CXSD6286将脉宽调制和线性控制器以及监控和保护功能集成到一个软件包中驱动双N通道mosfet的同步PWM控制器

目录UNv嘉泰姆

1.产品概述                       2.产品特点UNv嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 UNv嘉泰姆
5.产品封装图                     6.电路原理图                   UNv嘉泰姆
7.功能概述                        8.相关产品UNv嘉泰姆

一,产品概述(General Description)         UNv嘉泰姆

         The CXSD6286 integrates PWM and linear controller, as well as the monitoring and protection functions into a single package. The synchronous PWM controller which drives dual N-channel MOSFETs, which provides one controlled power outputs with under-voltage and over-current protections. Linear controller drives an external N-channel MOSFET with under-voltage protection.UNv嘉泰姆
         CXSD6286 provides excellent regulation for output load variation. An internal 0.8V temperature-compensated ref-erence voltage is designed to meet the arious low out-put voltage applications. CXSD6286 includes a 250kHz free-running triangle-wave oscillator that is adjustable from 70kHz to 800kHz.A power-on-reset (POR) circuit limits the VCC minimum opearting supply voltage to assure the controller working well. Over current protection is achieved by monitoring the voltage drop across the low side MOSFET, eliminat-ing the need for a current sensing resistor and short cir-cuit condition is detected through the FB pin. The over-current protection triggers the soft-start function until the fault events be removed, but Under-voltage protection will shutdown IC directly.Pull the COMP pin below 0.4V will shutdown the controller,and both gate drive signals will be lowUNv嘉泰姆
二.产品特点(Features)UNv嘉泰姆

1.）Provide Two Regulated VoltagesUNv嘉泰姆
      - Synchronous Rectified Buck PWM ControllerUNv嘉泰姆
      - Linear ControllerUNv嘉泰姆
2.）Fast Transient ResponseUNv嘉泰姆
      - 0~85% Duty RatioUNv嘉泰姆
3.）Excellent Output Voltage RegulationUNv嘉泰姆
     - 0.8V Internal ReferenceUNv嘉泰姆
     - ±1% Over Line Voltage and TemperatureUNv嘉泰姆
4.）Over Current ProtectionUNv嘉泰姆
     - Sense Low-Side MOSFET’s RDS(ON)UNv嘉泰姆
5.）Under Voltage LockoutUNv嘉泰姆
6.）Small Converter SizeUNv嘉泰姆
      - 250kHz Free-Running OscillatorUNv嘉泰姆
      - Programmable From 70kHz to 800kHzUNv嘉泰姆
7.）14-Lead SOIC PackageUNv嘉泰姆
8.）Lead Free and Green Devices AvailableUNv嘉泰姆
       (RoHS Compliant)UNv嘉泰姆
三,应用范围 (Applications)UNv嘉泰姆

Graphic CardsUNv嘉泰姆
Memory Power SuppliesUNv嘉泰姆
DSL or Cable MODEMsUNv嘉泰姆
Set Top BoxesUNv嘉泰姆
Low-Voltage Distributed Power SuppliesUNv嘉泰姆
四.下载产品资料PDF文档 UNv嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！UNv嘉泰姆

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五,产品封装图 (Package)UNv嘉泰姆

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六.电路原理图UNv嘉泰姆

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七,功能概述UNv嘉泰姆

MOSFET SelectionUNv嘉泰姆
The selection of the N-channel power MOSFETs is deter-mined by the RDS(ON), reverse transferUNv嘉泰姆
capacitance (CRSS),and maximum output current requirement.The losses in the MOSFETs have twoUNv嘉泰姆
components: conduction loss and transition loss. For the upper and lower MOSFET, the losses areUNv嘉泰姆
approximately given by the following equations:UNv嘉泰姆
PUPPER = Iout (1+ TC)(RDS(ON))D + (0.5)(Iout)(VIN)(tsw)FSUNv嘉泰姆
where IOUT is the load currentUNv嘉泰姆
TC is the temperature dependency of RDS(ON)UNv嘉泰姆
FS is the switching frequencyUNv嘉泰姆
tsw is the switching intervalUNv嘉泰姆
D is the duty cycleUNv嘉泰姆
Note that both MOSFETs have conduction losses while the upper MOSFET include an additional transitionUNv嘉泰姆
loss.The switching internal, tsw, is the function of the reverse transfer capacitance CRSS. Figure 7 illustratesUNv嘉泰姆
the switch-ing waveform internal of the MOSFET.The (1+TC) term factors in the temperature dependencyUNv嘉泰姆
of the RDS(ON) and can be extracted from the “RDS(ON) vs Tem-perature” curve of the power MOSFET.UNv嘉泰姆
Linear Regulator Input/Output Capacitor SelectionUNv嘉泰姆
The input capacitor is chosen based on its voltage rating.Under load transient condition, the input capacitor willUNv嘉泰姆
momentarily supply the required transient current. A 1μF ceramic capacitor will be sufficient in most applications.UNv嘉泰姆
The output capacitor for the linear regulator is chosen to minimize any droop during load transient condition. InUNv嘉泰姆
addition, the capacitor is chosen based on its voltage rating.UNv嘉泰姆
Linear Regulator MOSFET SelectionUNv嘉泰姆
The maximum DRIVE voltage is determined by the VCC.Since this pin drives an external N-channel MOSFET, UNv嘉泰姆

the maximum output voltage of the linear regulator is depen-dent upon the VGS.UNv嘉泰姆
VOUT2MAX = VCC- VGSUNv嘉泰姆
Another criteria is its efficiency of heat removal. The power dissipated by the MOSFET is given by:UNv嘉泰姆
Pdiss = Iout * (VIN - VOUT2)UNv嘉泰姆
where Iout is the maximum load current UNv嘉泰姆
Vout2 is the nominal output voltage In some applications, heatsink may be required to helpUNv嘉泰姆
maintain the junction temperature of the MOSFET below its maximum rating.UNv嘉泰姆
Layout ConsiderationUNv嘉泰姆
In high power switching regulator, a correct layout is im-portant to ensure proper operation of the regulator. InUNv嘉泰姆
general, interconnecting impedances should be mini-mized by using short and wide printed circuit traces. Sig-UNv嘉泰姆
nal and power grounds are to be kept separate and finally combined using ground plane construction or single point grounding. Figure 8 illustrates the layout, with bold lines indicating high current paths. Components along the bold lines should be placed close together. Below is a check-list for your layout:UNv嘉泰姆
· Keep the switching nodes (UGATE, LGATE, and PHASE)away from sensitive small signal nodes since theseUNv嘉泰姆
nodes are fast moving signals. Therefore, keep traces to these nodes as short as possible.UNv嘉泰姆
· The ground return of CIN must return to the combine COUT (-) terminal.UNv嘉泰姆

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