CXSD62108单相恒定时间同步的脉宽调制控制器驱动N通道mosfet笔记本电脑中产生低压芯片组RAM电源的电压

发布时间:2020-04-23 14:31:47 浏览次数:307 作者:oumao18 来源:嘉泰姆
摘要:CXSD62108配备了精确的正电流限制、输出欠压和输出过电压保护,非常适合NB应用。 上电复位功能监控VCC和PVCC上的电压防止上电时误操作。CXSD62108具有1.2ms数字 软启动和内置的集成输出放电装置软停止。一个内部集成软启动可编程增加输出电压 降低启动电流的回转率。主动软停止功能放电输出电容器
CXSD62108单相恒定时间同步的脉宽调制控制器驱动N通道mosfet笔记本电脑中产生低压芯片组RAM电源的电压

目录cgh嘉泰姆

1.产品概述                       2.产品特点cgh嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 cgh嘉泰姆
5.产品封装图                     6.电路原理图                   cgh嘉泰姆
7.功能概述                        8.相关产品cgh嘉泰姆

一,产品概述(General Description)         cgh嘉泰姆
      The CXSD62108 is a single-phase, constant-on-time,synchronous PWMcgh嘉泰姆
controller, which drives N-channel MOSFETs. The CXSD62108 steps down highcgh嘉泰姆
voltage to generate low-voltage chipset or RAM supplies in notebook computers.cgh嘉泰姆
      The CXSD62108 provides excellent transient response and accurate DCcgh嘉泰姆
voltage output in either PFM or PWM Mode.In Pulse Frequency Mode (PFM),cgh嘉泰姆
the CXSD62108 provides very high efficiency over light to heavy loads with cgh嘉泰姆

loading-modulated switching frequencies. In PWM Mode, the converter workscgh嘉泰姆

nearly at constant frequency for low-noise requirements.cgh嘉泰姆
    The CXSD62108 is equipped with accurate positive current-limit, outputcgh嘉泰姆
under-voltage, and output over-voltage protections, perfect for NB applications.cgh嘉泰姆
The Power-On-Reset function monitors the voltage on VCC and PVCC tocgh嘉泰姆
prevent wrong operation during power-on. The CXSD62108 has a 1.2ms digitalcgh嘉泰姆
soft-start and built-in an integrated output discharge device for soft-stop. An cgh嘉泰姆

internal integrated soft-start ramps up the output voltage with programmable cgh嘉泰姆

slew rate to reduce the start-up current. A soft-stop function actively cgh嘉泰姆

discharges the output capacitors.cgh嘉泰姆
       The CXSD62108 is available in 14pin TSSOP, 14pin QFN and 16pin TQFNcgh嘉泰姆
packages respectively.cgh嘉泰姆
二.产品特点(Features)cgh嘉泰姆
Adjustable Output Voltage from +0.75V to +5.5Vcgh嘉泰姆
- 0.75V Reference Voltagecgh嘉泰姆
- ±1% Accuracy Over-Temperaturecgh嘉泰姆
Operates from An Input Battery Voltage Range ofcgh嘉泰姆
+1.8V to +28Vcgh嘉泰姆
Power-On-Reset Monitoring on VCC Pin and PVCC Pincgh嘉泰姆
Excellent Line and Load Transient Responsescgh嘉泰姆
PFM Mode for Increased Light Load Efficiencycgh嘉泰姆
Programmable PWM Frequency from 100kHz to 500kHzcgh嘉泰姆
Integrated MOSFET Driverscgh嘉泰姆
Integrated Bootstrap Forward P-CH MOSFETcgh嘉泰姆
Adjustable Integrated Soft-Start and Soft-Stopcgh嘉泰姆
Selectable Forced PWM or Automatic PFM/PWM Modecgh嘉泰姆
Power Good Monitoringcgh嘉泰姆
70% Under-Voltage Protectioncgh嘉泰姆
125% Over-Voltage Protectioncgh嘉泰姆
Adjustable Current-Limit Protectioncgh嘉泰姆
- Using Sense Low-Side MOSFET’s RDS(ON)cgh嘉泰姆
Over-Temperature Protectioncgh嘉泰姆
TSSOP-14, QFN3.5x3.5-14, and TQFN3x3-16 Packagescgh嘉泰姆
Lead Free and Green Devices Available (RoHS Compliant)cgh嘉泰姆
三,应用范围 (Applications)cgh嘉泰姆
Notebookcgh嘉泰姆
Table PCcgh嘉泰姆
Hand-Held Portablecgh嘉泰姆
AIO PCcgh嘉泰姆
四.下载产品资料PDF文档 cgh嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们,还可以获得免费样品以及技术支持cgh嘉泰姆

 QQ截图20160419174301.jpgcgh嘉泰姆

五,产品封装图 (Package)cgh嘉泰姆

blob.pngcgh嘉泰姆

六.电路原理图cgh嘉泰姆


blob.pngcgh嘉泰姆
七,功能概述cgh嘉泰姆


Layout Consideration (Cont.)cgh嘉泰姆
· The signals going through theses traces have both high dv/dt and high di/dt with high peak charging and dis-cgh嘉泰姆
charging current. The traces from the gate drivers to the MOSFETs (UGATE and LGATE) should be short and wide.cgh嘉泰姆
· Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible. Minimiz-cgh嘉泰姆
ing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node. Incgh嘉泰姆
addition, the large layout plane between the drain of the MOSFETs (VIN and PHASE nodes) can get better heatcgh嘉泰姆
sinking.cgh嘉泰姆
· The PGND is the current sensing circuit reference ground and also the power ground of the LGATE low-cgh嘉泰姆
side MOSFET. On the hand, the PGND trace should be a separate trace and independently go to the source of thecgh嘉泰姆
low-side MOSFET. Besides, the current sense resistor should be close to OCSET pin to avoid parasitic capaci-cgh嘉泰姆
tor effect and noise coupling.cgh嘉泰姆
· Decoupling capacitors, the resistor-divider, and boot capacitor should be close to their pins. (For example, placecgh嘉泰姆
the decoupling ceramic capacitor close to the drain of the high-side MOSFET as close as possible.)cgh嘉泰姆
· The input bulk capacitors should be close to the drain of the high-side MOSFET, and the output bulk capacitorscgh嘉泰姆
should be close to the loads. The input capacitor’s ground should be close to the grounds of the output capacitorscgh嘉泰姆
and low-side MOSFET.cgh嘉泰姆
· Locate the resistor-divider close to the FB pin to mini-mize the high impedance trace. In addition, FB pin tracescgh嘉泰姆
can’t be close to the switching signal traces (UGATE, LGATE, BOOT, and PHASE).cgh嘉泰姆
八,相关产品                      更多同类产品...... cgh嘉泰姆


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