CXSD62116A|B|C电压模式固定300kHz开关频率和同步降压控制器两个电源电压模式

目录lmD嘉泰姆

1.产品概述                       2.产品特点lmD嘉泰姆
3.应用范围                       4.下载产品资料PDF文档 lmD嘉泰姆
5.产品封装图                     6.电路原理图                   lmD嘉泰姆
7.功能概述                        8.相关产品lmD嘉泰姆

一,产品概述(General Description)         lmD嘉泰姆
        The CXSD62116A/B/C is a voltage mode, fixed 300kHz-switching frequency,lmD嘉泰姆
and synchronous buck controller. The CXSD62116A/B/C allows wide input voltagelmD嘉泰姆
that is either a single 5~12V or two supply voltage(s) for various applications.lmD嘉泰姆
A power-on-reset (POR) circuit monitors the VCC supply voltage to preventlmD嘉泰姆
wrong logic controls. A built-in digital soft-start circuit prevents the outputlmD嘉泰姆
voltages from overshoot as well as limits the input current. An internallmD嘉泰姆
0.6V temperature-compensated reference voltage with high accuracy islmD嘉泰姆
designed to meet the requirement of low output voltage applications.lmD嘉泰姆
The CXSD62116A/B/C provides excellent output voltage regulations againstlmD嘉泰姆
load current variation.lmD嘉泰姆
     The controller’s over-current protection monitors the output currentlmD嘉泰姆
by using the voltage drops across the RDS(ON)of low-side MOSFET,lmD嘉泰姆
eliminating the need for a current sensing resistor that features highlmD嘉泰姆
efficiency and low cost.lmD嘉泰姆
     The CXSD62116A/B/C also integrates over-voltage protection (OVP) andlmD嘉泰姆
under-voltage protection circuit which moni-tors the FB voltage to preventlmD嘉泰姆
the PWM output from over and under voltage.lmD嘉泰姆
     The CXSD62116A/B/C is available in a simple SOP-8P package.lmD嘉泰姆
二.产品特点(Features)lmD嘉泰姆
Wide Operation Supply Voltage from 5V to 12VlmD嘉泰姆
Power-On-Reset Monitoring on VCC lmD嘉泰姆
Excellent Reference Voltage RegulationslmD嘉泰姆
- 0.6V Internal ReferencelmD嘉泰姆
- ±1% Over Temperature RangelmD嘉泰姆
Integrated Soft-StartlmD嘉泰姆
Automatic PSM/PWM ModeslmD嘉泰姆
Voltage Mode PWM Operation with 90% (Max.) Duty CyclelmD嘉泰姆
Under-Voltage ProtectionlmD嘉泰姆
Adjustable Over-Current Protection ThresholdlmD嘉泰姆
- Sensing the RDS(ON) of Low-Side MOSFETlmD嘉泰姆
Over-Voltage ProtectionlmD嘉泰姆
Under-Voltage ProtectionlmD嘉泰姆
Simple SOP-8P PackagelmD嘉泰姆
Lead Free and Green Devices AvailablelmD嘉泰姆
(RoHS Compliant)lmD嘉泰姆
三,应用范围 (Applications)lmD嘉泰姆
Graphic CardslmD嘉泰姆
DSL, Switch HUBlmD嘉泰姆
Wireless LanlmD嘉泰姆
Notebook ComputerlmD嘉泰姆
Mother BoardlmD嘉泰姆
LCD Monitor/TVlmD嘉泰姆

四.下载产品资料PDF文档 lmD嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！lmD嘉泰姆

 lmD嘉泰姆

五,产品封装图 (Package)lmD嘉泰姆
lmD嘉泰姆
六.电路原理图lmD嘉泰姆

lmD嘉泰姆
七,功能概述lmD嘉泰姆
Layout ConsiderationlmD嘉泰姆
In any high switching frequency converter, a correct lay-out is important to ensure proper operation of thelmD嘉泰姆
regulator. With power devices switching at 300kHz,the resulting current transient will cause voltage spike acrosslmD嘉泰姆
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transitionlmD嘉泰姆
of the PWM MOSFET. Before turn-off, the MOSFET is car rying the full load current. During turn-off, current stopslmD嘉泰姆
flowing in the MOSFET and is free-wheeling by the lower MOSFET and parasitic diode. Any parasitic inductance oflmD嘉泰姆
the circuit generates a large voltage spike during the switching interval. In general, using short and wide printedlmD嘉泰姆
circuit traces should minimize interconnecting imped-lmD嘉泰姆

Layout Consideration (Cont.)lmD嘉泰姆
ances and the magnitude of voltage spike. And signal and power grounds are to be kept separate till combinedlmD嘉泰姆

using ground plane construction or single point grounding. Figure 8. illustrates the layout, with bold lineslmD嘉泰姆
indicating high current paths; these traces must be short and wide. Components along the bold lines should belmD嘉泰姆

placed lose together. Below is a checklist for your layout:lmD嘉泰姆

- Keep the switching nodes (UGATE, LGATE, and PHASE) away from sensitive small signal nodes since theselmD嘉泰姆

nodes are fast moving signals. Therefore, keep traces to these nodes as short as possible.lmD嘉泰姆

- The traces from the gate drivers to the MOSFETs (UG and LG) should be short and wide.lmD嘉泰姆

- Place the source of the high-side MOSFET and the drain of the low-side MOSFET as close as possible. Minimiz-lmD嘉泰姆
ing the impedance with wide layout plane between the two pads reduces the voltage bounce of the node.lmD嘉泰姆
- Decoupling capacitor, compensation component, the resistor dividers, and boot capacitors should be closelmD嘉泰姆
their pins. (For example, place the decoupling ceramic capacitor near the drain of the high-side MOSFET aslmD嘉泰姆
close as possible. The bulk capacitors are also placed near the drain).lmD嘉泰姆
- The input capacitor should be near the drain of the up-per MOSFET; the output capacitor should be near thelmD嘉泰姆
loads. The input capacitor GND should be close to the output capacitor GND and the lower MOSFET GND.lmD嘉泰姆
- The drain of the MOSFETs (VIN and PHASE nodes) should be a large plane for heat sinking.lmD嘉泰姆
- The ROCSET resistance should be placed near the IC as close as possible.Close to IClmD嘉泰姆
Figure 8. Layout GuidelineslmD嘉泰姆

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