首页 > 产品中心 > 功率器件 > N沟道P沟道双极MOSFETs >The CXPP5452CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
The CXPP5452CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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The CXPP5452CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
N channel
VDS =60V, ID =6.3A
RDS(ON)<30mΩ @ VGS=10V
P channel
VDS =-60V, ID =-5A
RDS(ON)<80mΩ @ VGS=-10V
High power and current handing capability
Lead free product is acquired
Surface mount package
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[ CXPP5452CS ]"
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The CXPP5452CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
产品特点 返回TOP
N channel
VDS =60V, ID =6.3A
RDS(ON)<30mΩ @ VGS=10V
P channel
VDS =-60V, ID =-5A
RDS(ON)<80mΩ @ VGS=-10V
High power and current handing capability
Lead free product is acquired
Surface mount package
应用范围 返回TOP
H-bridge
Inverters
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| MOSFET | ||||||||
| Part | N-Channel | P-Channel | Operating | Package | ||||
| number | VDS (V) | RDS(ON) (mΩ) VGS=10V | VGS(th)(V) | VDS (V) | RDS(ON) (mΩ) VGS=-10V | VGS(th)（V） | Temperature(℃) | |
| CXPP5449CS | 30 | 36 | 1.5 | -30 | 69 | -1.6 | -145 | SOT23-6L |
| CXPP5450CS | 30 | 20 | 1.6 | -30 | 28 | -1.9 | -145 | SOP-8 |
| CXPP5451CS | 40 | 15.4 | 1.7 | -40 | 26 | -1.5 | -145 | SOP-8 |
| CXPP5452CS | 60 | 37 | 2 | -60 | 64 | -26 | -145 | SOP-8 |
