Dual N-Channel, 20V, 6A, Power MOSFET CXMS5143 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOS

发布时间：2020-04-06 09:43:38 浏览次数：702 作者：嘉泰姆

摘要：Dual N-Channel, 20V, 6A, Power MOSFET CXMS5143 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOS

The CXMS5143 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge. This device is designed for Lithium-Ion battery protection circuit. The CXMS5143 is available in CSP 4L package. Standard Product CXMS5143 is Pb-free and Halogen-free.

产品特点 返回TOPSeS嘉泰姆

 Trench Technology SeS嘉泰姆

 Supper high density cell design SeS嘉泰姆

 Excellent ON resistance for higher DC current SeS嘉泰姆

 Extremely Low Threshold VoltageSeS嘉泰姆

应用范围 返回TOPSeS嘉泰姆

 Lithium-Ion battery protection circuitSeS嘉泰姆

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场效应晶体管 N沟道MOS管</td>
Product	Polarity	Channel	VDS	VGS	VGS(th)	RDS(ON)@VGS=4.5V	ID@TA=25oC	Package	Size
			(Max.)	(Max.)	(Max.)	(Typ.)	(MAX.)		Size
			(V)	(V)	(V)	(Ω)	(A)		(mm)(L×W)
CX380N60T	N	1	600	±30	4.5	0.36	10.6	TO-220	22 x 10
CX380N60TF	N	1	600	±30	4.5	0.36	10.6	TO-220F	29 x 10
CX380N60TG	N	1	600	±30	4.5	0.36	10.6	TO-252E-2	10 x 6.6
CX470N60T	N	1	600	±30	4.5	0.42	9.4	TO-220	22 x 10
CX470N60TF	N	1	600	±30	4.5	0.42	9.4	TO-220F	29 x 10
CX650N60T	N	1	600	±30	4.5	0.55	7.3	TO-220	22 x 10
CX650N60TF	N	1	600	±30	4.5	0.55	7.3	TO-220F	29 x 10
CX650N60TG	N	1	600	±30	4.5	0.55	7.3	TO-252E-2	10 x 6.6
CX650N60TN	N	1	600	±30	4.5	0.55	7.3	TO-251(IPAK)	15.4 x 6.6
CX01N10	N	1	100	±20	2.5	0.255	1.7	SOT-23	2.9 x 2.4
CX01N11	N	1	110	±20	2.5	0.25	1.8	SOT-23-6L	2.9 x 2.8
CX07N60	N	1	600	±30	5	1	7	TO-220	22 x 10
CX07N60F	N	1	600	±30	5	1	7	TO-220F	29 x 10
CX07N65	N	1	650	±30	5	1.05	7	TO-220	22 x 10
CX07N65F	N	1	650	±30	5	1	7	TO-220F	29 x 10
CX12N65	N	1	650	±30	5	0.57	12	TO-220	22 x 10
CX12N65F	N	1	650	±30	5	0.57	12	TO-220F	29 x 10
CXMS5110	N	1	20	±8	1	0.04	3.2	SOT-23	2.9 x 2.4
CXMS5111	N	1	20	±6	0.85	0.22	0.9	SOT-23	2.9 x 2.4
CXMS5112	N	1	20	±6	0.85	0.22	0.89	SOT-323	2.1 x 2.3
CXMS5113	N	1	20	±8	1	0.027	3.9	SOT-23	2.9 x 2.4
CXMS5114	N	1	20	±6	1	0.21	0.95	SOT-723	1.2 x 1.2
CXMS5115	N	1	20	±5	0.85	0.22	0.71	DFN1006-3L	1.0 x 0.6
CXMS5115B	N	1	20	±5	0.85	0.22	0.71	DFN1006-3L	1.0 x 0.6
CXMS5116	N	1	20	±5	0.85	0.22	0.66	DFN1006-3L	1.0 x 0.6
CXMS5117	N	1	20	±10	1	0.42	0.54	SOT-723	1.2 x 1.2
CXMS5118	N	1	30	±20	3	0.043	4	SOT-23	2.9 x 2.4
CXMS5119	N	1	30	±20	2	0.057	3.1	SOT-23	2.9 x 2.4
CXMS5120	N	1	30	±20	3	0.039	5.7	SOT-23-6L	2.9 x 2.8
CXMS5121	N	1	30	±20	1.5	1.3	0.25	SOT-723	1.2 x 1.2
CXMS5122	N	1	30	20	2	0.025	5.7	DFN2020-6L	2.0 x 2.0
CXMS5123	N	1	30	±20	1.5	1.3	0.25	SOT-323	2.1 x 2.3
CXMS5124	N	1	30	±20	1.5	1.3	0.25	SOT-523	1.6 x 1.6
CXMS5125	N	1	20	±6	1	0.41	0.8	SOT-523	1.6 x 1.6
CXMS5126	N	1	20	±6	1	1.65	0.6	SOT-523	1.6 x 1.6
CXMS5127	N	1	45	±20	1.5	0.142	1.7	SOT-23	2.9 x 2.4
CXMS5128	N	1	20	±6	1	0.22	0.88	SOT-523	1.6 x 1.6
CXMS5129	N	1	60	±20	2	1.7	0.5	SOT-23	2.9 x 2.4
CXMS5130	N	1	60	±20	2	1.7	0.3	SOT-323	2.1 x 2.3
CXMS5131	N	2	20	±12	1	0.42	0.56	SOT-363	2.1 x 2.3
CXMS5132	Dual N	2	20	±6	0.85	0.22	0.89	SOT-363	2.1 x 2.3
CXMS5133	Dual N	2	20	±6	0.85	0.22	0.88	SOT-563	1.6 x 1.6
CXMS5134	Dual N	2	20	±10	1	0.0148	7	TSSOP-8L	3 x 6.4
CXMS5135	Dual N	2	20	±10	1	0.0157	6.3	SOT-23-6L	2.9 x 2.8
CXMS5136	Dual N	2	20	±10	1	0.016	4.8	PDFN2.9x2.8-8L	2.9 x 2.8
CXMS5137	Dual N	2	60	±20	2	1.7	0.32	SOT-363	2.1 x 2.3
CXMS5138	Dual N	2	20	±10	1	0.022	5	SOT-23-6L	2.9 x 2.8
CXMS5139	N	2	20	±10	1	0.016	6.3	SOT-23-6	2.92 x 2.8
CXMS5140	Dual N	2	20	±10	1	0.022	5.1	TSSOP-8L	3 x 6.4
CXMS5141	Dual N	2	20	±12	1	0.018	6	WLCSP-4L	1.47 x 1.47
CXMS5142	Dual N	2	20	±10	1	0.015	7	TSSOP-8L	3 x 6.4
CXMS5143	Dual N	2	20	±12	1	0.013	6	WLCSP-4L	1.47 x 1.47
CXMS5144	Dual N	2	12	±10	1.2	0.0095	6	WLCSP-4L	1.47 x 1.47
CXMS5145	Dual N	2	20	±10	1	0.055	2.6	SOT-23-6L	2.9 x 2.8
CXMS5146	Dual N	2	20	±12	1	0.012	6	DFN2020-4L	2.0 x 2.0
CXMS5147	Dual N	2	20	±10	1	0.0175	6.3	TSOT-23-6L	2.9 x 2.8
CXMS5148	N	2	20	±10	1	0.0095	11	PDFN3x3-8L	2.9 x 2.8
CXMS5149	Dual N	2	30	±20	2.2	0.033	6.8	SOP-8L	4.9 x 6.0
CXMS5150	Dual N	2	60	±20	2	1.7	0.3	SOT-563	1.6 x 1.6

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上一篇： Dual N-Channel, 20V, 7.0A, Power MOSFET CXMS5142 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

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Dual N-Channel, 20V, 6A, Power MOSFET CXMS5143 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOS

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Dual N-Channel, 20V, 6A, Power MOSFET CXMS5143 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOS

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