CXMS5124 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in sma

发布时间：2020-04-06 09:43:38 浏览次数：701 作者：嘉泰姆

摘要：CXMS5124 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in sma

目录AfW嘉泰姆

1.产品概述 2.产品特点 3.应用范围 4.技术规格书下载（PDF文档）AfW嘉泰姆

5.产品封装 6.电路原理图 7.相关产品AfW嘉泰姆

一.产品概述AfW嘉泰姆

The CXMS5124 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in small signal switch. Standard Product CXMS5124 is Pb-free and Halogen-free. AfW嘉泰姆

二.产品特点AfW嘉泰姆

 Trench TechnologyAfW嘉泰姆

 Supper high density cell designAfW嘉泰姆

 Excellent ON resistance for higher DC currentAfW嘉泰姆

 HBM ESD protection >2 kVAfW嘉泰姆

 Small package SOT-523AfW嘉泰姆

三.应用范围AfW嘉泰姆

 Driver: Relay, Solenoid, Lamps,Hammers etc.AfW嘉泰姆

 Power supply converters circuitAfW嘉泰姆

 Load/Power Switching for potable device AfW嘉泰姆

四.技术规格书（产品PDF)AfW嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！AfW嘉泰姆

AfW嘉泰姆

五.产品封装图AfW嘉泰姆

AfW嘉泰姆

六.电路原理图AfW嘉泰姆

AfW嘉泰姆

七.相关芯片选择指南 更多同类产品......AfW嘉泰姆

场效应晶体管 N沟道MOS管</td>
Product	Polarity	Channel	VDS	VGS	VGS(th)	RDS(ON)@VGS=4.5V	ID@TA=25oC	Package	Size
			(Max.)	(Max.)	(Max.)	(Typ.)	(MAX.)		Size
			(V)	(V)	(V)	(Ω)	(A)		(mm)(L×W)
CX380N60T	N	1	600	±30	4.5	0.36	10.6	TO-220	22 x 10
CX380N60TF	N	1	600	±30	4.5	0.36	10.6	TO-220F	29 x 10
CX380N60TG	N	1	600	±30	4.5	0.36	10.6	TO-252E-2	10 x 6.6
CX470N60T	N	1	600	±30	4.5	0.42	9.4	TO-220	22 x 10
CX470N60TF	N	1	600	±30	4.5	0.42	9.4	TO-220F	29 x 10
CX650N60T	N	1	600	±30	4.5	0.55	7.3	TO-220	22 x 10
CX650N60TF	N	1	600	±30	4.5	0.55	7.3	TO-220F	29 x 10
CX650N60TG	N	1	600	±30	4.5	0.55	7.3	TO-252E-2	10 x 6.6
CX650N60TN	N	1	600	±30	4.5	0.55	7.3	TO-251(IPAK)	15.4 x 6.6
CX01N10	N	1	100	±20	2.5	0.255	1.7	SOT-23	2.9 x 2.4
CX01N11	N	1	110	±20	2.5	0.25	1.8	SOT-23-6L	2.9 x 2.8
CX07N60	N	1	600	±30	5	1	7	TO-220	22 x 10
CX07N60F	N	1	600	±30	5	1	7	TO-220F	29 x 10
CX07N65	N	1	650	±30	5	1.05	7	TO-220	22 x 10
CX07N65F	N	1	650	±30	5	1	7	TO-220F	29 x 10
CX12N65	N	1	650	±30	5	0.57	12	TO-220	22 x 10
CX12N65F	N	1	650	±30	5	0.57	12	TO-220F	29 x 10
CXMS5110	N	1	20	±8	1	0.04	3.2	SOT-23	2.9 x 2.4
CXMS5111	N	1	20	±6	0.85	0.22	0.9	SOT-23	2.9 x 2.4
CXMS5112	N	1	20	±6	0.85	0.22	0.89	SOT-323	2.1 x 2.3
CXMS5113	N	1	20	±8	1	0.027	3.9	SOT-23	2.9 x 2.4
CXMS5114	N	1	20	±6	1	0.21	0.95	SOT-723	1.2 x 1.2
CXMS5115	N	1	20	±5	0.85	0.22	0.71	DFN1006-3L	1.0 x 0.6
CXMS5115B	N	1	20	±5	0.85	0.22	0.71	DFN1006-3L	1.0 x 0.6
CXMS5116	N	1	20	±5	0.85	0.22	0.66	DFN1006-3L	1.0 x 0.6
CXMS5117	N	1	20	±10	1	0.42	0.54	SOT-723	1.2 x 1.2
CXMS5118	N	1	30	±20	3	0.043	4	SOT-23	2.9 x 2.4
CXMS5119	N	1	30	±20	2	0.057	3.1	SOT-23	2.9 x 2.4
CXMS5120	N	1	30	±20	3	0.039	5.7	SOT-23-6L	2.9 x 2.8
CXMS5121	N	1	30	±20	1.5	1.3	0.25	SOT-723	1.2 x 1.2
CXMS5122	N	1	30	20	2	0.025	5.7	DFN2020-6L	2.0 x 2.0
CXMS5123	N	1	30	±20	1.5	1.3	0.25	SOT-323	2.1 x 2.3
CXMS5124	N	1	30	±20	1.5	1.3	0.25	SOT-523	1.6 x 1.6
CXMS5125	N	1	20	±6	1	0.41	0.8	SOT-523	1.6 x 1.6
CXMS5126	N	1	20	±6	1	1.65	0.6	SOT-523	1.6 x 1.6
CXMS5127	N	1	45	±20	1.5	0.142	1.7	SOT-23	2.9 x 2.4
CXMS5128	N	1	20	±6	1	0.22	0.88	SOT-523	1.6 x 1.6
CXMS5129	N	1	60	±20	2	1.7	0.5	SOT-23	2.9 x 2.4
CXMS5130	N	1	60	±20	2	1.7	0.3	SOT-323	2.1 x 2.3
CXMS5131	N	2	20	±12	1	0.42	0.56	SOT-363	2.1 x 2.3
CXMS5132	Dual N	2	20	±6	0.85	0.22	0.89	SOT-363	2.1 x 2.3
CXMS5133	Dual N	2	20	±6	0.85	0.22	0.88	SOT-563	1.6 x 1.6
CXMS5134	Dual N	2	20	±10	1	0.0148	7	TSSOP-8L	3 x 6.4
CXMS5135	Dual N	2	20	±10	1	0.0157	6.3	SOT-23-6L	2.9 x 2.8
CXMS5136	Dual N	2	20	±10	1	0.016	4.8	PDFN2.9x2.8-8L	2.9 x 2.8
CXMS5137	Dual N	2	60	±20	2	1.7	0.32	SOT-363	2.1 x 2.3
CXMS5138	Dual N	2	20	±10	1	0.022	5	SOT-23-6L	2.9 x 2.8
CXMS5139	N	2	20	±10	1	0.016	6.3	SOT-23-6	2.92 x 2.8
CXMS5140	Dual N	2	20	±10	1	0.022	5.1	TSSOP-8L	3 x 6.4
CXMS5141	Dual N	2	20	±12	1	0.018	6	WLCSP-4L	1.47 x 1.47
CXMS5142	Dual N	2	20	±10	1	0.015	7	TSSOP-8L	3 x 6.4
CXMS5143	Dual N	2	20	±12	1	0.013	6	WLCSP-4L	1.47 x 1.47
CXMS5144	Dual N	2	12	±10	1.2	0.0095	6	WLCSP-4L	1.47 x 1.47
CXMS5145	Dual N	2	20	±10	1	0.055	2.6	SOT-23-6L	2.9 x 2.8
CXMS5146	Dual N	2	20	±12	1	0.012	6	DFN2020-4L	2.0 x 2.0
CXMS5147	Dual N	2	20	±10	1	0.0175	6.3	TSOT-23-6L	2.9 x 2.8
CXMS5148	N	2	20	±10	1	0.0095	11	PDFN3x3-8L	2.9 x 2.8
CXMS5149	Dual N	2	30	±20	2.2	0.033	6.8	SOP-8L	4.9 x 6.0
CXMS5150	Dual N	2	60	±20	2	1.7	0.3	SOT-563	1.6 x 1.6

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CXMS5124 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in sma

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