MOSFET260±2021.72.623.370.30.370.91.5SOT-563
JTNMD3014N-Channel MOSFET230±202.20.0330.0415806.81.90.951.5SOP-8L
JTNMD2179N-Channel MOSFET220±1010.01750.0218006.31.10.751.5TSOT-23-6L
JTNMD2174N-Channel MOSFET212±101.20.0190.02513136-0.91.5CSP 4L
JTNMD2173N-Channel MOSFET220±1210.0260.03112406--1.5CSP 4L
JTNMD2172N-Channel MOSFET220±1010.0150.02137171.40.651.5TSSOP-8L
JTNMD2171N-Channel MOSFET220±1210.0360.04512106--1.5CSP 4L
JTNMD2168N-Channel MOSFET220±1010.0220.0286805.11.10.781.5TSSOP-8
JTNMD2166N-Channel MOSFET220±1010.0220.02768051.10.781.5SOT-23-6L
JTNMD2165N-Channel MOSFET260±2021.72.623.370.320.410.91.5SOT-363
JTNMD2162N-Channel MOSFET220±1010.0160.02213714.81.70.651.5PDFN2.9X2.8-8L
JTNMD2160N-Channel Mosfet220±1010.01570.0218006.31.10.651.5SOT-23-6L
JTNMD2158N-Channel MOSFET220±1010.01480.01980071.40.651.5TSSOP-8L
JTNMD2154N-Channel MOSFET220±60.850.220.31600.880.370.71.5SOT-563
JTNMD2153N-Channel Mosfet220±60.850.220.31500.890.380.71.5SOT-363
JTNM6001N-Channel MOSFET160±2021.72.623.370.50.690.91.5SOT-23
JTNM4153N-Channel MOSFET120±610.220.31680.880.370.71.5SOT-523
JTNM4006N-Channel MOSFET145±201.50.1420.183151.70.80.81.5SOT-23
JTNM4002N-Channel MOSFET120±611.652720.60.25--SOT-523
JTNM4001N-Channel MOSFET120±610.410.7670.80.25--SOT-523
JTNM3013N-Channel MOSFET130±201.51.34360.270.440.81.5SOT-723
JTNM3011N-Channel MOSFET130±2030.0390.0595705.71.50.841.5SOT-23-6L
JTNM3008N-Channel MOSFET130±2020.0570.0772653.10.80.81.5SOT-23
JTNM3003N-Channel MOSFET130±2030.0430.05957040.80.841.5SOT-23
JTNM2046N-Channel MOSFET120±50.850.220.4250.60.710.320.71.1DFN1006-3L
JTNM2030N-Channel MOSFET120±610.210.31500.950.430.71.5SOT-723
JTNM2024N-Channel MOSFET120±810.0270.03610253.90.80.61.5SOT-23
JTNM2021N-Channel MOSFET120±60.850.220.31500.890.370.71.5SOT-323
JTNM2020N-Channel MOSFET120±60.850.220.31500.90.380.71.5SOT-23
JTNM2016N-Channel MOSFET120±810.040.0475003.20.80.621.5SOT-23
JTNM12N65FN-Channel MOSFET1650±3050.570.7167012390.71.5TO-220F
JTNM07N65N-Channel MOSFET1650±3051.051.0593071560.741.5TO-220
JTNM07N60FN-Channel MOSFET1600±30511.29307340.741.5TO-220F


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