中文
EnglishThe JTM8810A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or
摘要：The JTM8810A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or
目录
一,产品概述(General Description) 
The JTM8810A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate voltages as
low as 2.5V. This device is suitable for use as a Battery protection or
in other Switching applications.
二</span>.产品特点(Features)
● VDS = 20V,ID =7A
RDS(ON) < 22mΩ @ VGS =4.5V
RDS(ON) <28mΩ @ VGS =2.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
三</span>,应用范围 (Applications)
●Battery protection
● Load switch
● Power management
四.技术</span>规格书下载（产品PDF）</span>
 | JTM8810A |
五,产品封装图 (Package)
六.电路原理图</span>
七</span>,功能概述
| Symbol | Parameter | Value | Unit |
| VDS | Drain-Source Voltage (VGS=0V）</td> | 20 | V |
| VGS | Gate-Source Voltage (VDS=0V) | ±1 | V |
| ID | Drain Current-Continuous | 7 | A |
| IDM (pluse) | (Note 1) Drain Current-Continuous@ Current-Pulsed | 25 | A |
| PD | Maximum Power Dissipation | W | |
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 To 150 | ℃</td> |
八,相关芯片选择指南
| 型号 | 沟道 | VDS | VGS | VTH | ID | IDM | RDS(on) | 封装 | 状态</td> |
| (Max) | (Max) | (Max) | |||||||
| JTM2302/A | N沟道 | 20V | 10V | 0.75V | 3A | 10A | 30mΩ | SOT23 | 量产 |
| SOT23-3L | |||||||||
| JTM2302B | N沟道 | 20V | 12V | 0.85V | 2.5A | 10A | 46mΩ | SOT23 | 量产 |
| JTM2306/A | N沟道 | 30V | 12V | 0.9V | 5.8A | 22A | 25mΩ | SOT23 | 量产 |
| SOT23-3L | |||||||||
| JTM2300/B | N沟道 | 20V | 12V | 0.65V | 4.5A | 13.5A | 22mΩ | SOT23 | 量产 |
| SOT23-3L | |||||||||
| JTM2312/B | N沟道 | 20V | 12V | 0.65V | 4.5A | 13.5A | 22mΩ | SOT23 | 量产 |
| SOT23-3L | |||||||||
| JTM2314/B | N沟道 | 20V | 12V | 0.65V | 4.5A | 13.5A | 22mΩ | SOT23 | 量产 |
| SOT23-3L | |||||||||
| JTM3400/B | N沟道 | 30V | 12V | 0.9V | 5.8A | 30A | 25mΩ | SOT23 | 量产 |
| SOT23-3L | |||||||||
| JTM3400C | N沟道 | 30V | 20V | 1.5V | 3.6A | 15A | 40mΩ | SOT23 | 量产 |
| JTM3406/B | N沟道 | 30V | 20V | 1.6V | 5.8A | 20A | 25mΩ | SOT23 | 量产 |
| SOT23-3L | |||||||||
| JTM3414/B | N沟道 | 20V | 10V | 0.75V | 3.0A | 10A | 30mΩ | SOT23 | 量产 |
| SOT23-3L | |||||||||
| JTM3416E | N沟道 | 20V | 12V | 0.7V | 6.0A | 30A | 19mΩ | SOT23-3L | 量产 |
| 带ESD保护 | |||||||||
| JTM3420/B | N沟道 | 20V | 12V | 0.65V | 4.5A | 13.5A | 22mΩ | SOT23 | 量产 |
| SOT23-3L | |||||||||
| JTM2318 | N沟道 | 40V | 20V | 2.0V | 4.0A | 20A | 32mΩ | SOT23-3L | 量产 |
| JTM6400 | N沟道 | 30V | 12V | 0.9V | 6.9A | 30A | 25mΩ | SOT23-6L | 量产 |
| JTM7002 | N沟道 | 60V | 20V | 1.7V | 0.115A | 0.8A | 1.3Ω | SOT23 | 量产 |
| JTM2310 | N沟道 | 60V | 20V | 1.4V | 3A | 10A | 105mΩ | SOT23-3L | 量产 |
| JTM3422 | N沟道 | 60V | 20V | 1.4V | 3A | 10A | 105mΩ | SOT23-3L | 量产 |
| JTM2N10MR | N沟道 | 100V | 20V | 1.8V | 2A | 5A | 210mΩ | SOT23-3L | 量产 |
| JTM2324E | N沟道 | 100V | 20V | 1V | 2.7A | 10A | 140mΩ | SOT23-3L | 量产 |
| 带ESD保护 | |||||||||
| JTM4410 | N沟道 | 30V | 20V | 1.6V | 10A | 50A | 7.5mΩ | SOP8 | 量产 |
| JTM4412 | N沟道 | 30V | 20V | 1.0V | 7A | 30A | 22mΩ | SOP8 | 量产 |
| JTM4430 | N沟道 | 30V | 20V | 1.6V | 18A | 50A | 7.5mΩ | SOP8 | 量产 |
| JTM4480 | N沟道 | 40V | 20V | 2.0V | 20A | 50A | 16mΩ | SOP8 | 量产 |
| JTM4440 | N沟道 | 60V | 20V | 2V | 4.5A | 20A | 45mΩ | SOP8 | 量产 |
| JTM4486E | N沟道 | 100V | 20V | 2V | 3.5A | 20A | 85mΩ | SOP8 | 量产 |
| 带ESD保护 | |||||||||
| JTM4488 | N沟道 | 150V | 20V | 3.2V | 5.2A | 42A | 31mΩ | SOP8 | 量产 |
| JTM4490 | N沟道 | 200V | 20V | 3.0V | 3.9A | 30A | 56mΩ | SOP8 | 量产 |
| 双N沟道低压MOS场效应管 | |||||||||
| 型号 | 沟道 | VDS | VGS | VTH | ID | IDM | RDS(on) | 封装 | 状态</td> |
| (Max) | (Max) | (Max) | |||||||
| JTM4812 | 双N沟道 | 30V | 20V | 1.6V | 7A | 30A | 25mΩ | SOP8 | 量产 |
| JTM4822 | 双N沟道 | 30V | 20V | 1.8V | 8A | 30A | 18mΩ | SOP8 | 量产 |
| JTM4828 | 双N沟道 | 60V | 20V | 2V | 4.5A | 20A | 45mΩ | SOP8 | 量产 |
| JTM4886E | 双N沟道 | 100V | 20V | 2V | 3.5A | 20A | 85mΩ | SOP8 | 量产 |
| 带ESD保护 | |||||||||
| JTM9926 | 双N沟道 | 20V | 10V | 0.9V | 5A | 24A | 23mΩ | SOP8 | 量产 |
| JTM8205 | 双N沟道 | 19.5V | 10V | 0.7V | 4A | 16A | 21mΩ | SOT-26 | 量产 |
| JTM8205A | 双N沟道 | 19.5V | 10V | 0.7V | 6A | 25A | 21mΩ | TSSOP8 | 量产 |
| JTM8205B | 双N沟道 | 20V | 10V | 0.65V | 4A/6A | 16A | 24mΩ | SOT-26 | 量产 |
| JTM8810E | 双N沟道 | 20V | 12V | 0.7V | 7A | 30A | 15mΩ | SOT-26 | 量产 |
| 带ESD保护 | TSSOP8 | ||||||||
| JTM8810B | 双N沟道 | 20V | 12V | 0.7V | 7A | 30A | 15mΩ | TSSOP8 | 量产 |
| 带ESD保护 | |||||||||
| 不共D | |||||||||
| JTM8820E | 双N沟道 | 20V | 12V | 0.7V | 7A | 30A | 15mΩ | TSSOP8 | 量产 |
| 带ESD保护 | |||||||||
| JTM8822E | 双N沟道 | 20V | 12V | 0.7V | 7A | 30A | 15mΩ | TSSOP8 | 量产 |
| 带ESD保护 | |||||||||
| JTM6800 | 双N沟道 | 30V | 12V | 0.9V | 5.8A | 30A | 25mΩ | SOT-26 | 量</td> |
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