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旧闻博览

<font color='FF4B0A'>This device is suitable for use in DC-DC conversion, power switch and charging circuit CXMS5181 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design t</font>

This device is suitable for use in DC-DC conversion, power switch and charging circuit CXMS5181 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design t

This device is suitable for use in DC-DC conversion, power switch and charging circuit CXMS5181 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design t

2020-04-06 09:43:38

<font color='FF4B0A'>CX01N11 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge</font>

CX01N11 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

CX01N11 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>The JTMD2078 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use i</font>

The JTMD2078 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use i

The JTMD2078 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use i

2020-04-06 09:43:38

<font color='FF4B0A'>600V N-Channel Super Junction MOSFET CX470N60T CX470N60TF series is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism</font>

600V N-Channel Super Junction MOSFET CX470N60T CX470N60TF series is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism

600V N-Channel Super Junction MOSFET CX470N60T CX470N60TF series is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism

2020-04-06 09:43:38

<font color='FF4B0A'>CX380N60T CX380N60TF CX380N60TG generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and 600V N-Channel Super Junction</font>

CX380N60T CX380N60TF CX380N60TG generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and 600V N-Channel Super Junction

CX380N60T CX380N60TF CX380N60TG generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and 600V N-Channel Super Junction

2020-04-06 09:43:38

<font color='FF4B0A'>Dual N-Channel, 20V, 6A, Power MOSFET The JTMD2178 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the M</font>

Dual N-Channel, 20V, 6A, Power MOSFET The JTMD2178 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the M

Dual N-Channel, 20V, 6A, Power MOSFET The JTMD2178 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the M

2020-04-06 09:43:38

<font color='FF4B0A'>Single N-Channel, 100V, 1.7A, Power MOSFET The CX01N10 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate</font>

Single N-Channel, 100V, 1.7A, Power MOSFET The CX01N10 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

Single N-Channel, 100V, 1.7A, Power MOSFET The CX01N10 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

2020-04-06 09:43:38

<font color='FF4B0A'>Dual P-Channel, -20V, -3A, Power MOSFET The JTMD2076 is the Dual P-Channel logic mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density p</font>

Dual P-Channel, -20V, -3A, Power MOSFET The JTMD2076 is the Dual P-Channel logic mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density p

Dual P-Channel, -20V, -3A, Power MOSFET The JTMD2076 is the Dual P-Channel logic mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density p

2020-04-06 09:43:38

<font color='FF4B0A'>Dual N-Channel, 20V, 11A, Power MOSFET CXMS5168 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate c</font>

Dual N-Channel, 20V, 11A, Power MOSFET CXMS5168 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate c

Dual N-Channel, 20V, 11A, Power MOSFET CXMS5168 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate c

2020-04-06 09:43:38

<font color='FF4B0A'>CXMS5117 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-</font>

CXMS5117 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-

CXMS5117 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-

2020-04-06 09:43:38

<font color='FF4B0A'>CXMS5124 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in sma</font>

CXMS5124 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in sma

CXMS5124 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in sma

2020-04-06 09:43:38

<font color='FF4B0A'>This device is suitable for use in DC-DC conversion, power switch and charging circuit, CXMS5160 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to</font>

This device is suitable for use in DC-DC conversion, power switch and charging circuit, CXMS5160 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to

This device is suitable for use in DC-DC conversion, power switch and charging circuit, CXMS5160 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to

2020-04-06 09:43:38

<font color='FF4B0A'>CXMS5159 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-</font>

CXMS5159 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-

CXMS5159 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-

2020-04-06 09:43:38

<font color='FF4B0A'>Power MOSFET and Schottky Diode CXMS5157,Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design Ultra Low VF Schottky</font>

Power MOSFET and Schottky Diode CXMS5157,Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design Ultra Low VF Schottky

Power MOSFET and Schottky Diode CXMS5157,Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design Ultra Low VF Schottky

2020-04-06 09:43:38

<font color='FF4B0A'>Power MOSFET and Schottky Diode CXMS5156 CXMS5156B Featuring a MOSFET and Schottky Diode , Independent Pinout to each Device to Ease Circuit Design</font>

Power MOSFET and Schottky Diode CXMS5156 CXMS5156B Featuring a MOSFET and Schottky Diode , Independent Pinout to each Device to Ease Circuit Design

Power MOSFET and Schottky Diode CXMS5156 CXMS5156B Featuring a MOSFET and Schottky Diode , Independent Pinout to each Device to Ease Circuit Design

2020-04-06 09:43:38

<font color='FF4B0A'>The CXMS5155 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.</font>

The CXMS5155 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

The CXMS5155 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

2020-04-06 09:43:38

<font color='FF4B0A'>JTBM1621是一种128点阵式存储器映射多功能LCD驱动电路。JTBM1621 的 S/W 结构特点，使它适合点阵式 LCD 显示，包括LCD模块和显示子系统，JTBM1621具有关闭电源功能</font>

JTBM1621是一种128点阵式存储器映射多功能LCD驱动电路。JTBM1621 的 S/W 结构特点，使它适合点阵式 LCD 显示，包括LCD模块和显示子系统，JTBM1621具有关闭电源功能

JTBM1621是一种128点阵式存储器映射多功能LCD驱动电路。JTBM1621 的 S/W 结构特点，使它适合点阵式 LCD 显示，包括LCD模块和显示子系统，JTBM1621具有关闭电源功能

2020-04-06 09:43:38

<font color='FF4B0A'>CXLD6402A series of adjustable and fixed voltage regulators are designed to provide 1A output current and to operate down to 2.3V input-to-output differential. The input volage can up to +35V maxi</font>

CXLD6402A series of adjustable and fixed voltage regulators are designed to provide 1A output current and to operate down to 2.3V input-to-output differential. The input volage can up to +35V maxi

CXLD6402A series of adjustable and fixed voltage regulators are designed to provide 1A output current and to operate down to 2.3V input-to-output differential. The input volage can up to +35V maxi

2020-04-06 09:43:38

<font color='FF4B0A'>The CXLD6403 series of adjustable and fixed voltage regulators are designed to provide 5A output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is gu</font>

The CXLD6403 series of adjustable and fixed voltage regulators are designed to provide 5A output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is gu

The CXLD6403 series of adjustable and fixed voltage regulators are designed to provide 5A output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is gu

2020-04-06 09:43:38

<font color='FF4B0A'>CXLD6404 family is a positive voltage linear low dropout regulator developed utilizing CMOS technology featured low quiescent current (50μA typ.), low dropout voltage, and high output voltage accu</font>

CXLD6404 family is a positive voltage linear low dropout regulator developed utilizing CMOS technology featured low quiescent current (50μA typ.), low dropout voltage, and high output voltage accu

CXLD6404 family is a positive voltage linear low dropout regulator developed utilizing CMOS technology featured low quiescent current (50μA typ.), low dropout voltage, and high output voltage accu

2020-04-06 09:43:38

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