N- and P-Channel Complementary, 12V,MOSFET CXMS5109 is the N-Channel and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or level shift applications,

发布时间:2020-04-06 09:43:38 浏览次数:702 作者:嘉泰姆
摘要:N- and P-Channel Complementary, 12V,MOSFET CXMS5109 is the N-Channel and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or level shift applications,

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   产品概述 返回TOPNgG嘉泰姆


The CXMS5109 is the N-Channel and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or level shift applications, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Standard Product CXMS5109 is Pb-free and Halogen-free.

   产品特点 返回TOPNgG嘉泰姆


 Trench Technology NgG嘉泰姆

 Supper high density cell design NgG嘉泰姆

 Excellent ON resistance NgG嘉泰姆

 Extremely Low Threshold Voltage NgG嘉泰姆

 Small package DFN2*2-6LNgG嘉泰姆

   应用范围 返回TOPNgG嘉泰姆


 Power supply converters circuit NgG嘉泰姆

 Load/Power Switching for portable deviceNgG嘉泰姆

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ProductNgG嘉泰姆

PolarityChannelVDSVGSVGS(th)RDS(ON)@VGS=4.5VID@TA=25oCPackageSize
(Max.)(Max.)(Max.)(Typ.)(MAX.)(L×W)
(V)(V)(V)(Ω)(A)(mm)
CXMS5105N + P220/-20±6/±80.85/-1.00.18/0.0850.65/-3.1DFN2020-6L2.0 x 2.0
CXMS5106N + P220/-20±60.9/-0.90.23/0.520.8/-0.59SOT-3632.1 x 2.3
CXMS5107N + P220/-20±60.9/-0.90.18/0.450.79/-0.5SOT-5631.6 x 1.6
CXMS5108N + P220/-20±81/-10.033/0.0854.4/-2.8SOT-23-6L2.9 x 2.8
CXMS5109N + P212/-12±81.2/-1.20.028/-0.0575.1/-4.0DFN2020-6L2.0 x 2.0

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