CXSD6299|A电压模式固定300kHz开关频率和同步降压控制器允许宽输入电压为5~12V

发布时间:2020-04-22 16:03:41 浏览次数:326 作者:oumao18 来源:嘉泰姆
摘要:CXSD6299|A允许宽输入电压它可以是一个5~12V的电源电压,也可以是两个不同应用的电源电压。上电复位(POR)电路监测VCC电源电压以防止逻辑控制错误。内置数字软启动电路防止输出电压过冲以及限制输入电流。
CXSD6299|A电压模式固定300kHz开关频率和同步降压控制器允许宽输入电压为5~12V

目录3HJ嘉泰姆

1.产品概述                       2.产品特点3HJ嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 3HJ嘉泰姆
5.产品封装图                     6.电路原理图                   3HJ嘉泰姆
7.功能概述                        8.相关产品3HJ嘉泰姆

一,产品概述(General Description)         3HJ嘉泰姆


 The CXSD6299 is a voltage mode, fixed 300kHz-switch-ing frequency,3HJ嘉泰姆
and synchronous buck controller. The CXSD6299 allows wide input voltage3HJ嘉泰姆
that is either a single 5~12V or two supply voltage(s) for various applications.3HJ嘉泰姆
A power-on-reset (POR) circuit monitors the VCC supply voltage to prevent3HJ嘉泰姆
wrong logic controls. A built-in digital soft-start circuit prevents the output3HJ嘉泰姆
voltages from over-shoot as well as limits the input current. An internal 0.8V3HJ嘉泰姆

temperature-compensated reference voltage with high accuracy is designed to 3HJ嘉泰姆

meet the requirement of low out-put voltage applications. The CXSD6299 3HJ嘉泰姆

provides excel-lent output voltage regulations against load current variation.3HJ嘉泰姆

 The controller’s over-current protection monitors the out-put current by3HJ嘉泰姆
using the voltage drops across the RDS(ON)of low-side MOSFET, eliminating3HJ嘉泰姆
the need for a current sensing resistor that features high efficiency and low cost.3HJ嘉泰姆

The CXSD6299 also integrates over-voltage protection (OVP) and under-voltage 3HJ嘉泰姆

protection circuit which moni-tors the FB voltage to prevent the PWM output 3HJ嘉泰姆

from over and under voltage.3HJ嘉泰姆

  The CXSD6299 is available in a simple SOP-8P package3HJ嘉泰姆
二.产品特点(Features)3HJ嘉泰姆


1.)Wide Operation Supply Voltage from 5V to 12V3HJ嘉泰姆
2.)Power-On-Reset Monitoring on VCC3HJ嘉泰姆
3.)Excellent Reference Voltage Regulations3HJ嘉泰姆
     - 0.8V Internal Reference3HJ嘉泰姆
     - ±1% Over-Temperature Range3HJ嘉泰姆
4.)Integrated Soft-Start3HJ嘉泰姆
5.)Automatic PSM/PWM Modes3HJ嘉泰姆
6.)Voltage Mode PWM Operation with 90% (Max.)Duty Cycle3HJ嘉泰姆
7.)Under-Voltage Protection3HJ嘉泰姆
8.)Adjustable Over-Current Protection Threshold3HJ嘉泰姆
- Sensing the RDS(ON) of Low-Side MOSFET3HJ嘉泰姆
9.)Over-Voltage Protection Under-Voltage Protection3HJ嘉泰姆
     Simple SOP-8P Package3HJ嘉泰姆
10.)Lead Free and Green Devices Available (RoHS Compliant)3HJ嘉泰姆
三,应用范围 (Applications)3HJ嘉泰姆


Graphic Cards3HJ嘉泰姆
DSL, Switch HUB3HJ嘉泰姆
Wireless Lan3HJ嘉泰姆
Notebook Computer3HJ嘉泰姆
Mother Board3HJ嘉泰姆
LCD Monitor/TV3HJ嘉泰姆
四.下载产品资料PDF文档 3HJ嘉泰姆


需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持3HJ嘉泰姆

 QQ截图20160419174301.jpg3HJ嘉泰姆

 3HJ嘉泰姆

五,产品封装图 (Package)3HJ嘉泰姆


blob.png3HJ嘉泰姆

六.电路原理图3HJ嘉泰姆


blob.png3HJ嘉泰姆
七,功能概述3HJ嘉泰姆


Layout Consideration3HJ嘉泰姆
In any high switching frequency converter, a correct lay-out is important to ensure proper operation of the3HJ嘉泰姆
regulator. With power devices switching at 300kHz,the resulting current transient will cause voltage spike across3HJ嘉泰姆
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transition3HJ嘉泰姆
of the PWM MOSFET. Before turn-off, the MOSFET is car-rying the full load current. During turn-off, current stops3HJ嘉泰姆
flowing in the MOSFET and is free-wheeling by the lower MOSFET and parasitic diode. Any parasitic inductance of3HJ嘉泰姆
the circuit generates a large voltage spike during the switching interval. In general, using short and wide printed3HJ嘉泰姆
circuit traces should minimize interconnecting imped-3HJ嘉泰姆
Layout Consideration (Cont.)3HJ嘉泰姆
ances and the magnitude of voltage spike. And signal and power grounds are to be kept separate till combined3HJ嘉泰姆
using ground plane construction or single point grounding. Figure 8. illustrates the layout, with bold lines3HJ嘉泰姆
indicating high current paths; these traces must be short and wide. Components along the bold lines should be3HJ嘉泰姆
placed lose together. Below is a checklist for your layout:3HJ嘉泰姆
- Keep the switching nodes (UGATE, LGATE, and PHASE) away from sensitive small signal nodes since these3HJ嘉泰姆
nodes are fast moving signals. Therefore, keep traces to these nodes as short as possible.3HJ嘉泰姆
The traces from the gate drivers to the MOSFETs (UG and LG) should be short and wide.3HJ嘉泰姆
- Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible. Minimiz-3HJ嘉泰姆
ing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node.3HJ嘉泰姆
- Decoupling capacitor, compensation component, the resistor dividers, and boot capacitors should be close3HJ嘉泰姆
their pins. (For example, place the decoupling ceramic capacitor near the drain of the high-side MOSFET as3HJ嘉泰姆
close as possible. The bulk capacitors are also placed near the drain).3HJ嘉泰姆
- The input capacitor should be near the drain of the up-per MOSFET; the output capacitor should be near the3HJ嘉泰姆
loads. The input capacitor GND should be close to the output capacitor GND and the lower MOSFET GND.3HJ嘉泰姆
- The drain of the MOSFETs (VIN and PHASE nodes) should be a large plane for heat sinking.3HJ嘉泰姆
- The ROCSET resistance should be placed near the IC as close as possible.3HJ嘉泰姆

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