CXMS5209 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored

发布时间:2020-04-06 09:43:38 浏览次数:700 作者:嘉泰姆
摘要:CXMS5209 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored

                          目录R66嘉泰姆

   1.产品概述      2.产品特点      3.应用范围     4.技术规格书下载(PDF文档)</span>R66嘉泰姆

   5.产品封装      6.电路原理图</strong>     7.相关产品R66嘉泰姆

一.产品概述R66嘉泰姆


  CXMS5209 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, LCD-TV , LCD- Monitor and other battery powered circuits
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二.产品特点R66嘉泰姆


 z -30V/-5.0A, RDS(ON) = 65mΩ @VGS =-10VR66嘉泰姆

 z -30V/-4.4A, RDS(ON) = 85mΩ @VGS = -6.0VR66嘉泰姆

 z -30V/-3.8A, RDS(ON) = 95mΩ @VGS = -4.5VR66嘉泰姆

 z Super high density cell design for extremely low RDS(ON)R66嘉泰姆

 z Exceptional on-resistance and maximum DC current capabilityR66嘉泰姆

 z SOP-8 package designR66嘉泰姆

三.应用范围R66嘉泰姆


    R66嘉泰姆

四.技术规格书(产品PDF)R66嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持</span>!</span>R66嘉泰姆

 QQ截图20160419174301.jpgR66嘉泰姆

五.产品封装图</span>R66嘉泰姆


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六.电路原理图</strong>R66嘉泰姆


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七.相关芯片选择指南     更多的同类产品......R66嘉泰姆


MOSFET
型号说明
CXMS520730V/4A PMOS
CXMS5208A5A PMOS
CXMS52095A/30V 双PMOS
CXMS52043.5A/ 20V PMOS
CXMS52054A/ 30V PMOS
CXMS52012A P MOS

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