旧闻博览

旧闻博览

<font color='FF4B0A'>CXLD6405 family of a linear voltage linear regulators developed utilizing JTBM unique BiCMOS technology featured low quiescent current (90uA), low dropout voltage, high output voltage accuracy. Th</font>

CXLD6405 family of a linear voltage linear regulators developed utilizing JTBM unique BiCMOS technology featured low quiescent current (90uA), low dropout voltage, high output voltage accuracy. Th

CXLD6405 family of a linear voltage linear regulators developed utilizing JTBM unique BiCMOS technology featured low quiescent current (90uA), low dropout voltage, high output voltage accuracy. Th

2020-04-06 09:43:38

<font color='FF4B0A'>CXLD6406 series are high performance linear voltage regulators that provide ultra low-dropout voltage, high output current in lowest output voltage. It operates from an input of 1.4V to 5.5V and p</font>

CXLD6406 series are high performance linear voltage regulators that provide ultra low-dropout voltage, high output current in lowest output voltage. It operates from an input of 1.4V to 5.5V and p

CXLD6406 series are high performance linear voltage regulators that provide ultra low-dropout voltage, high output current in lowest output voltage. It operates from an input of 1.4V to 5.5V and p

2020-04-06 09:43:38

<font color='FF4B0A'>250mA CMOS LDO CXLD6407,Built-in low on-resistance transistor provides low dropout voltage and large output current. A 1.0μF or greater can be used as an output capacitor,These robust devices are des</font>

250mA CMOS LDO CXLD6407,Built-in low on-resistance transistor provides low dropout voltage and large output current. A 1.0μF or greater can be used as an output capacitor,These robust devices are des

250mA CMOS LDO CXLD6407,Built-in low on-resistance transistor provides low dropout voltage and large output current. A 1.0μF or greater can be used as an output capacitor,These robust devices are desi

2020-04-06 09:43:38

<font color='FF4B0A'>CXLD6408 is stable with an output capacitance of 1.0μ F or greater,300mA CMOS LDO WITH ENABLE CXLD6408,a positive voltage linear regulator developed utilizing CMOS technology featured low quiescen</font>

CXLD6408 is stable with an output capacitance of 1.0μ F or greater,300mA CMOS LDO WITH ENABLE CXLD6408,a positive voltage linear regulator developed utilizing CMOS technology featured low quiescen

CXLD6408 is stable with an output capacitance of 1.0μ F or greater,300mA CMOS LDO WITH ENABLE CXLD6408,a positive voltage linear regulator developed utilizing CMOS technology featured low quiescen

2020-04-06 09:43:38

<font color='FF4B0A'>The CX75XX series is a set of three-terminal high current low voltage regulator implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 18V</font>

The CX75XX series is a set of three-terminal high current low voltage regulator implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 18V

The CX75XX series is a set of three-terminal high current low voltage regulator implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 18V

2020-04-06 09:43:38

<font color='FF4B0A'>CXLD6409系列是一组CMOS 技术实现的三端低功耗高电压稳压器。输出电流为100mA且允许的输入电压可高达40V.具有几个固定的输出电压，范围从2.1V到12.0V。CMOS 技术可确保其具有低压降和低静态电流的特性.尽管主要为固定</font>

CXLD6409系列是一组CMOS 技术实现的三端低功耗高电压稳压器。输出电流为100mA且允许的输入电压可高达40V.具有几个固定的输出电压，范围从2.1V到12.0V。CMOS 技术可确保其具有低压降和低静态电流的特性.尽管主要为固定

CXLD6409系列是一组CMOS 技术实现的三端低功耗高电压稳压器。输出电流为100mA且允许的输入电压可高达40V.具有几个固定的输出电压，范围从2.1V到12.0V。CMOS 技术可确保其具有低压降和低静态电流的特性.尽管主要为固定电压调节器而设计，但这IC可与外部元件结合来获得可变的电压和电流

2020-04-06 09:43:38

<font color='FF4B0A'>CXDC6584 ,降压PWM控制器，SOP8封装，M OS外挂；高耐压到+90V输入，0.8V的基准,完善的短路保护电路；支持低压输入（+12V~24V），6-8A大电流输出；支持高压输入（+75V~48V），完美支持1.5A输出</font>

CXDC6584 ,降压PWM控制器，SOP8封装，M OS外挂；高耐压到+90V输入，0.8V的基准,完善的短路保护电路；支持低压输入（+12V~24V），6-8A大电流输出；支持高压输入（+75V~48V），完美支持1.5A输出

CXDC6584 ,降压PWM控制器，SOP8封装，M OS外挂；高耐压到+90V输入，0.8V的基准,完善的短路保护电路；支持低压输入（+12V~24V），6-8A大电流输出；支持高压输入（+75V~48V），完美支持1.5A输出

2020-04-06 09:43:38

<font color='FF4B0A'>CXMS5166 CXMS5166B is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.</font>

CXMS5166 CXMS5166B is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

CXMS5166 CXMS5166B is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

2020-04-06 09:43:38

<font color='FF4B0A'>CX07N65 CX07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is</font>

CX07N65 CX07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is

CX07N65 CX07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is

2020-04-06 09:43:38

<font color='FF4B0A'>Single N-Channel, 20V, A, Power MOSFET CXMS5116 This device is suitable for use in DC-DC conversion, power switch and charging circuit, N-Channel enhancement MOS Field Effect Transistor. Uses advanced</font>

Single N-Channel, 20V, A, Power MOSFET CXMS5116 This device is suitable for use in DC-DC conversion, power switch and charging circuit, N-Channel enhancement MOS Field Effect Transistor. Uses advanced

Single N-Channel, 20V, A, Power MOSFET CXMS5116 This device is suitable for use in DC-DC conversion, power switch and charging circuit, N-Channel enhancement MOS Field Effect Transistor. Uses advanced

2020-04-06 09:43:38

<font color='FF4B0A'>CXMS5115 CXMS5115B is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design This device is suitable for use in DC-DC conversion,</font>

CXMS5115 CXMS5115B is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design This device is suitable for use in DC-DC conversion,

CXMS5115 CXMS5115B is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design This device is suitable for use in DC-DC conversion,

2020-04-06 09:43:38

<font color='FF4B0A'>650V N-Channel MOSFET The CX12N65 CX12N65F is N-Channel enhancement MOS Field Effect Transis Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge</font>

650V N-Channel MOSFET The CX12N65 CX12N65F is N-Channel enhancement MOS Field Effect Transis Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge

650V N-Channel MOSFET The CX12N65 CX12N65F is N-Channel enhancement MOS Field Effect Transis Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>CX07N60 CX07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge</font>

CX07N60 CX07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge

CX07N60 CX07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>60V, 0.30A, Power MOSFET CXMS5130 Uses advanced trench technology and design to provide excellent RDS (ON) with This device is suitable for use in DC-DC conversion, power switch and charging circuit</font>

60V, 0.30A, Power MOSFET CXMS5130 Uses advanced trench technology and design to provide excellent RDS (ON) with This device is suitable for use in DC-DC conversion, power switch and charging circuit

60V, 0.30A, Power MOSFET CXMS5130 Uses advanced trench technology and design to provide excellent RDS (ON) with This device is suitable for use in DC-DC conversion, power switch and charging circuit

2020-04-06 09:43:38

<font color='FF4B0A'>Single P-Channel, -30V, -4.1A, Power MOSFET CXMS5173,Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge</font>

Single P-Channel, -30V, -4.1A, Power MOSFET CXMS5173,Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

Single P-Channel, -30V, -4.1A, Power MOSFET CXMS5173,Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>N-Channel, 30V, 6.2A, Power MOSFET CXMS5122,This device is suitable for use in DC-DC conversion</font>

N-Channel, 30V, 6.2A, Power MOSFET CXMS5122,This device is suitable for use in DC-DC conversion

N-Channel, 30V, 6.2A, Power MOSFET CXMS5122,This device is suitable for use in DC-DC conversion

2020-04-06 09:43:38

<font color='FF4B0A'>Dual N-Channel, 20V, 2.6A, Power MOSFET CXMS5145,N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge</font>

Dual N-Channel, 20V, 2.6A, Power MOSFET CXMS5145,N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

Dual N-Channel, 20V, 2.6A, Power MOSFET CXMS5145,N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge

2020-04-06 09:43:38

<font color='FF4B0A'>JTBM78XX regulators employ internal current-limiting and thermal-shutdown, making them essentially indestructible. They can deliver up to 1000mA output JTBM7805 can continuously output 1.0A when +8V</font>

JTBM78XX regulators employ internal current-limiting and thermal-shutdown, making them essentially indestructible. They can deliver up to 1000mA output JTBM7805 can continuously output 1.0A when +8V

JTBM78XX regulators employ internal current-limiting and thermal-shutdown, making them essentially indestructible. They can deliver up to 1000mA output JTBM7805 can continuously output 1.0A when +8V

2020-04-06 09:43:38

<font color='FF4B0A'>CXDR7538 CXDR7539 ICs are three-terminal adjustable shunt regulators with guaranteed thermal stability over a full operation range. These ICs feature sharp turn-on characteristics, low temperature co</font>

CXDR7538 CXDR7539 ICs are three-terminal adjustable shunt regulators with guaranteed thermal stability over a full operation range. These ICs feature sharp turn-on characteristics, low temperature co

CXDR7538 CXDR7539 ICs are three-terminal adjustable shunt regulators with guaranteed thermal stability over a full operation range. These ICs feature sharp turn-on characteristics, low temperature co

2020-04-06 09:43:38

<font color='FF4B0A'>CXDR7540 is integrated circuit is a high gain, high output current, high output voltage swing dual operational amplifier capable of driving 100mA, good for earphone output driver.</font>

CXDR7540 is integrated circuit is a high gain, high output current, high output voltage swing dual operational amplifier capable of driving 100mA, good for earphone output driver.

CXDR7540 is integrated circuit is a high gain, high output current, high output voltage swing dual operational amplifier capable of driving 100mA, good for earphone output driver.

2020-04-06 09:43:38

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