旧闻博览

旧闻博览

<font color='FF4B0A'>Single P-Channel, -20 V, -1.5 A,Power Mosfet CXMS5151 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge</font>

Single P-Channel, -20 V, -1.5 A,Power Mosfet CXMS5151 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

Single P-Channel, -20 V, -1.5 A,Power Mosfet CXMS5151 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>Single P-Channel, -12V, -5.5A, Power MOSFET CXMS5152 P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge</font>

Single P-Channel, -12V, -5.5A, Power MOSFET CXMS5152 P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

Single P-Channel, -12V, -5.5A, Power MOSFET CXMS5152 P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>CXMS5153 Single P-Channel, -12V, -3.5A, Power MOSFET,Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion,</font>

CXMS5153 Single P-Channel, -12V, -3.5A, Power MOSFET,Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion,

CXMS5153 Single P-Channel, -12V, -3.5A, Power MOSFET,Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion,

2020-04-06 09:43:38

<font color='FF4B0A'>The CXMS5154 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge</font>

The CXMS5154 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

The CXMS5154 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance CXMS5158D</font>

This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance CXMS5158D

This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance CXMS5158D

2020-04-06 09:43:38

<font color='FF4B0A'>Single P-Channel, -20V, -0.73A, Power MOSFET The CXMS5161 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate</font>

Single P-Channel, -20V, -0.73A, Power MOSFET The CXMS5161 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

Single P-Channel, -20V, -0.73A, Power MOSFET The CXMS5161 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

2020-04-06 09:43:38

<font color='FF4B0A'>Single P-Channel, -20V, -3.2A, Power MOSFET CXMS5162 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate</font>

Single P-Channel, -20V, -3.2A, Power MOSFET CXMS5162 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

Single P-Channel, -20V, -3.2A, Power MOSFET CXMS5162 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

2020-04-06 09:43:38

<font color='FF4B0A'>Single P-Channel, -20V, -0.65A, Power MOSFET CXMS5163 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)</font>

Single P-Channel, -20V, -0.65A, Power MOSFET CXMS5163 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)

Single P-Channel, -20V, -0.65A, Power MOSFET CXMS5163 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)

2020-04-06 09:43:38

<font color='FF4B0A'>Single P-Channel, -20V, -3.6A , Power MOSFET CXMS5164 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate</font>

Single P-Channel, -20V, -3.6A , Power MOSFET CXMS5164 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

Single P-Channel, -20V, -3.6A , Power MOSFET CXMS5164 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

2020-04-06 09:43:38

<font color='FF4B0A'>Single P-Channel, -20V, -2.2A, Power MOSFET CXMS5165 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charg</font>

Single P-Channel, -20V, -2.2A, Power MOSFET CXMS5165 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charg

Single P-Channel, -20V, -2.2A, Power MOSFET CXMS5165 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charg

2020-04-06 09:43:38

<font color='FF4B0A'>Single P-Channel, -20V, -6.9A, Power MOSFET CXMS5167 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charg</font>

Single P-Channel, -20V, -6.9A, Power MOSFET CXMS5167 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charg

Single P-Channel, -20V, -6.9A, Power MOSFET CXMS5167 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charg

2020-04-06 09:43:38

<font color='FF4B0A'>Single P-Channel, -20V, -4.0A, Power MOSFET CXMS5168 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charg</font>

Single P-Channel, -20V, -4.0A, Power MOSFET CXMS5168 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charg

Single P-Channel, -20V, -4.0A, Power MOSFET CXMS5168 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charg

2020-04-06 09:43:38

<font color='FF4B0A'>The CXMS5169 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge</font>

The CXMS5169 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

The CXMS5169 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>The CXMS5170 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge</font>

The CXMS5170 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

The CXMS5170 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>P-Channel Enhancement Mode Mosfet CXMS5171 Higher Efficiency Extending Battery Life</font>

P-Channel Enhancement Mode Mosfet CXMS5171 Higher Efficiency Extending Battery Life

P-Channel Enhancement Mode Mosfet CXMS5171 Higher Efficiency Extending Battery Life

2020-04-06 09:43:38

<font color='FF4B0A'>P-Channel Enhancement Mode Mosfet CXMS5171A Super high density cell design for extremely low RDS</font>

P-Channel Enhancement Mode Mosfet CXMS5171A Super high density cell design for extremely low RDS

P-Channel Enhancement Mode Mosfet CXMS5171A Super high density cell design for extremely low RDS

2020-04-06 09:43:38

<font color='FF4B0A'>Single P-Channel, -30V, -5.0A, Power MOSFET CXMS5172 Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge</font>

Single P-Channel, -30V, -5.0A, Power MOSFET CXMS5172 Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

Single P-Channel, -30V, -5.0A, Power MOSFET CXMS5172 Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>Single P-Channel, -30V, -3.1A, Power MOSFET CXMS5174 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate</font>

Single P-Channel, -30V, -3.1A, Power MOSFET CXMS5174 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

Single P-Channel, -30V, -3.1A, Power MOSFET CXMS5174 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

2020-04-06 09:43:38

<font color='FF4B0A'>Single P-Channel, -30V, -3.1A, Power MOSFET CXMS5175 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge</font>

Single P-Channel, -30V, -3.1A, Power MOSFET CXMS5175 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

Single P-Channel, -30V, -3.1A, Power MOSFET CXMS5175 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>Single P-Channel, -30V, -4.6A, Power MOSFET CXMS5176 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology</font>

Single P-Channel, -30V, -4.6A, Power MOSFET CXMS5176 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

Single P-Channel, -30V, -4.6A, Power MOSFET CXMS5176 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

2020-04-06 09:43:38

页次：198/353 每页20 总数7060 首页上一页下一页尾页转到: