CXSD6297电压模式固定300kHz开关频率同步降压变换器上电复位(POR)电路监测VCC电源电压以防止错误的逻辑控制

发布时间:2020-04-22 16:04:08 浏览次数:336 作者:oumao18 来源:嘉泰姆
摘要:CXSD6297内置的软启动电路可防止输出电压过冲,并限制输入电流。为了满足低输出电压应用的要求,设计了一种高精度的0.8V温度补偿参考电压CXSD6297针对负载电流变化提供了出色的输出电压调节。CXSD6297内置了参考电压偏移功能,用于需要调整电源电压的应用。
CXSD6297电压模式固定300kHz开关频率同步降压变换器上电复位(POR)电路监测VCC电源电压以防止错误的逻辑控制

目录Npq嘉泰姆

1.产品概述                       2.产品特点Npq嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 Npq嘉泰姆
5.产品封装图                     6.电路原理图                   Npq嘉泰姆
7.功能概述                        8.相关产品Npq嘉泰姆

一,产品概述(General Description)     Npq嘉泰姆


  The CXSD6297 is a voltage mode, fixed 300kHz switching frequency, synchronous buck converter. The CXSD6297 allows wide input voltage that is either a single 5V~12V or two supply voltage(s) for various applications. The power-on-reset (POR) circuit monitors the VCC supply voltage to prevent wrong logic controls. A built-in soft-start circuit prevents the output voltages from overshoot as well as limits the input current. An internal 0.8V tempera-ture-compensated reference voltage with high accuracy is designed to meet the requirement of low output volt-age applications. The CXSD6297 provides excellent out-put voltage regulations against load current variation.CXSD6297 is built in reference voltage offset function for applications that require adjusting supply voltage.The controller’s over-current protection monitors the out-put current by using the voltage drop across the RDS(ON) of low-side MOSFET, eliminating the need for a current sens-ing resistor that features high efficiency and low cost. In addition, the CXSD6297 also integrates excellent protec-tion functions, The over-voltage protection (OVP) , under-voltage protection (UVP) and over-temperature protec-tion (OTP). OVP circuit which monitors the FB voltage to prevent the PWM output from over voltage, and UVP cir-cuit which monitors the FB voltage to prevent the PWM output from under voltage or short circuit. OTP circuit whichNpq嘉泰姆
monitors the junction temperature to prevent over-heat-ing conditions.Npq嘉泰姆
  The CXSD6297 is available in TDFN3x3-10 packageNpq嘉泰姆
二.产品特点(Features)Npq嘉泰姆


1.)Wide 5V to 12V Supply VoltageNpq嘉泰姆
2.)Power-On-Reset Monitoring on VCCNpq嘉泰姆
3.)Excellent Output Voltage RegulationsNpq嘉泰姆
     - 0.8V Internal ReferenceNpq嘉泰姆
     - ±1% Over Temperature Range Npq嘉泰姆
4.)Integrated Soft-StartNpq嘉泰姆
5.)Voltage Mode PWM Operation with External CompensationNpq嘉泰姆
6.)Up to 90% Duty Ratio for Fast Transient ResponseNpq嘉泰姆
7.)Constant Switching FrequencyNpq嘉泰姆
    - 300kHz ±10%Npq嘉泰姆
8.)Integrated Bootstrap Forward P-CH MOSFETNpq嘉泰姆
9.)Drive Dual Low Cost N-MOSFETs with Adaptive Dead Time ControlNpq嘉泰姆
10.)50% Under-Voltage ProtectionNpq嘉泰姆
11.)125% Over-Voltage ProtectionNpq嘉泰姆
12.)Adjustable Over-Current Protection ThresholdNpq嘉泰姆
    - Using the RDS(ON) of Low-Side MOSFETNpq嘉泰姆
13.)Shutdown Control by COMPNpq嘉泰姆
14.)Power Good MonitoringNpq嘉泰姆
15.)TDFN3x3-10 PackageNpq嘉泰姆
16.)Lead Free and Green Devices Available (RoHS Compliant)Npq嘉泰姆
三,应用范围 (Applications)Npq嘉泰姆


Graphic CardsNpq嘉泰姆
DSL, Switch HUBNpq嘉泰姆
Wireless LanNpq嘉泰姆
Notebook ComputerNpq嘉泰姆
Mother BoardNpq嘉泰姆
LCD Monitor/TVNpq嘉泰姆
四.下载产品资料PDF文档 Npq嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持Npq嘉泰姆

 QQ截图20160419174301.jpgNpq嘉泰姆

 Npq嘉泰姆

五,产品封装图 (Package)Npq嘉泰姆


blob.pngNpq嘉泰姆

六.电路原理图Npq嘉泰姆


blob.pngNpq嘉泰姆

七,功能概述Npq嘉泰姆


Layout ConsiderationNpq嘉泰姆
In any high switching frequency converter, a correct lay-out is important to ensure proper operation of theNpq嘉泰姆
regulator. With power devices switching at 300kHz,the resulting current transient will cause voltage spike acrossNpq嘉泰姆
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transitionNpq嘉泰姆
of the PWM MOSFET. Before turn-off, the MOSFET is car-rying the full load current. During turn-off, current stopsNpq嘉泰姆
flowing in the MOSFET and is free-wheeling by the lower MOSFET and parasitic diode. Any parasitic inductance ofNpq嘉泰姆
the circuit generates a large voltage spike during the switching interval. In general, using short and wide printedNpq嘉泰姆
circuit traces should minimize interconnecting impedNpq嘉泰姆
Layout Consideration (Cont.)Npq嘉泰姆
ances and the magnitude of voltage spike. And signal and power grounds are to be kept separate till combinedNpq嘉泰姆
using ground plane construction or single point grounding. Figure 8. illustrates the layout, with bold linesNpq嘉泰姆
indicating high current paths; these traces must be short and wide. Components along the bold lines should beNpq嘉泰姆
placed lose together. Below is a checklist for your layout:Npq嘉泰姆
- Keep the switching nodes (UGATE, LGATE, and PHASE) away from sensitive small signal nodes since theseNpq嘉泰姆
nodes are fast moving signals. Therefore, keep traces to these nodes as short as possible.Npq嘉泰姆
 The traces from the gate drivers to the MOSFETs (UG and LG) should be short and wide.Npq嘉泰姆
- Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible. Minimiz-Npq嘉泰姆
ing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node.Npq嘉泰姆
 Decoupling capacitor, compensation component, the resistor dividers, and boot capacitors should be closeNpq嘉泰姆
their pins. (For example, place the decoupling ceramic capacitor near the drain of the high-side MOSFET asNpq嘉泰姆
close as possible. The bulk capacitors are also placed near the drain).Npq嘉泰姆
- The input capacitor should be near the drain of the up-per MOSFET; the output capacitor should be near theNpq嘉泰姆
loads. The input capacitor GND should be close to the output capacitor GND and the lower MOSFET GND.Npq嘉泰姆
- The drain of the MOSFETs (VIN and PHASE nodes) should be a large plane for heat sinking.Npq嘉泰姆
The ROCSET resistance should be placed near the IC as close as possible.Npq嘉泰姆

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