Dual P-Channel, -20 V, -3.6A, Power MOSFET CXMS5184,advanced trench technology and design to provide excellent RDS(ON) with low gate charge

发布时间：2020-04-06 09:43:38 浏览次数：700 作者：嘉泰姆

摘要：Dual P-Channel, -20 V, -3.6A, Power MOSFET CXMS5184,advanced trench technology and design to provide excellent RDS(ON) with low gate charge

The CXMS5184 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product CXMS5184 is Pb-free.

产品特点 返回TOPFbc嘉泰姆

z Lower RDS(on) Solution in 2x2 mm Package Fbc嘉泰姆

z 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Fbc嘉泰姆

Level Fbc嘉泰姆

z Low Profile (< 0.8 mm) for Easy Fit in Thin Environments Fbc嘉泰姆

z Bidirectional Current Flow with Common Source Configuration Fbc嘉泰姆

z DFN6 Package Provides Exposed Drain Pad for Excellent Thermal Fbc嘉泰姆

ConductionFbc嘉泰姆

应用范围 返回TOPFbc嘉泰姆

z Optimized for Battery and Load Management Applications in Fbc嘉泰姆

MARKING DIAGRAM Portable Equipment Fbc嘉泰姆

z Li−Ion Battery Charging and Protection Circuits W L S I FYWW Fbc嘉泰姆

z High Power Management in Portable, Battery Powered Products Fbc嘉泰姆

z High Side Load SwitchFbc嘉泰姆

技术规格书（产品PDF) 返回TOP Fbc嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持</span>！</span>
Fbc嘉泰姆

Fbc嘉泰姆

产品封装图 返回TOPFbc嘉泰姆

Fbc嘉泰姆

电路原理图 返回TOPFbc嘉泰姆

Fbc嘉泰姆

相关芯片选择指南返回TOP 更多同类产品.....

Fbc嘉泰姆

场效应晶体管 P沟道MOS管</td>
Product	Polarity	Channel	VDS	VGS	VGS(th)	RDS(ON)@VGS=4.5V	ID@TA=25oC	Package	Size
			(Max.)	(Max.)	(Max.)	(Typ.)	(MAX.)		Size
			(V)	(V)	(V)	(Ω)	(A)		(mm)(L×W)
CXMS5151	P	1	-20	±8	-1	0.11	-1.4	SOT-323	2.1 x 2.3
CXMS5152	P	1	-12	±12	-0.9	0.022	-5.1	DFN2020-6L	2.0 x 2.0
CXMS5153	P	1	-12	±8	-0.9	0.031	-3.5	SOT-23	2.9 x 2.4
CXMS5154	P	1	-12	±8	-1	0.015	-7.4	DFN2020-6L	2.0 x 2.0
CXMS5155	P	1	-12	±8	-0.9	0.08	-1.5	SOT-323	2.1 x 2.3
CXMS5156	P+Diode	1	-20	±8	-0.8	-	-2.9	DFN3020-8L	3.0 x 2.0
CXMS5156B	P+Diode	1	-20	±8	-0.8	-	-2.7	DFN3020-8L	3.0 x 2.0
CXMS5157	P+Diode	1	-20	±8	-1	0.09	-3	DFN2020-6L	2.0 x 2.0
CXMS5158D	P	1	-20	±12	-1	0.042	-4	DFN3030-8L	3.0 x 3.0
CXMS5159	P	1	-20	±8	-0.9	0.05	-4.1	DFN2020-6L	2.0 x 2.0
CXMS5160	P	1	-20	±8	-0.8	0.081	-2.2	SOT-23	2.9 x 2.4
CXMS5161	P	1	-20	±5	-0.9	0.48	-0.62	SOT-523	1.6 x 1.6
CXMS5162	P	1	-20	±12	-1	0.056	-2.9	SOT-23	2.9 x 2.4
CXMS5163	P	1	-20	±5	-0.8	0.495	-0.6	SOT-723	1.2 x 1.2
CXMS5164	P	1	-20	±12	-1	0.047	-3.3	SOT-23-6L	2.9 x 2.8
CXMS5165	P	1	-20	±12	-1	0.096	-2.2	SOT-23	2.9 x 2.4
CXMS5166	P	1	-20	±5	-0.9	-	-0.51	DFN1006-3L	1.0 x 0.6
CXMS5166B	P	1	-20	±5	-0.9	0.44	-0.51	DFN1006-3L	1.0 x 0.6
CXMS5167	P	1	-20	±8	-1	0.017	-6.2	DFN2020-6L	2.0 x 2.0
CXMS5168	P	1	-20	±12	-1	0.043	-4	SOT-23-3L	2.9 x 2.8
CXMS5169	P	1	-20	±12	-1	0.043	-3.2	SOT-23	2.9 x 2.4
CXMS5170	P	1	-20	±8	-1	0.081	-2.4	SOT-23	2.9 x 2.4
CXMS5171	P	1	-20	±8	-1	0.052	-3.5	SOT-23-3L	2.9 x 2.8
CXMS5171A	P	1	-20	±12	-1	0.052	-3.5	SOT-23-3L	2.9 x 2.8
CXMS5172	P	1	-30	±20	-2.5	0.079	-3.8	SOP-8L	4.9 x 6.0
CXMS5173	P	1	-30	±20	-2.5	0.083	-4.1	SOT-23-3L	2.9 x 2.8
CXMS5174	P	1	-30	±20	-2.5	0.08	-2.9	SOT-23	2.9 x 2.4
CXMS5175	P	1	-30	±20	-2.5	0.077	-3.1	SOT-23	2.9 x 2.4
CXMS5176	P	1	-30	±12	-1.5	0.043	-4.6	SOT-23-3L	2.9 x 2.8
CXMS5177	P	1	-30	±20	-3	0.053	-3.7	SOT-23-3L	2.9 x 2.8
CXMS5178	Dual P	2	-30	±12	-1.4	0.045	-5.6	SOP-8L	4.9 x 6.0
CXMS5179	Dual P	2	-30	±20	-3	0.053	-5.5	SOP-8L	4.9 x 6.0
CXMS5180	P	1	-50	±20	-2	3.5	-0.2	SOT-23	2.9 x 2.4
CXMS5181	P	1	-20	±12	-1	0.025	-5.7	SOT-23-3	2.9 x 2.8
CXMS5182	P	1	-30	±20	-3	0.053	-5.5	SOP-8L	4.9 x 6.0
CXMS5182A	P	1	-30	±20	-3	0.043	-5.4	SOP-8L	4.9 x 6.0
CXMS5183	Dual P	2	-20	±8	-1	0.09	-3	DFN2020-6L	2.0 x 2.0
CXMS5184	Dual P	2	-20	±12	-1	0.075	-3.1	DFN2020-6L	2.0 x 2.0
CXMS5185	Dual P	2	-20	±12	-1	0.052	-3.7	DFN2020-6L	2.0 x 2.0
CXMS5186	Dual P	2	-20	±6	-0.9	0.55	-0.56	SOT-563	1.6 x 1.6
CXMS5187	Dual P	2	-20	±12	-2.5	0.07	-3.6	SOT-23-6L	2.9 x 2.8
CXMS5188	Dual P	2	-20	±12	-2.5	0.07	-4.6	SOP-8L	4.9 x 6.0
CXMS5189	Dual P	2	-20	±10	-1	0.08	-3.3	DFN2020-6L	2.0 x 2.0
CXMS5190	Dual P	2	-30	±20	-2.5	0.07	-3.8	SOP-8L	4.9 x 6.0

文章标签

暂无标签

上一篇： Dual P-Channel, -20 V, - .1A, Power MOSFET CXMS5183 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

下一篇： CXMS5185

相关推荐

暂无相关推荐

发表评论

共有条评论

用户名: 密码:

验证码: 匿名发表

最新信息

热门信息

推荐信息

头条信息

Dual P-Channel, -20 V, -3.6A, Power MOSFET CXMS5184,advanced trench technology and design to provide excellent RDS(ON) with low gate charge

目录

The CXMS5184 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product CXMS5184 is Pb-free.

相关芯片选择指南返回TOP 更多同类产品.....

文章标签

发表评论

关注我们

最新信息

热门信息

推荐信息

头条信息

Dual P-Channel, -20 V, -3.6A, Power MOSFET CXMS5184,advanced trench technology and design to provide excellent RDS(ON) with low gate charge

目录

The CXMS5184 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product CXMS5184 is Pb-free.

相关芯片选择指南 返回TOP 更多同类产品.....

文章标签

相关推荐

发表评论

关注我们

相关芯片选择指南返回TOP 更多同类产品.....