中文
EnglishN-Channel MOSFET CXMS5221SG Dual N-channel enhancement mode field-effect transistor produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance
l 20V/5A， RDS(ON) =29mΩ@ VGS=3.85V,ID=5A
l High Density Cell Design For Ultra Low On-Resistance
l surface mount package：SOP8
l Battery management
l power management
l Portable equipment
l Low power DC to DC converter.
l Load switch
l LCD adapter
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MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管) | |||||||
Part | Mode | VDS(Max) | VGS | ID(Max) | RDS(on) | Application | Package |
N channel | 20V | 12V | 5.2A | 37mΩ | ①②③④⑤⑥⑦⑧ | SOT23 | |
N channel | 20V | 8V | 3A | 22mΩ | ①②③④⑤⑥⑦⑧ | SOT23/SOT23-3 | |
N channel | 20V | 12V | 5.2A | 29mΩ | ①②③④⑤⑥⑦⑧ | SOT23 | |
Double N | 20V | 12V | 6A | 22mΩ | ①②③④⑤⑥⑦⑧ | SOP8 | |
N channel | 30V | 12V | 5.8A | 25mΩ | ①②③④⑤⑥⑦⑧ | SOT23/SOT23-3 | |
N channel | 30V | 20V | 4.4A | 35mΩ | ①②③④⑤⑥⑦⑧ | SOT23 | |
Double N | 20V | 12V | 6A | 21mΩ | ①②③④⑤</span> | SOT23-6/ TSSOP8 | |
Double N | 20V | 12V | 5A | 19mΩ | ①②③④⑤⑥⑦⑧ | TSSOP8/SOT26 | |
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protection | |||||||
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