20V 1A N沟道 功率MOS FET CXCN5397A13BOMR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be e

发布时间:2020-04-06 09:43:38 浏览次数:703 作者:嘉泰姆
摘要:20V 1A N沟道 功率MOS FET CXCN5397A13BOMR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be e

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The CXCN5397A13BOMR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

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功率MOSFET  N沟道

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(ON) (Ω) Vgs=2.5V MAXtN7嘉泰姆

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CXCN5397A11BOMRtN7嘉泰姆

SOT23tN7嘉泰姆


0.13tN7嘉泰姆

0.17tN7嘉泰姆

1tN7嘉泰姆

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150tN7嘉泰姆

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4.5tN7嘉泰姆

CXCN5397A12B2MRtN7嘉泰姆

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0.16tN7嘉泰姆

0.075tN7嘉泰姆

0.1tN7嘉泰姆

0.7tN7嘉泰姆

1.4tN7嘉泰姆

180tN7嘉泰姆

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CXCN5397A13BOMRtN7嘉泰姆

SOT23tN7嘉泰姆

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0.1tN7嘉泰姆

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0.105tN7嘉泰姆

1tN7嘉泰姆

2.5tN7嘉泰姆

270tN7嘉泰姆

30tN7嘉泰姆

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4.5tN7嘉泰姆

CXCN5398A1265PRtN7嘉泰姆

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0.095tN7嘉泰姆

0.042tN7嘉泰姆

0.055tN7嘉泰姆

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320tN7嘉泰姆

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0.07tN7嘉泰姆

0.037tN7嘉泰姆

0.05tN7嘉泰姆

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1.2tN7嘉泰姆

390tN7嘉泰姆

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8tN7嘉泰姆

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