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<font color='FF4B0A'>The CXMS5107 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or level shift applications, uses advanced trench technology and design to provide</font>

The CXMS5107 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or level shift applications, uses advanced trench technology and design to provide

The CXMS5107 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or level shift applications, uses advanced trench technology and design to provide

2020-04-06 09:43:38

<font color='FF4B0A'>CXMS5108 is the N-Channel and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or level shift applications, uses advanced trench technology and design</font>

CXMS5108 is the N-Channel and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or level shift applications, uses advanced trench technology and design

CXMS5108 is the N-Channel and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or level shift applications, uses advanced trench technology and design

2020-04-06 09:43:38

<font color='FF4B0A'>N- and P-Channel Complementary, 12V,MOSFET CXMS5109 is the N-Channel and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or level shift applications,</font>

N- and P-Channel Complementary, 12V,MOSFET CXMS5109 is the N-Channel and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or level shift applications,

N- and P-Channel Complementary, 12V,MOSFET CXMS5109 is the N-Channel and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or level shift applications,

2020-04-06 09:43:38

<font color='FF4B0A'>600V N-Channel Super Junction MOSFET Description CX650N60T CX650N60TF CX650N60TG CX650N60TN new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism</font>

600V N-Channel Super Junction MOSFET Description CX650N60T CX650N60TF CX650N60TG CX650N60TN new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism

600V N-Channel Super Junction MOSFET Description CX650N60T CX650N60TF CX650N60TG CX650N60TN new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism

2020-04-06 09:43:38

<font color='FF4B0A'>CXMS5110 N-Channel, 20V, 3.2A, Power MOSFET ,Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion</font>

CXMS5110 N-Channel, 20V, 3.2A, Power MOSFET ,Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion

CXMS5110 N-Channel, 20V, 3.2A, Power MOSFET ,Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion

2020-04-06 09:43:38

<font color='FF4B0A'>N-Channel, 20V, 0.90A, Small Signal MOSFET CXMS5111 Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge</font>

N-Channel, 20V, 0.90A, Small Signal MOSFET CXMS5111 Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

N-Channel, 20V, 0.90A, Small Signal MOSFET CXMS5111 Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>N-Channel, 20V, 0.89A, Small Signal MOSFET The CXMS5112 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate</font>

N-Channel, 20V, 0.89A, Small Signal MOSFET The CXMS5112 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

N-Channel, 20V, 0.89A, Small Signal MOSFET The CXMS5112 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

2020-04-06 09:43:38

<font color='FF4B0A'>Single N-Channel, 20V, 3.9A, Power MOSFET CXMS5113 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge</font>

Single N-Channel, 20V, 3.9A, Power MOSFET CXMS5113 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

Single N-Channel, 20V, 3.9A, Power MOSFET CXMS5113 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>Single N-Channel, 20V, 0.95A, Power MOSFET CXMS5114 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge</font>

Single N-Channel, 20V, 0.95A, Power MOSFET CXMS5114 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

Single N-Channel, 20V, 0.95A, Power MOSFET CXMS5114 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>N-Channel, 30V, 4.0A, Power MOSFET CXMS5118 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge</font>

N-Channel, 30V, 4.0A, Power MOSFET CXMS5118 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

N-Channel, 30V, 4.0A, Power MOSFET CXMS5118 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>Single N-Channel, 30V, 3.1A, Power MOSFET CXMS5119 is N-Channel enhancement MOS Field Effect Transistor</font>

Single N-Channel, 30V, 3.1A, Power MOSFET CXMS5119 is N-Channel enhancement MOS Field Effect Transistor

Single N-Channel, 30V, 3.1A, Power MOSFET CXMS5119 is N-Channel enhancement MOS Field Effect Transistor

2020-04-06 09:43:38

<font color='FF4B0A'>N-Channel, 30V, 5.7A, Power MOSFET CXMS5120 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge</font>

N-Channel, 30V, 5.7A, Power MOSFET CXMS5120 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

N-Channel, 30V, 5.7A, Power MOSFET CXMS5120 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>Small Signal N-Channel, 30V, 0.25A, MOSFET CXMS5121 is N-Channel enhancement MOS Field Effect Transistor</font>

Small Signal N-Channel, 30V, 0.25A, MOSFET CXMS5121 is N-Channel enhancement MOS Field Effect Transistor

Small Signal N-Channel, 30V, 0.25A, MOSFET CXMS5121 is N-Channel enhancement MOS Field Effect Transistor

2020-04-06 09:43:38

<font color='FF4B0A'>Small Signal N-Channel, 30V, 0.2A, MOSFET CXMS5123 is N-Channel enhancement MOS Field Effect Transistor</font>

Small Signal N-Channel, 30V, 0.2A, MOSFET CXMS5123 is N-Channel enhancement MOS Field Effect Transistor

Small Signal N-Channel, 30V, 0.2A, MOSFET CXMS5123 is N-Channel enhancement MOS Field Effect Transistor

2020-04-06 09:43:38

<font color='FF4B0A'>Small Signal N-Channel, 20V, 0.5A, MOSFET CXMS5125 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate char</font>

Small Signal N-Channel, 20V, 0.5A, MOSFET CXMS5125 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate char

Small Signal N-Channel, 20V, 0.5A, MOSFET CXMS5125 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate char

2020-04-06 09:43:38

<font color='FF4B0A'>Small Signal N-Channel, 20V, 0.3A, MOSFET CXMS5126 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate</font>

Small Signal N-Channel, 20V, 0.3A, MOSFET CXMS5126 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate

Small Signal N-Channel, 20V, 0.3A, MOSFET CXMS5126 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate

2020-04-06 09:43:38

<font color='FF4B0A'>Single N-Channel, 45V, 1.7A, Power MOSFET CXMS5127 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.</font>

Single N-Channel, 45V, 1.7A, Power MOSFET CXMS5127 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

Single N-Channel, 45V, 1.7A, Power MOSFET CXMS5127 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

2020-04-06 09:43:38

<font color='FF4B0A'>N-Channel, 20V, 0.88A, Small Signal MOSFET CXMS5128 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate</font>

N-Channel, 20V, 0.88A, Small Signal MOSFET CXMS5128 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate

N-Channel, 20V, 0.88A, Small Signal MOSFET CXMS5128 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate

2020-04-06 09:43:38

<font color='FF4B0A'>Single N-Channel, 60V, 0.50A, Power MOSFET CXMS5129 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate char</font>

Single N-Channel, 60V, 0.50A, Power MOSFET CXMS5129 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate char

Single N-Channel, 60V, 0.50A, Power MOSFET CXMS5129 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate char

2020-04-06 09:43:38

<font color='FF4B0A'>Dual N-Channel, 20V, 0.48A, Power MOSFET CXMS5131 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate</font>

Dual N-Channel, 20V, 0.48A, Power MOSFET CXMS5131 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

Dual N-Channel, 20V, 0.48A, Power MOSFET CXMS5131 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

2020-04-06 09:43:38

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