中文
EnglishCXMS5223 Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device p
CXMS5223 Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation
20V/6A
RDS(ON) =20mΩ@ VGS=4.5V,ID=4.5A
RDS(ON) =21mΩ@ VGS=3.85V,ID=3.5A
RDS(ON) =26mΩ@ VGS=2.5V,ID=3A
High Density Cell Design For Ultra Low On-Resistance
Surface mount package:SOT23-6L
Battery management
Power management
Portable equipment
Low power DC to DC converter.
Load switch
LCD adapter
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MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管) | |||||||
Part | Mode | VDS(Max) | VGS | ID(Max) | RDS(on) | Application | Package |
N channel | 20V | 12V | 5.2A | 37mΩ | ①②③④⑤⑥⑦⑧ | SOT23 | |
N channel | 20V | 8V | 3A | 22mΩ | ①②③④⑤⑥⑦⑧ | SOT23/SOT23-3 | |
N channel | 20V | 12V | 5.2A | 29mΩ | ①②③④⑤⑥⑦⑧ | SOT23 | |
Double N | 20V | 12V | 6A | 22mΩ | ①②③④⑤⑥⑦⑧ | SOP8 | |
N channel | 30V | 12V | 5.8A | 25mΩ | ①②③④⑤⑥⑦⑧ | SOT23/SOT23-3 | |
N channel | 30V | 20V | 4.4A | 35mΩ | ①②③④⑤⑥⑦⑧ | SOT23 | |
Double N | 20V | 12V | 6A | 21mΩ | ①②③④⑤</span> | SOT23-6/ TSSOP8 | |
Double N | 20V | 12V | 5A | 19mΩ | ①②③④⑤⑥⑦⑧ | TSSOP8/SOT26 | |
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protection | |||||||
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