CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

发布时间：2020-04-06 09:43:38 浏览次数：702 作者：嘉泰姆

摘要：CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

CXMS5224FG Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.

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z 20V/6A Gw1嘉泰姆

RDS(ON) =18mΩ@ VGS=4.5V,ID=6A Gw1嘉泰姆

RDS(ON) =19mΩ@ VGS=3.85V,ID=5A Gw1嘉泰姆

z High Density Cell Design For Ultra Low On-Resistance Gw1嘉泰姆

z Surface mount package：SOP8 z ESD Protected: 3000 VGw1嘉泰姆

应用范围 返回TOPGw1嘉泰姆

z Battery management Gw1嘉泰姆

z power management Gw1嘉泰姆

z Portable equipment Gw1嘉泰姆

z Low power DC to DC converter. Gw1嘉泰姆

z Load switch z LCD adapterGw1嘉泰姆

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MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管)Gw1嘉泰姆
Part NumberGw1嘉泰姆	ModeGw1嘉泰姆	VDS(Max)Gw1嘉泰姆	VGSGw1嘉泰姆	ID(Max)Gw1嘉泰姆	RDS(on)Gw1嘉泰姆	ApplicationGw1嘉泰姆	PackageGw1嘉泰姆
Part NumberGw1嘉泰姆	ModeGw1嘉泰姆	VDS(Max)Gw1嘉泰姆	VGSGw1嘉泰姆	ID(Max)Gw1嘉泰姆	RDS(on)Gw1嘉泰姆	ApplicationGw1嘉泰姆	PackageGw1嘉泰姆
CXMS5213Gw1嘉泰姆	N channelGw1嘉泰姆	20VGw1嘉泰姆	12VGw1嘉泰姆	5.2AGw1嘉泰姆	37mΩGw1嘉泰姆	①②③④⑤⑥⑦⑧Gw1嘉泰姆	SOT23Gw1嘉泰姆
CXMS5220Gw1嘉泰姆	N channelGw1嘉泰姆	20VGw1嘉泰姆	8VGw1嘉泰姆	3AGw1嘉泰姆	22mΩGw1嘉泰姆	①②③④⑤⑥⑦⑧Gw1嘉泰姆	SOT23/SOT23-3Gw1嘉泰姆
CXMS5220-NGw1嘉泰姆	N channelGw1嘉泰姆	20VGw1嘉泰姆	12VGw1嘉泰姆	5.2AGw1嘉泰姆	29mΩGw1嘉泰姆	①②③④⑤⑥⑦⑧Gw1嘉泰姆	SOT23Gw1嘉泰姆
CXMS5221Gw1嘉泰姆	Double NGw1嘉泰姆	20VGw1嘉泰姆	12VGw1嘉泰姆	6AGw1嘉泰姆	22mΩGw1嘉泰姆	①②③④⑤⑥⑦⑧Gw1嘉泰姆	SOP8Gw1嘉泰姆
CXMS5222Gw1嘉泰姆	N channelGw1嘉泰姆	30VGw1嘉泰姆	12VGw1嘉泰姆	5.8AGw1嘉泰姆	25mΩGw1嘉泰姆	①②③④⑤⑥⑦⑧Gw1嘉泰姆	SOT23/SOT23-3Gw1嘉泰姆
CXMS5222-NGw1嘉泰姆	N channelGw1嘉泰姆	30VGw1嘉泰姆	20VGw1嘉泰姆	4.4AGw1嘉泰姆	35mΩGw1嘉泰姆	①②③④⑤⑥⑦⑧Gw1嘉泰姆	SOT23Gw1嘉泰姆
CXMS5223Gw1嘉泰姆	Double NGw1嘉泰姆	20VGw1嘉泰姆	12VGw1嘉泰姆	6AGw1嘉泰姆	21mΩGw1嘉泰姆	①②③④⑤</span>Gw1嘉泰姆	SOT23-6/ TSSOP8Gw1嘉泰姆
CXMS5224Gw1嘉泰姆	Double NGw1嘉泰姆	20VGw1嘉泰姆	12VGw1嘉泰姆	5AGw1嘉泰姆	19mΩGw1嘉泰姆	①②③④⑤⑥⑦⑧Gw1嘉泰姆	TSSOP8/SOT26Gw1嘉泰姆
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery ProtectionGw1嘉泰姆

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CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

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CXMS5224FG Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.

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CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

目录

CXMS5224FG Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.

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