CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

发布时间：2020-04-06 09:43:38 浏览次数：713 作者：嘉泰姆

摘要：CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

CXMS5224FG Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.

产品特点 返回TOPeI7嘉泰姆

z 20V/6A eI7嘉泰姆

RDS(ON) =18mΩ@ VGS=4.5V,ID=6A eI7嘉泰姆

RDS(ON) =19mΩ@ VGS=3.85V,ID=5A eI7嘉泰姆

z High Density Cell Design For Ultra Low On-Resistance eI7嘉泰姆

z Surface mount package：SOP8 z ESD Protected: 3000 VeI7嘉泰姆

应用范围 返回TOPeI7嘉泰姆

z Battery management eI7嘉泰姆

z power management eI7嘉泰姆

z Portable equipment eI7嘉泰姆

z Low power DC to DC converter. eI7嘉泰姆

z Load switch z LCD adaptereI7嘉泰姆

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eI7嘉泰姆

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产品封装图 返回TOPeI7嘉泰姆

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电路原理图 返回TOPeI7嘉泰姆

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MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管)eI7嘉泰姆
Part NumbereI7嘉泰姆	ModeeI7嘉泰姆	VDS(Max)eI7嘉泰姆	VGSeI7嘉泰姆	ID(Max)eI7嘉泰姆	RDS(on)eI7嘉泰姆	ApplicationeI7嘉泰姆	PackageeI7嘉泰姆
Part NumbereI7嘉泰姆	ModeeI7嘉泰姆	VDS(Max)eI7嘉泰姆	VGSeI7嘉泰姆	ID(Max)eI7嘉泰姆	RDS(on)eI7嘉泰姆	ApplicationeI7嘉泰姆	PackageeI7嘉泰姆
CXMS5213eI7嘉泰姆	N channeleI7嘉泰姆	20VeI7嘉泰姆	12VeI7嘉泰姆	5.2AeI7嘉泰姆	37mΩeI7嘉泰姆	①②③④⑤⑥⑦⑧eI7嘉泰姆	SOT23eI7嘉泰姆
CXMS5220eI7嘉泰姆	N channeleI7嘉泰姆	20VeI7嘉泰姆	8VeI7嘉泰姆	3AeI7嘉泰姆	22mΩeI7嘉泰姆	①②③④⑤⑥⑦⑧eI7嘉泰姆	SOT23/SOT23-3eI7嘉泰姆
CXMS5220-NeI7嘉泰姆	N channeleI7嘉泰姆	20VeI7嘉泰姆	12VeI7嘉泰姆	5.2AeI7嘉泰姆	29mΩeI7嘉泰姆	①②③④⑤⑥⑦⑧eI7嘉泰姆	SOT23eI7嘉泰姆
CXMS5221eI7嘉泰姆	Double NeI7嘉泰姆	20VeI7嘉泰姆	12VeI7嘉泰姆	6AeI7嘉泰姆	22mΩeI7嘉泰姆	①②③④⑤⑥⑦⑧eI7嘉泰姆	SOP8eI7嘉泰姆
CXMS5222eI7嘉泰姆	N channeleI7嘉泰姆	30VeI7嘉泰姆	12VeI7嘉泰姆	5.8AeI7嘉泰姆	25mΩeI7嘉泰姆	①②③④⑤⑥⑦⑧eI7嘉泰姆	SOT23/SOT23-3eI7嘉泰姆
CXMS5222-NeI7嘉泰姆	N channeleI7嘉泰姆	30VeI7嘉泰姆	20VeI7嘉泰姆	4.4AeI7嘉泰姆	35mΩeI7嘉泰姆	①②③④⑤⑥⑦⑧eI7嘉泰姆	SOT23eI7嘉泰姆
CXMS5223eI7嘉泰姆	Double NeI7嘉泰姆	20VeI7嘉泰姆	12VeI7嘉泰姆	6AeI7嘉泰姆	21mΩeI7嘉泰姆	①②③④⑤</span>eI7嘉泰姆	SOT23-6/ TSSOP8eI7嘉泰姆
CXMS5224eI7嘉泰姆	Double NeI7嘉泰姆	20VeI7嘉泰姆	12VeI7嘉泰姆	5AeI7嘉泰姆	19mΩeI7嘉泰姆	①②③④⑤⑥⑦⑧eI7嘉泰姆	TSSOP8/SOT26eI7嘉泰姆
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery ProtectioneI7嘉泰姆

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CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

目录

CXMS5224FG Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.

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CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

目录

CXMS5224FG Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.

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