Dual N-Channel, 20V, 6A, Power MOSFET The JTMD2178 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the M

发布时间:2020-04-06 09:43:38 浏览次数:702 作者:嘉泰姆
摘要:Dual N-Channel, 20V, 6A, Power MOSFET The JTMD2178 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the M

                          目录hVC嘉泰姆

   1.产品概述      2.产品特点      3.应用范围     4.技术规格书下载(PDF文档)</span>hVC嘉泰姆

   5.产品封装      6.电路原理图</strong>     7.相关产品hVC嘉泰姆

一.产品概述hVC嘉泰姆


      The JTMD2178 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge. This device is designed for Lithium-Ion battery protection circuit. The JTMD2178 is available in DFN2X2-4L package. Standard Product JTMD2178 is Pb-free and Halogen-free.hVC嘉泰姆

二.产品特点hVC嘉泰姆


  Trench TechnologyhVC嘉泰姆

  Supper high density cell designhVC嘉泰姆

  Excellent ON resistance for higher DC currenthVC嘉泰姆

  Extremely Low Threshold VoltagehVC嘉泰姆

  Small package DFN2X2-4LhVC嘉泰姆

三.应用范围hVC嘉泰姆


  Lithium-Ion battery protection circuit   hVC嘉泰姆

四.技术规格书(产品PDF)hVC嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持</span>!</span>hVC嘉泰姆

 QQ截图20160419174301.jpghVC嘉泰姆

五.产品封装图</span>hVC嘉泰姆


  blob.pnghVC嘉泰姆

六.电路原理图</strong>hVC嘉泰姆


   blob.pnghVC嘉泰姆

七.相关芯片选择指南hVC嘉泰姆


场效应晶体管

ProhVC嘉泰姆

ducthVC嘉泰姆

ConfighVC嘉泰姆

urationhVC嘉泰姆

ChahVC嘉泰姆

nnelhVC嘉泰姆

Drain-SourceGate-SourceGate ThresholdDrain-to-SourceDrain-to-Source

Input CapahVC嘉泰姆

citancehVC嘉泰姆

ConhVC嘉泰姆

tinuoushVC嘉泰姆

Power DisshVC嘉泰姆

ipationhVC嘉泰姆

Body DiodeBody Diode

PahVC嘉泰姆

ckagehVC嘉泰姆

VolhVC嘉泰姆

tagehVC嘉泰姆

VohVC嘉泰姆

ltagehVC嘉泰姆

VohVC嘉泰姆

ltagehVC嘉泰姆

On-ResishVC嘉泰姆

tancehVC嘉泰姆

On-ResishVC嘉泰姆

tancehVC嘉泰姆

CISSDrain CurrentPD(@TA = 25°C)Forward Voltage

Forward VohVC嘉泰姆

ltagehVC嘉泰姆

VDSVGSVGS(th)RDS(ON)@(VGS = 4.5V)RDS(ON)@(VGS = 4.5V)(pF) (Typ.)ID (@TA = 25°C)(W) (Max.)VSDVSD
(V) (Max.)(V) (Max.)(V) (Max.)(Ω) (Typ.)(Ω) (Max.)
(A) (Max.)
(V) (Typ.)(V) (Max.)
JTPM9435AP-Channel MOSFET1-30±20-30.0430.0661120-5.41.9-0.8-1.5SOP-8L
JTPMD2084P-Channel MOSFET2-20±10-10.080.12444-3.32-0.8-1.5DFN2020-6L
JTPM6207P-Channel MOSFET1-20±12-10.0250.032260-5.71.2--1.2SOT-23-3
JTNM01N11N-Channel MOSFET1110±202.50.250.353001.81.780.81.2SOT-23-6L
JTMD2078N-Channel MOSFET220±1210.420.6300.560.410.851.5SOT-363
JTCR650N60TGN-Channel MOSFET1600±304.50.550.654037.362.5
1.5TO-252E-2
JTCR650N60TFN-Channel MOSFET1600±304.50.550.654037.327.7
1.5TO-220F
JTCR470N60TFN-Channel MOSFET1600±304.50.420.475479.429.8
1.5TO-220F
JTCR380N60TGN-Channel MOSFET1600±304.50.360.3865610.683
1.5TO-252E-2
JTCR380N60TFN-Channel MOSFET1600±304.50.360.3865610.631.2
1.5TO-220F
JTNMD2178N-Channel MOSFET220±1210.0120.01612406--1.5DFN2020-4L
JTNM01N10N-Channel MOSFET1100±202.50.2550.353501.71.60.81.2SOT-23
JTMD2076N-Channel MOSFET2-20±12-10.0710.09471-4.621.92-0. 76-1.2SOP-8L
JTMD2180N-Channel MOSFET220±1010.00950.0141188111.70.751.5PDFN3×3-8L
JTNM2077N-Channel MOSFET120±1010.420.6300.540.360.851.5SOT-723
JTNM3019N-Channel MOSFET130±201.51.34360.250.370.81.5SOT-523
JTPM2049BP-Channel MOSFET1-20±5-0.850.440.774.5-0.510.31-0.65-1.1DFN1006-3L
JTPM2049P-Channel MOSFET1-20±5-0.85-0.8574.5-0.510.31--1.5DFN1006-3L
JTNM07N65FN-Channel MOSFET1650±30511.29307340.741.5TO-220F
JTNM2072N-Channel MOSFET120±50.850.220.4250.60.660.270.71.1DFN1006-3L
JTNM2046BN-Channel MOSFET120±50.850.220.4250.60.710.320.71.1DFN1006-3L
JTCM2068N + P channel MOSFET220/-20±81/-10.033/0.0850.046/0.116345/5314.4/-2.80.720.7/-0.81.5/-1.5SOT-23-6L
JTNM12N65N-Channel MOSFET1650±3050.570.71670121920.71.5TO-220
JTNM07N60N-Channel MOSFET1600±30511.293071560.741.5TO-220
JTNM6002N-Channel MOSFET160±2021.72.623.370.30.370.91.5SOT-323
JTPM3005P-Channel MOSFET1-30±20-2.50.0830.09670-4.11.4-0.78-1.5SOT-23-3L
JTNM3017N-Channel MOSFET130±201.50.0210.0338346.21.40.851.5DFN2X2-6L
JTMD2176N-Channel MOSFET220±1010.0550.091902.60.9-1.5SOT-23-6L
JTCM2007N + P channel MOSFET220/-20±60.9/-0.90.18/0.450.31/0.8190/65.80.79/-0.50.290.74/-0.81.5/-1.5SOT-563
JTCM2002N + P channel MOSFET220/-20±60.9/-0.90.23/0.520.31/0.8150/74.50.8/-0.590.31/0.290.7/-0.651.5/-1.5SOT-363
JTCM2001N + P channel MOSFET220/-20±6/±80.85/-1.00.18/0.0850.31/0.1250/4700.65/-3.11.50.5/-0.50.7/-0.7DFN2 x 2-6L
JTMD3002P-Channel MOSFET2-30±20-2.50.070.09670-3.81.1-0.78-1.5SOP-8L
JTMD2013P-Channel MOSFET2-20±6-0.90.550.8174.5-0.560.29-0.65-1.5SOT-563
JTMD2010P-Channel MOSFET2-20±12-10.0750.12470-3.11.5-0.85-1.5DFN 6
JTPM9435P-Channel MOSFET1-30±20-30.0530.066710-5.52-0.79-1.5SOP-8P
JTPM5001P-Channel MOSFET1-50±20-23.51066.7-0.20.4-0.9-1.5SOT-23
JTPM4803P-Channel MOSFET2-30±20-30.0530.066680-5.52-0.79-1.5SOP-8P
JTPM4801P-Channel MOSFET2-30±12-1.40.0450.06560-5.62-0.75-1.5SOP-8P
JTPM3407P-Channel MOSFET1-30±20-30.0530.066950-3.71-0.79-1.5SOT-23-3
JTPM3401P-Channel MOSFET1-30±12-1.50.0430.0561250-4.61.3-0.75-1.5SOT-23-3L
JTPM3012P-Channel MOSFET1-30±20-2.50.080.095654-2.90.8-0.8-1.5SOT-23
JTPM3004P-Channel MOSFET1-30±20-2.50.0790.09670-3.81.2-0.78-1.5SOP-8L
JTPM2341AP-Channel MOSFET1-20±12-10.0520.061700-3.50.75-0.8-SOT23-3
JTPM2341P-Channel MOSFET1-20±8-10.0520.061700-3.50.75-0.8-SOT23-3
JTPM2065P-Channel MOSFET1-20±8-10.0170.0242026-6.21.4-0.8-1.5DFN 2X2-6L
JTPM2048P-Channel MOSFET1-20±12-10.0960.135331-2.20.7-0.79-1.5SOT-23
JTPM2031P-Channel MOSFET1-20±5-0.810.4950.85374.5-0.60.36-0.75-1.5SOT-723
JTPM2026P-Channel MOSFET1-20±12-10.0560.0651130-2.90.8-0.62-1.5SOT-23
JTPM2019P-Channel MOSFET1-20±5-0.90.480.8174.5-0.620.28-0.65-1.5SOT-523
JTPM2015P-Channel MOSFET1-20±8-0.810.0810.11534-2.20.8-0.74-1.5SOT-23
JTPM2014P-Channel MOSFET1-20±8-0.90.050.061200-4.11.4-0.74-1.5DFN2 x 2-6L
JTPM2006P-Channel MOSFET + Schottky Diode1-20±8-10.090.12480-31.45-0.07-1.5DFN2x2-6L
JTPM2005BP-Channel MOSFET + Schottky Diode1-20±8-0.81-0.12300-2.71.1--1.5DFN3X2-8L
JTPM2005P-Channel MOSFET + Schottky Diode1-20±8-0.81-0.12700-2.91.4--1.5DFN3X2-8L
JTPM1488P-Channel MOSFET1-12±8-0.850.080.12607-1.50.44-0.8-1.5SOT-323
JTPM1485P-Channel MOSFET1-12±8-0.950.0150.0192620-7.41.8-0.88-1.5DFN2X2-6L
JTPM1483P-Channel MOSFET1-12±8-0.850.0310.0371152-3.50.74-0.8-1.5SOT-23
JTPM1481P-Channel MOSFET1-12±12-0.90.0220.0261880-5.11.9-0.76-1.5DFN2X2-6L
JTPM1480P-Channel MOSFET1-20±8-10.110.255480-1.40.29-0.79-1.5SOT-323
JTMD6003N-Channel MOSFET260±2021.72.623.370.30.370.91.5SOT-563
JTMD3014N-Channel MOSFET230±202.20.0330.0415806.81.90.951.5SOP-8L
JTMD2179N-Channel MOSFET220±1010.01750.0218006.31.10.751.5TSOT-23-6L
JTNMD2174N-Channel MOSFET212±101.20.0190.02513136-0.91.5CSP 4L
JTNMD2173N-Channel MOSFET220±1210.0260.03112406--1.5CSP 4L
JTMD2172N-Channel MOSFET220±1010.0150.02137171.40.651.5TSSOP-8L
JTMD2171N-Channel MOSFET220±1210.0360.04512106--1.5CSP 4L
JTMD2168N-Channel MOSFET220±1010.0220.0286805.11.10.781.5TSSOP-8
JTMD2166N-Channel MOSFET220±1010.0220.02768051.10.781.5SOT-23-6L
JTMD2165N-Channel MOSFET260±2021.72.623.370.320.410.91.5SOT-363
JTMD2162N-Channel MOSFET220±1010.0160.02213714.81.70.651.5PDFN2.9X2.8-8L
JTMD2160N-Channel Mosfet220±1010.01570.0218006.31.10.651.5SOT-23-6L
JTMD2158N-Channel MOSFET220±1010.01480.01980071.40.651.5TSSOP-8L
JTMD2154N-Channel MOSFET220±60.850.220.31600.880.370.71.5SOT-563
JTMD2153N-Channel Mosfet220±60.850.220.31500.890.380.71.5SOT-363
JTNM6001N-Channel MOSFET160±2021.72.623.370.50.690.91.5SOT-23
JTNM4153N-Channel MOSFET120±610.220.31680.880.370.71.5SOT-523
JTNM4006N-Channel MOSFET145±201.50.1420.183151.70.80.81.5SOT-23
JTNM4002N-Channel MOSFET120±611.652720.60.25--SOT-523
JTNM4001N-Channel MOSFET120±610.410.7670.80.25--SOT-523
JTNM3013N-Channel MOSFET130±201.51.34360.270.440.81.5SOT-723
JTNM3011N-Channel MOSFET130±2030.0390.0595705.71.50.841.5SOT-23-6L
JTNM3008N-Channel MOSFET130±2020.0570.0772653.10.80.81.5SOT-23
JTNM3003N-Channel MOSFET130±2030.0430.05957040.80.841.5SOT-23
JTNM2046N-Channel MOSFET120±50.850.220.4250.60.710.320.71.1DFN1006-3L
JTNM2030N-Channel MOSFET120±610.210.31500.950.430.71.5SOT-723
JTNM2024N-Channel MOSFET120±810.0270.03610253.90.80.61.5SOT-23
JTNM2021N-Channel MOSFET120±60.850.220.31500.890.370.71.5SOT-323
JTNM2020N-Channel MOSFET120±60.850.220.31500.90.380.71.5SOT-23
JTNM2016N-Channel MOSFET120±810.040.0475003.20.80.621.5SOT-23
JTNM12N65FN-Channel MOSFET1650±3050.570.7167012390.71.5TO-220F
JTNM07N65N-Channel MOSFET1650±3051.051.0593071560.741.5TO-220
JTNM07N60FN-Channel MOSFET1600±30511.29307340.741.5TO-220F


hVC嘉泰姆

文章标签

暂无标签

发表评论

共有条评论
用户名: 密码:
验证码: 匿名发表