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旧闻博览

<font color='FF4B0A'>CXMS5222 CXMS5222-N N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance</font>

CXMS5222 CXMS5222-N N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

CXMS5222 CXMS5222-N N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

2020-04-06 09:43:38

<font color='FF4B0A'>CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance</font>

CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

CXMS5224 Dual N-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance

2020-04-06 09:43:38

<font color='FF4B0A'>Constant Voltage and Constant Current controller CXAC8520A CXAC8520B CXAC8520C CXAC8521-5 highly integrated solution for a constant voltage/constant current mode SMPS application</font>

Constant Voltage and Constant Current controller CXAC8520A CXAC8520B CXAC8520C CXAC8521-5 highly integrated solution for a constant voltage/constant current mode SMPS application

Constant Voltage and Constant Current controller CXAC8520A CXAC8520B CXAC8520C CXAC8521-5 highly integrated solution for a constant voltage/constant current mode SMPS application

2020-04-06 09:43:38

<font color='FF4B0A'>CXLD6443三端积极的监管机构。这些监管机构可以提供输出电流1.2。监管机构的内部限制和热关机特性让它们基本上不会过载。当用作替代一个齐纳二极管电阻梳子——暗杀,可以获得一个有效的改善输出阻抗,加上低静态电流</font>

CXLD6443三端积极的监管机构。这些监管机构可以提供输出电流1.2。监管机构的内部限制和热关机特性让它们基本上不会过载。当用作替代一个齐纳二极管电阻梳子——暗杀,可以获得一个有效的改善输出阻抗,加上低静态电流

CXLD6443三端积极的监管机构。这些监管机构可以提供输出电流1.2。监管机构的内部限制和热关机特性让它们基本上不会过载。当用作替代一个齐纳二极管电阻梳子——暗杀,可以获得一个有效的改善输出阻抗,加上低静态电流

2020-04-06 09:43:38

<font color='FF4B0A'>CXLD78M05三端积极的监管机构。这些监管机构可以提供输出电流500mA。监管机构的内部限制和热关机特性让它们基本上不会过载。当用作替代一个齐纳二极管电阻梳子——暗杀,可以获得一个有效的改善输出阻抗,加上低静态电</font>

CXLD78M05三端积极的监管机构。这些监管机构可以提供输出电流500mA。监管机构的内部限制和热关机特性让它们基本上不会过载。当用作替代一个齐纳二极管电阻梳子——暗杀,可以获得一个有效的改善输出阻抗,加上低静态电

CXLD78M05三端积极的监管机构。这些监管机构可以提供输出电流500mA。监管机构的内部限制和热关机特性让它们基本上不会过载。当用作替代一个齐纳二极管电阻梳子——暗杀,可以获得一个有效的改善输出阻抗,加上低静态电流

2020-04-06 09:43:38

<font color='FF4B0A'>CXLD78L05三端积极的监管机构。这些监管机构可以提供输出电流100mA。监管机构的内部限制和热关机特性让它们基本上不会过载。当用作替代一个齐纳二极管电阻梳子——暗杀,可以获得一个有效的改善输出阻抗,加上低静态电</font>

CXLD78L05三端积极的监管机构。这些监管机构可以提供输出电流100mA。监管机构的内部限制和热关机特性让它们基本上不会过载。当用作替代一个齐纳二极管电阻梳子——暗杀,可以获得一个有效的改善输出阻抗,加上低静态电

CXLD78L05三端积极的监管机构。这些监管机构可以提供输出电流100mA。监管机构的内部限制和热关机特性让它们基本上不会过载。当用作替代一个齐纳二极管电阻梳子——暗杀,可以获得一个有效的改善输出阻抗,加上低静态电流

2020-04-06 09:43:38

<font color='FF4B0A'>单P沟道低压MOS场效应管</font>

单P沟道低压MOS场效应管

单P沟道低压MOS场效应管

2020-04-06 09:43:38

<font color='FF4B0A'>SOT-23 Plastic-Encapsulate MOSFETs BSS84 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry</font>

SOT-23 Plastic-Encapsulate MOSFETs BSS84 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry

SOT-23 Plastic-Encapsulate MOSFETs BSS84 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry

2020-04-06 09:43:38

<font color='FF4B0A'>DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS CX08P12D ,Advanced trench MOSFET process technology</font>

DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS CX08P12D ,Advanced trench MOSFET process technology

DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS CX08P12D ,Advanced trench MOSFET process technology

2020-04-06 09:43:38

<font color='FF4B0A'>P-Channel Enhancement Mode Power MOSFET CX16P12D，advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages</font>

P-Channel Enhancement Mode Power MOSFET CX16P12D，advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages

P-Channel Enhancement Mode Power MOSFET CX16P12D，advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages

2020-04-06 09:43:38

<font color='FF4B0A'>P-Channel 20V (D-S) MOSFET CXCP5367BKR/BSR/BJR,the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology</font>

P-Channel 20V (D-S) MOSFET CXCP5367BKR/BSR/BJR,the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

P-Channel 20V (D-S) MOSFET CXCP5367BKR/BSR/BJR,the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

2020-04-06 09:43:38

<font color='FF4B0A'>P-Channel Trench Power MOSFET CXCP5367C advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V</font>

P-Channel Trench Power MOSFET CXCP5367C advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V

P-Channel Trench Power MOSFET CXCP5367C advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V

2020-04-06 09:43:38

<font color='FF4B0A'>P-Channel 20V (D-S) MOSFET CXCP5367D P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology</font>

P-Channel 20V (D-S) MOSFET CXCP5367D P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

P-Channel 20V (D-S) MOSFET CXCP5367D P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology

2020-04-06 09:43:38

<font color='FF4B0A'>P-Channel 20V (D-S) MOSFET CXCP5367DR This high density process is especially tailored to minimize on-state resistance</font>

P-Channel 20V (D-S) MOSFET CXCP5367DR This high density process is especially tailored to minimize on-state resistance

P-Channel 20V (D-S) MOSFET CXCP5367DR This high density process is especially tailored to minimize on-state resistance

2020-04-06 09:43:38

<font color='FF4B0A'>CXCP5367E P-Channel Trench Power MOSFET advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V.</font>

CXCP5367E P-Channel Trench Power MOSFET advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V.

CXCP5367E P-Channel Trench Power MOSFET advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V.

2020-04-06 09:43:38

<font color='FF4B0A'>P-Channel Enhancement Mode Power MOSFET CXCP5367KR low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.</font>

P-Channel Enhancement Mode Power MOSFET CXCP5367KR low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

P-Channel Enhancement Mode Power MOSFET CXCP5367KR low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

2020-04-06 09:43:38

<font color='FF4B0A'>P-Channel Enhancement Mode Power MOSFET CXCP5371PR This device is suitable for use as a load switch or in PWM applications</font>

P-Channel Enhancement Mode Power MOSFET CXCP5371PR This device is suitable for use as a load switch or in PWM applications

P-Channel Enhancement Mode Power MOSFET CXCP5371PR This device is suitable for use as a load switch or in PWM applications

2020-04-06 09:43:38

<font color='FF4B0A'>P-Channel Enhancement Mode Power MOSFET CXCP5385 advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.</font>

P-Channel Enhancement Mode Power MOSFET CXCP5385 advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.

P-Channel Enhancement Mode Power MOSFET CXCP5385 advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.

2020-04-06 09:43:38

<font color='FF4B0A'>P-Channel Enhancement Mode Power MOSFET CXCP5390 CXCP5390B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current loa</font>

P-Channel Enhancement Mode Power MOSFET CXCP5390 CXCP5390B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current loa

P-Channel Enhancement Mode Power MOSFET CXCP5390 CXCP5390B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current loa

2020-04-06 09:43:38

<font color='FF4B0A'>P-Channel Enhancement Mode Power MOSFET CXCP5380 advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load</font>

P-Channel Enhancement Mode Power MOSFET CXCP5380 advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load

P-Channel Enhancement Mode Power MOSFET CXCP5380 advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load

2020-04-06 09:43:38

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