CXMS5203 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to min

                          目录oJt嘉泰姆

   1.产品概述      2.产品特点      3.应用范围     4.技术规格书下载（PDF文档）</span>oJt嘉泰姆

   5.产品封装      6.电路原理图</strong>     7.相关产品oJt嘉泰姆

一.产品概述oJt嘉泰姆

    The CXMS5203 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. oJt嘉泰姆

二.产品特点oJt嘉泰姆

 z 20V/6.0A, RDS(ON) = 27mΩ (Typ.) @VGS = 10VoJt嘉泰姆

 z 20V/5.0A, RDS(ON) = 30mΩ @VGS = 4.5VoJt嘉泰姆

 z 20V/4.5A, RDS(ON) = 34mΩ @VGS = 2.5VoJt嘉泰姆

 z 20V/4.0A, RDS(ON) = 40mΩ @VGS = 1.8VoJt嘉泰姆

 z Super high density cell design for extremely low RDS(ON)oJt嘉泰姆

 z Exceptional on-resistance and Maximum DC current capabilityoJt嘉泰姆

 z SOT-23-3L package designoJt嘉泰姆

三.应用范围oJt嘉泰姆

    oJt嘉泰姆

四.技术规格书（产品PDF)oJt嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持</span>！</span>oJt嘉泰姆

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五.产品封装图</span>oJt嘉泰姆

  oJt嘉泰姆

六.电路原理图</strong>oJt嘉泰姆

   oJt嘉泰姆

七.相关芯片选择指南     更多的同类产品......oJt嘉泰姆