中文
EnglishCXMS5215 CXMS5215-N produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications,
CXMS5215 CXMS5215-N Series P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation,and low power dissipation in a very small outline surface mount package
l -30V/-4.2A RDS(ON) =55mΩ@ VGS=-10V,ID=-4.2A
RDS(ON) =62mΩ@ VGS=-4.5V,ID=-4A
RDS(ON) =72mΩ@ VGS=-2.5V,ID=-2.5A
l High Density Cell Design For Ultra Low On-Resistance
l Subminiature surface mount package:SOT23-3L
l Power management
l Load switch
l Battery protection
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MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管) | |||||||
Part | Mode | VDS(Max) | VGS | ID(Max) | RDS(on) | Application | Package |
Number | |||||||
P channel | -20V | -8V | -2.8A | 93mΩ | ①②③④⑤</span> | SOT23/SOT23-3 | |
P channel | -20V | -12V | -3.1A | 77mΩ | ①②③④⑤</span> | SOT23 | |
P channel | -30V | -12V | -4.2A | 55mΩ | ①②③④⑤⑥⑦⑧ | SOT23/SOT23-3 | |
P channel | -30V | -20V | -2.9A | 92mΩ | ①②③④⑤⑥⑦⑧ | SOT23 | |
P channel | -30V | -20V | -4.1A | 46mΩ | ①②③④⑤⑥⑦⑧ | SOT23/SOT23-3 | |
P channel | -30V | -20V | -6A | 46mΩ | ①②③④⑤⑥⑦⑨ | SOP8/SOT89-3 | |
Double P | -30V | -20V | -6A | 53mΩ | ①②③④⑤⑥⑦⑧ | SOP8 | |
Double P | -30V | -20V | -6A | 46mΩ | ①②③④⑤⑥⑦⑧ | SOP8 | |
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protection | |||||||
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