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EnglishP-Channel MOSFET JTMM2307XG，produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications
摘要：P-Channel MOSFET JTMM2307XG，produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications
JTMM2307XG Series P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation, and low power dissipation in a very small outline surface mount package.
l -30V/-4.1A RDS(ON)＜88mΩ@ VGS=-10V,ID=-4.1A
RDS(ON)＜108mΩ@ VGS=-4.5V,ID=-3A
l High Density Cell Design For Ultra Low On-Resistance
l Subminiature surface mount package: SOT23
l Power management
l Load switch
l Battery protection
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| Part | Mode | VDS(Max) | VGS | ID(Max) | RDS(on) | Application | Package |
| Number | |||||||
| JTMM2300-N | N channel | 20V | 12V | 5.2A | 37mΩ | ①②③④⑤⑥⑦⑧ | SOT23 |
| JTMM2301 | P channel | -20V | -8V | -2.8A | 93mΩ | ①②③④⑤</td> | SOT23/SOT23-3 |
| JTMM2301-N | P channel | -20V | -12V | -3.1A | 77mΩ | ①②③④⑤</td> | SOT23 |
| JTMM2303 | P channel | -30V | -12V | -4.2A | 55mΩ | ①②③④⑤⑥⑦⑧ | SOT23/SOT23-3 |
| JTMM2303-N | P channel | -30V | -20V | -2.9A | 92mΩ | ①②③④⑤⑥⑦⑧ | SOT23 |
| JTMM2307 | P channel | -30V | -20V | -4.1A | 46mΩ | ①②③④⑤⑥⑦⑧ | SOT23/SOT23-3 |
| JTMM2309 | P channel | -30V | -20V | -6A | 46mΩ | ①②③④⑤⑥⑦⑨ | SOP8/SOT89-3 |
| JTMM2311 | Double P | -30V | -20V | -6A | 53mΩ | ①②③④⑤⑥⑦⑧ | SOP8 |
| JTMM2313 | Double P | -30V | -20V | -6A | 46mΩ | ①②③④⑤⑥⑦⑧ | SOP8 |
| JTMM2302 | N channel | 20V | 8V | 3A | 22mΩ | ①②③④⑤⑥⑦⑧ | SOT23/SOT23-3 |
| JTMM2302-N | N channel | 20V | 12V | 5.2A | 29mΩ | ①②③④⑤⑥⑦⑧ | SOT23 |
| JTMM2306 | Double N | 20V | 12V | 6A | 22mΩ | ①②③④⑤⑥⑦⑧ | SOP8 |
| JTMM2310 | N channel | 30V | 12V | 5.8A | 25mΩ | ①②③④⑤⑥⑦⑧ | SOT23/SOT23-3 |
| JTMM2310-N | N channel | 30V | 20V | 4.4A | 35mΩ | ①②③④⑤⑥⑦⑧ | SOT23 |
| JTMM8205 | Double N | 20V | 12V | 6A | 21mΩ | ①②③④⑤</td> | SOT23-6/ TSSOP8 |
| JTMM2318 | Double N | 20V | 12V | 5A | 19mΩ | ①②③④⑤⑥⑦⑧ | TSSOP8/SOT23-6 |
| Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power ManageJTMnt Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protection | |||||||
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