20V 1A N沟道 功率MOS FET CXCN5397A13BOMR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be e

发布时间:2020-04-06 09:43:38 浏览次数:700 作者:嘉泰姆
摘要:20V 1A N沟道 功率MOS FET CXCN5397A13BOMR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be e

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The CXCN5397A13BOMR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.

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功率MOSFET  N沟道

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Rds43T嘉泰姆

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Rds43T嘉泰姆

(ON) (Ω) Vgs=4.5V 
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Rds43T嘉泰姆

(ON) (Ω) Vgs=4.5V MAX43T嘉泰姆

Vgsoff43T嘉泰姆

V
43T嘉泰姆

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off(V) MAX43T嘉泰姆

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CXCN5397A11BOMR43T嘉泰姆

SOT2343T嘉泰姆


0.1343T嘉泰姆

0.1743T嘉泰姆

143T嘉泰姆

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15043T嘉泰姆

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SOT2343T嘉泰姆

0.1643T嘉泰姆

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0.743T嘉泰姆

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1.243T嘉泰姆

22043T嘉泰姆

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2.543T嘉泰姆

27043T嘉泰姆

3043T嘉泰姆

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443T嘉泰姆

4.543T嘉泰姆

CXCN5398A1265PR43T嘉泰姆

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0.09543T嘉泰姆

0.04243T嘉泰姆

0.05543T嘉泰姆

0.743T嘉泰姆

1.443T嘉泰姆

32043T嘉泰姆

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443T嘉泰姆

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0.03743T嘉泰姆

0.0543T嘉泰姆

0.543T嘉泰姆

1.243T嘉泰姆

39043T嘉泰姆

2043T嘉泰姆

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