CXMS5224双N沟道增强型场效应晶体管，采用高密度DMOS沟道技术制造，主要用于减小通态电阻。这种装置特别适合于低电压应用和低功耗。
20V/6A
RDS(ON) =18mΩ@ VGS=4.5V,ID=6A
RDS(ON) =19mΩ@ VGS=3.85V,ID=5A
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[ CXMS5224 ]"
目录
产品概述 返回TOP
CXMS5224FG Series Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation.
产品特点 返回TOP
z 20V/6A
RDS(ON) =18mΩ@ VGS=4.5V,ID=6A
RDS(ON) =19mΩ@ VGS=3.85V,ID=5A
z High Density Cell Design For Ultra Low On-Resistance
z Surface mount package：SOP8 z ESD Protected: 3000 V
应用范围 返回TOP
z Battery management
z power management
z Portable equipment
z Low power DC to DC converter.
z Load switch z LCD adapter
技术规格书（产品PDF) 返回TOP
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产品封装图 返回TOP
电路原理图 返回TOP
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MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管) |
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|
Part |
Mode |
VDS(Max) |
VGS |
ID(Max) |
RDS(on) |
Application |
Package |
|
N channel |
20V |
12V |
5.2A |
37mΩ |
①②③④⑤⑥⑦⑧ |
SOT23 |
|
|
N channel |
20V |
8V |
3A |
22mΩ |
①②③④⑤⑥⑦⑧ |
SOT23/SOT23-3 |
|
|
N channel |
20V |
12V |
5.2A |
29mΩ |
①②③④⑤⑥⑦⑧ |
SOT23 |
|
|
Double N |
20V |
12V |
6A |
22mΩ |
①②③④⑤⑥⑦⑧ |
SOP8 |
|
|
N channel |
30V |
12V |
5.8A |
25mΩ |
①②③④⑤⑥⑦⑧ |
SOT23/SOT23-3 |
|
|
N channel |
30V |
20V |
4.4A |
35mΩ |
①②③④⑤⑥⑦⑧ |
SOT23 |
|
|
Double N |
20V |
12V |
6A |
21mΩ |
①②③④⑤ |
SOT23-6/ TSSOP8 |
|
|
Double N |
20V |
12V |
5A |
19mΩ |
①②③④⑤⑥⑦⑧ |
TSSOP8/SOT26 |
|
|
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protection |
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