N- and P-Channel Complementary, 20V, MOSFET CXMS5105 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications

发布时间:2020-04-06 09:43:38 浏览次数:701 作者:嘉泰姆
摘要:N- and P-Channel Complementary, 20V, MOSFET CXMS5105 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications

目录

   产品概述 返回TOPNjV嘉泰姆


The CXMS5105 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Standard Product CXMS5105 is Pb-free.

   产品特点 返回TOPNjV嘉泰姆


z Trench Technology NjV嘉泰姆

z Supper high density cell design for extremely low Rds(on) NjV嘉泰姆

z Exceptional ON resistance and maximum DC current capability NjV嘉泰姆

z Small package design with DFN2x2-6L.NjV嘉泰姆

   应用范围 返回TOPNjV嘉泰姆


z Driver: Relays, Solenoids, Lamps, Hammers NjV嘉泰姆

z Power supply converters circuit NjV嘉泰姆

z Load/Power Switching for potable deviceNjV嘉泰姆

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ProductNjV嘉泰姆

PolarityChannelVDSVGSVGS(th)RDS(ON)@VGS=4.5VID@TA=25oCPackageSize
(Max.)(Max.)(Max.)(Typ.)(MAX.)(L×W)
(V)(V)(V)(Ω)(A)(mm)
CXMS5105N + P220/-20±6/±80.85/-1.00.18/0.0850.65/-3.1DFN2020-6L2.0 x 2.0
CXMS5106N + P220/-20±60.9/-0.90.23/0.520.8/-0.59SOT-3632.1 x 2.3
CXMS5107N + P220/-20±60.9/-0.90.18/0.450.79/-0.5SOT-5631.6 x 1.6
CXMS5108N + P220/-20±81/-10.033/0.0854.4/-2.8SOT-23-6L2.9 x 2.8
CXMS5109N + P212/-12±81.2/-1.20.028/-0.0575.1/-4.0DFN2020-6L2.0 x 2.0

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