CXMS5222 CXMS5222-N N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

发布时间：2020-04-06 09:43:38 浏览次数：710 作者：嘉泰姆

摘要：CXMS5222 CXMS5222-N N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

CXMS5222M3G Series N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation in a very small outline surface mount package.

产品特点 返回TOPrha嘉泰姆

 30V/5.8A rha嘉泰姆

RDS(ON) =25mΩ@ VGS=10V, ID=5.8A rha嘉泰姆

RDS(ON) =28mΩ@ VGS=4.5V, ID=5A rha嘉泰姆

RDS(ON) =37mΩ@ VGS=2.5V, ID=4A rha嘉泰姆

 High Density Cell Design For Ultra Low On-Resistance rha嘉泰姆

 Subminiature surface mount package:SOT23-3Lrha嘉泰姆

应用范围 返回TOPrha嘉泰姆

 Battery management rha嘉泰姆

 High speed switch rha嘉泰姆

 Low power DC to DC converterrha嘉泰姆

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产品封装图 返回TOPrha嘉泰姆

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MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管)rha嘉泰姆
Part Numberrha嘉泰姆	Moderha嘉泰姆	VDS(Max)rha嘉泰姆	VGSrha嘉泰姆	ID(Max)rha嘉泰姆	RDS(on)rha嘉泰姆	Applicationrha嘉泰姆	Packagerha嘉泰姆
Part Numberrha嘉泰姆	Moderha嘉泰姆	VDS(Max)rha嘉泰姆	VGSrha嘉泰姆	ID(Max)rha嘉泰姆	RDS(on)rha嘉泰姆	Applicationrha嘉泰姆	Packagerha嘉泰姆
CXMS5213rha嘉泰姆	N channelrha嘉泰姆	20Vrha嘉泰姆	12Vrha嘉泰姆	5.2Arha嘉泰姆	37mΩrha嘉泰姆	①②③④⑤⑥⑦⑧rha嘉泰姆	SOT23rha嘉泰姆
CXMS5220rha嘉泰姆	N channelrha嘉泰姆	20Vrha嘉泰姆	8Vrha嘉泰姆	3Arha嘉泰姆	22mΩrha嘉泰姆	①②③④⑤⑥⑦⑧rha嘉泰姆	SOT23/SOT23-3rha嘉泰姆
CXMS5220-Nrha嘉泰姆	N channelrha嘉泰姆	20Vrha嘉泰姆	12Vrha嘉泰姆	5.2Arha嘉泰姆	29mΩrha嘉泰姆	①②③④⑤⑥⑦⑧rha嘉泰姆	SOT23rha嘉泰姆
CXMS5221rha嘉泰姆	Double Nrha嘉泰姆	20Vrha嘉泰姆	12Vrha嘉泰姆	6Arha嘉泰姆	22mΩrha嘉泰姆	①②③④⑤⑥⑦⑧rha嘉泰姆	SOP8rha嘉泰姆
CXMS5222rha嘉泰姆	N channelrha嘉泰姆	30Vrha嘉泰姆	12Vrha嘉泰姆	5.8Arha嘉泰姆	25mΩrha嘉泰姆	①②③④⑤⑥⑦⑧rha嘉泰姆	SOT23/SOT23-3rha嘉泰姆
CXMS5222-Nrha嘉泰姆	N channelrha嘉泰姆	30Vrha嘉泰姆	20Vrha嘉泰姆	4.4Arha嘉泰姆	35mΩrha嘉泰姆	①②③④⑤⑥⑦⑧rha嘉泰姆	SOT23rha嘉泰姆
CXMS5223rha嘉泰姆	Double Nrha嘉泰姆	20Vrha嘉泰姆	12Vrha嘉泰姆	6Arha嘉泰姆	21mΩrha嘉泰姆	①②③④⑤</span>rha嘉泰姆	SOT23-6/ TSSOP8rha嘉泰姆
CXMS5224rha嘉泰姆	Double Nrha嘉泰姆	20Vrha嘉泰姆	12Vrha嘉泰姆	5Arha嘉泰姆	19mΩrha嘉泰姆	①②③④⑤⑥⑦⑧rha嘉泰姆	TSSOP8/SOT26rha嘉泰姆
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protectionrha嘉泰姆

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上一篇： CXMS5219SG Series Dual P-channel enhancement mode field-effect transistor, produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

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CXMS5222 CXMS5222-N N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

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CXMS5222 CXMS5222-N N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

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