Dual P-Channel, -20 V, - .1A, Power MOSFET CXMS5183 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

发布时间：2020-04-06 09:43:38 浏览次数：702 作者：嘉泰姆

摘要：Dual P-Channel, -20 V, - .1A, Power MOSFET CXMS5183 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

The CXMS5183 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product CXMS5183 is Pb-free

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Product	Polarity	Channel	VDS	VGS	VGS(th)	RDS(ON)@VGS=4.5V	ID@TA=25oC	Package	Size
			(Max.)	(Max.)	(Max.)	(Typ.)	(MAX.)		Size
			(V)	(V)	(V)	(Ω)	(A)		(mm)(L×W)
CXMS5151	P	1	-20	±8	-1	0.11	-1.4	SOT-323	2.1 x 2.3
CXMS5152	P	1	-12	±12	-0.9	0.022	-5.1	DFN2020-6L	2.0 x 2.0
CXMS5153	P	1	-12	±8	-0.9	0.031	-3.5	SOT-23	2.9 x 2.4
CXMS5154	P	1	-12	±8	-1	0.015	-7.4	DFN2020-6L	2.0 x 2.0
CXMS5155	P	1	-12	±8	-0.9	0.08	-1.5	SOT-323	2.1 x 2.3
CXMS5156	P+Diode	1	-20	±8	-0.8	-	-2.9	DFN3020-8L	3.0 x 2.0
CXMS5156B	P+Diode	1	-20	±8	-0.8	-	-2.7	DFN3020-8L	3.0 x 2.0
CXMS5157	P+Diode	1	-20	±8	-1	0.09	-3	DFN2020-6L	2.0 x 2.0
CXMS5158D	P	1	-20	±12	-1	0.042	-4	DFN3030-8L	3.0 x 3.0
CXMS5159	P	1	-20	±8	-0.9	0.05	-4.1	DFN2020-6L	2.0 x 2.0
CXMS5160	P	1	-20	±8	-0.8	0.081	-2.2	SOT-23	2.9 x 2.4
CXMS5161	P	1	-20	±5	-0.9	0.48	-0.62	SOT-523	1.6 x 1.6
CXMS5162	P	1	-20	±12	-1	0.056	-2.9	SOT-23	2.9 x 2.4
CXMS5163	P	1	-20	±5	-0.8	0.495	-0.6	SOT-723	1.2 x 1.2
CXMS5164	P	1	-20	±12	-1	0.047	-3.3	SOT-23-6L	2.9 x 2.8
CXMS5165	P	1	-20	±12	-1	0.096	-2.2	SOT-23	2.9 x 2.4
CXMS5166	P	1	-20	±5	-0.9	-	-0.51	DFN1006-3L	1.0 x 0.6
CXMS5166B	P	1	-20	±5	-0.9	0.44	-0.51	DFN1006-3L	1.0 x 0.6
CXMS5167	P	1	-20	±8	-1	0.017	-6.2	DFN2020-6L	2.0 x 2.0
CXMS5168	P	1	-20	±12	-1	0.043	-4	SOT-23-3L	2.9 x 2.8
CXMS5169	P	1	-20	±12	-1	0.043	-3.2	SOT-23	2.9 x 2.4
CXMS5170	P	1	-20	±8	-1	0.081	-2.4	SOT-23	2.9 x 2.4
CXMS5171	P	1	-20	±8	-1	0.052	-3.5	SOT-23-3L	2.9 x 2.8
CXMS5171A	P	1	-20	±12	-1	0.052	-3.5	SOT-23-3L	2.9 x 2.8
CXMS5172	P	1	-30	±20	-2.5	0.079	-3.8	SOP-8L	4.9 x 6.0
CXMS5173	P	1	-30	±20	-2.5	0.083	-4.1	SOT-23-3L	2.9 x 2.8
CXMS5174	P	1	-30	±20	-2.5	0.08	-2.9	SOT-23	2.9 x 2.4
CXMS5175	P	1	-30	±20	-2.5	0.077	-3.1	SOT-23	2.9 x 2.4
CXMS5176	P	1	-30	±12	-1.5	0.043	-4.6	SOT-23-3L	2.9 x 2.8
CXMS5177	P	1	-30	±20	-3	0.053	-3.7	SOT-23-3L	2.9 x 2.8
CXMS5178	Dual P	2	-30	±12	-1.4	0.045	-5.6	SOP-8L	4.9 x 6.0
CXMS5179	Dual P	2	-30	±20	-3	0.053	-5.5	SOP-8L	4.9 x 6.0
CXMS5180	P	1	-50	±20	-2	3.5	-0.2	SOT-23	2.9 x 2.4
CXMS5181	P	1	-20	±12	-1	0.025	-5.7	SOT-23-3	2.9 x 2.8
CXMS5182	P	1	-30	±20	-3	0.053	-5.5	SOP-8L	4.9 x 6.0
CXMS5182A	P	1	-30	±20	-3	0.043	-5.4	SOP-8L	4.9 x 6.0
CXMS5183	Dual P	2	-20	±8	-1	0.09	-3	DFN2020-6L	2.0 x 2.0
CXMS5184	Dual P	2	-20	±12	-1	0.075	-3.1	DFN2020-6L	2.0 x 2.0
CXMS5185	Dual P	2	-20	±12	-1	0.052	-3.7	DFN2020-6L	2.0 x 2.0
CXMS5186	Dual P	2	-20	±6	-0.9	0.55	-0.56	SOT-563	1.6 x 1.6
CXMS5187	Dual P	2	-20	±12	-2.5	0.07	-3.6	SOT-23-6L	2.9 x 2.8
CXMS5188	Dual P	2	-20	±12	-2.5	0.07	-4.6	SOP-8L	4.9 x 6.0
CXMS5189	Dual P	2	-20	±10	-1	0.08	-3.3	DFN2020-6L	2.0 x 2.0
CXMS5190	Dual P	2	-30	±20	-2.5	0.07	-3.8	SOP-8L	4.9 x 6.0

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上一篇： Single P-Channel, - V, -0.2A, Power MOSFET CXMS5180 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charg

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Dual P-Channel, -20 V, - .1A, Power MOSFET CXMS5183 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

目录

The CXMS5183 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product CXMS5183 is Pb-free

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Dual P-Channel, -20 V, - .1A, Power MOSFET CXMS5183 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

目录

The CXMS5183 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product CXMS5183 is Pb-free

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