CXMS5209是双P通道逻辑增强型功率场效应晶体管，采用高密度DMOS沟道技术制造。这种高密度工艺特别适合于最小化导通电阻。这些设备特别适用于低电压应用，如液晶背光、笔记本电脑电源管理、液晶电视、液晶显示器和其他电池供电电路
-30V/-5.0A, RDS(ON) = 65mΩ @VGS =-10V
-30V/-4.4A, RDS(ON) = 85mΩ @VGS = -6.0V
-30V/-3.8A, RDS(ON) = 95mΩ @VGS = -4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
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[ CXMS5209 ]
目录
1.产品概述 2.产品特点 3.应用范围 4.技术规格书下载（PDF文档）
一.产品概述
CXMS5209 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, LCD-TV , LCD- Monitor and other battery powered circuits
二.产品特点
z -30V/-5.0A, RDS(ON) = 65mΩ @VGS =-10V
z -30V/-4.4A, RDS(ON) = 85mΩ @VGS = -6.0V
z -30V/-3.8A, RDS(ON) = 95mΩ @VGS = -4.5V
z Super high density cell design for extremely low RDS(ON)
z Exceptional on-resistance and maximum DC current capability
z SOP-8 package design
三.应用范围
四.技术规格书（产品PDF)
需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！
五.产品封装图
六.电路原理图
七.相关芯片选择指南 更多的同类产品......
| MOSFET | |
| 型号 | 说明 |
| CXMS5207 | 30V/4A PMOS |
| CXMS5208A | 5A PMOS |
| CXMS5209 | 5A/30V 双PMOS |
| CXMS5204 | 3.5A/ 20V PMOS |
| CXMS5205 | 4A/ 30V PMOS |
| CXMS5201 | 2A P MOS |
◀ 上一篇:双P沟道-30V -4.9A功率MOSFET CXMS5190是双P沟道逻辑模式功率场效应晶体管采用高密度DMOS沟道技术制造用于低压应用笔记本电脑电源管理和其他电池供电电路的高压侧开关
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