Small Signal N-Channel, 20V, 0.3A, MOSFET CXMS5126 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate

发布时间：2020-04-06 09:43:38 浏览次数：702 作者：嘉泰姆

摘要：Small Signal N-Channel, 20V, 0.3A, MOSFET CXMS5126 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate

The CXMS5126 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in small signal switch. Standard product CXMS5126 is Pb-free.

产品特点 返回TOPyGS嘉泰姆

z Trench N-Channel yGS嘉泰姆

z Supper high density cell design for extremely low Rds(on) yGS嘉泰姆

z Exceptional ON resistance and maximum DC current capability yGS嘉泰姆

z Small package design with SOT-523yGS嘉泰姆

应用范围 返回TOPyGS嘉泰姆

z Driver: Relays, Solenoids, Lamps, Hammers yGS嘉泰姆

z Power supply converters circuit yGS嘉泰姆

z Load/Power Switching for potable deviceyGS嘉泰姆

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场效应晶体管 N沟道MOS管</td>
Product	Polarity	Channel	VDS	VGS	VGS(th)	RDS(ON)@VGS=4.5V	ID@TA=25oC	Package	Size
			(Max.)	(Max.)	(Max.)	(Typ.)	(MAX.)		Size
			(V)	(V)	(V)	(Ω)	(A)		(mm)(L×W)
CX380N60T	N	1	600	±30	4.5	0.36	10.6	TO-220	22 x 10
CX380N60TF	N	1	600	±30	4.5	0.36	10.6	TO-220F	29 x 10
CX380N60TG	N	1	600	±30	4.5	0.36	10.6	TO-252E-2	10 x 6.6
CX470N60T	N	1	600	±30	4.5	0.42	9.4	TO-220	22 x 10
CX470N60TF	N	1	600	±30	4.5	0.42	9.4	TO-220F	29 x 10
CX650N60T	N	1	600	±30	4.5	0.55	7.3	TO-220	22 x 10
CX650N60TF	N	1	600	±30	4.5	0.55	7.3	TO-220F	29 x 10
CX650N60TG	N	1	600	±30	4.5	0.55	7.3	TO-252E-2	10 x 6.6
CX650N60TN	N	1	600	±30	4.5	0.55	7.3	TO-251(IPAK)	15.4 x 6.6
CX01N10	N	1	100	±20	2.5	0.255	1.7	SOT-23	2.9 x 2.4
CX01N11	N	1	110	±20	2.5	0.25	1.8	SOT-23-6L	2.9 x 2.8
CX07N60	N	1	600	±30	5	1	7	TO-220	22 x 10
CX07N60F	N	1	600	±30	5	1	7	TO-220F	29 x 10
CX07N65	N	1	650	±30	5	1.05	7	TO-220	22 x 10
CX07N65F	N	1	650	±30	5	1	7	TO-220F	29 x 10
CX12N65	N	1	650	±30	5	0.57	12	TO-220	22 x 10
CX12N65F	N	1	650	±30	5	0.57	12	TO-220F	29 x 10
CXMS5110	N	1	20	±8	1	0.04	3.2	SOT-23	2.9 x 2.4
CXMS5111	N	1	20	±6	0.85	0.22	0.9	SOT-23	2.9 x 2.4
CXMS5112	N	1	20	±6	0.85	0.22	0.89	SOT-323	2.1 x 2.3
CXMS5113	N	1	20	±8	1	0.027	3.9	SOT-23	2.9 x 2.4
CXMS5114	N	1	20	±6	1	0.21	0.95	SOT-723	1.2 x 1.2
CXMS5115	N	1	20	±5	0.85	0.22	0.71	DFN1006-3L	1.0 x 0.6
CXMS5115B	N	1	20	±5	0.85	0.22	0.71	DFN1006-3L	1.0 x 0.6
CXMS5116	N	1	20	±5	0.85	0.22	0.66	DFN1006-3L	1.0 x 0.6
CXMS5117	N	1	20	±10	1	0.42	0.54	SOT-723	1.2 x 1.2
CXMS5118	N	1	30	±20	3	0.043	4	SOT-23	2.9 x 2.4
CXMS5119	N	1	30	±20	2	0.057	3.1	SOT-23	2.9 x 2.4
CXMS5120	N	1	30	±20	3	0.039	5.7	SOT-23-6L	2.9 x 2.8
CXMS5121	N	1	30	±20	1.5	1.3	0.25	SOT-723	1.2 x 1.2
CXMS5122	N	1	30	20	2	0.025	5.7	DFN2020-6L	2.0 x 2.0
CXMS5123	N	1	30	±20	1.5	1.3	0.25	SOT-323	2.1 x 2.3
CXMS5124	N	1	30	±20	1.5	1.3	0.25	SOT-523	1.6 x 1.6
CXMS5125	N	1	20	±6	1	0.41	0.8	SOT-523	1.6 x 1.6
CXMS5126	N	1	20	±6	1	1.65	0.6	SOT-523	1.6 x 1.6
CXMS5127	N	1	45	±20	1.5	0.142	1.7	SOT-23	2.9 x 2.4
CXMS5128	N	1	20	±6	1	0.22	0.88	SOT-523	1.6 x 1.6
CXMS5129	N	1	60	±20	2	1.7	0.5	SOT-23	2.9 x 2.4
CXMS5130	N	1	60	±20	2	1.7	0.3	SOT-323	2.1 x 2.3
CXMS5131	N	2	20	±12	1	0.42	0.56	SOT-363	2.1 x 2.3
CXMS5132	Dual N	2	20	±6	0.85	0.22	0.89	SOT-363	2.1 x 2.3
CXMS5133	Dual N	2	20	±6	0.85	0.22	0.88	SOT-563	1.6 x 1.6
CXMS5134	Dual N	2	20	±10	1	0.0148	7	TSSOP-8L	3 x 6.4
CXMS5135	Dual N	2	20	±10	1	0.0157	6.3	SOT-23-6L	2.9 x 2.8
CXMS5136	Dual N	2	20	±10	1	0.016	4.8	PDFN2.9x2.8-8L	2.9 x 2.8
CXMS5137	Dual N	2	60	±20	2	1.7	0.32	SOT-363	2.1 x 2.3
CXMS5138	Dual N	2	20	±10	1	0.022	5	SOT-23-6L	2.9 x 2.8
CXMS5139	N	2	20	±10	1	0.016	6.3	SOT-23-6	2.92 x 2.8
CXMS5140	Dual N	2	20	±10	1	0.022	5.1	TSSOP-8L	3 x 6.4
CXMS5141	Dual N	2	20	±12	1	0.018	6	WLCSP-4L	1.47 x 1.47
CXMS5142	Dual N	2	20	±10	1	0.015	7	TSSOP-8L	3 x 6.4
CXMS5143	Dual N	2	20	±12	1	0.013	6	WLCSP-4L	1.47 x 1.47
CXMS5144	Dual N	2	12	±10	1.2	0.0095	6	WLCSP-4L	1.47 x 1.47
CXMS5145	Dual N	2	20	±10	1	0.055	2.6	SOT-23-6L	2.9 x 2.8
CXMS5146	Dual N	2	20	±12	1	0.012	6	DFN2020-4L	2.0 x 2.0
CXMS5147	Dual N	2	20	±10	1	0.0175	6.3	TSOT-23-6L	2.9 x 2.8
CXMS5148	N	2	20	±10	1	0.0095	11	PDFN3x3-8L	2.9 x 2.8
CXMS5149	Dual N	2	30	±20	2.2	0.033	6.8	SOP-8L	4.9 x 6.0
CXMS5150	Dual N	2	60	±20	2	1.7	0.3	SOT-563	1.6 x 1.6

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上一篇： Small Signal N-Channel, 20V, 0.5A, MOSFET CXMS5125 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate char

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Small Signal N-Channel, 20V, 0.3A, MOSFET CXMS5126 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate

目录

The CXMS5126 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in small signal switch. Standard product CXMS5126 is Pb-free.

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Small Signal N-Channel, 20V, 0.3A, MOSFET CXMS5126 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate

目录

The CXMS5126 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in small signal switch. Standard product CXMS5126 is Pb-free.

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