30V Complementary MOSFET CXPP5450CS advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications

发布时间:2020-04-06 09:43:38 浏览次数:697 作者:嘉泰姆
摘要:30V Complementary MOSFET CXPP5450CS advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications

目录

   产品概述 返回TOPb9l嘉泰姆


The CXPP5450CS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be used in a wide variety of applications

   产品特点 返回TOPb9l嘉泰姆


 N-Channel b9l嘉泰姆

    VDS =30V, ID =6.5A b9l嘉泰姆

    RDS(ON) < 30mΩ @ VGS=10V b9l嘉泰姆

 P-Channel b9l嘉泰姆

   VDS =-30V, ID = -7A b9l嘉泰姆

   RDS(ON) < 33mΩ @ VGS=-10V b9l嘉泰姆

 High power and current handing capabilityb9l嘉泰姆

   应用范围 返回TOPb9l嘉泰姆


 H-bridge b9l嘉泰姆

 Invertersb9l嘉泰姆

   技术规格书(产品PDF) 返回TOP b9l嘉泰姆


     需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持</span>!</span>
b9l嘉泰姆

 QQ截图20160419174301.jpgb9l嘉泰姆

产品封装图&nbsp;返回TOPb9l嘉泰姆


blob.pngblob.pngb9l嘉泰姆

blob.pngb9l嘉泰姆

电路原理图&nbsp;返回TOPb9l嘉泰姆

b9l嘉泰姆


b9l嘉泰姆

blob.png

相关芯片选择指南 返回TOP                     更多同类产品.......


b9l嘉泰姆

MOSFET
PartN-ChannelP-ChannelOperatingPackage
numberVDS   (V)RDS(ON) (mΩ) VGS=10VVGS(th)(V)VDS (V)RDS(ON) (mΩ) VGS=-10VVGS(th)(V)</span>Temperature(℃)
CXPP5449CS30361.5-3069-1.6-145SOT23-6L
CXPP5450CS30201.6-3028-1.9-145SOP-8
CXPP5451CS4015.41.7-4026-1.5-145SOP-8
CXPP5452CS60372-6064-26-145SOP-8

b9l嘉泰姆

文章标签

暂无标签

发表评论

共有条评论
用户名: 密码:
验证码: 匿名发表