中文
EnglishThe JTM4410B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
摘要：The JTM4410B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
目录
一,产品概述(General Description) 
The JTM4410B uses advanced trench technology and design to provide
excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
二</span>.产品特点(Features)
● VDS =30V,ID =12A
RDS(ON) < 11mΩ @ VGS=10V
RDS(ON) < 13mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
三</span>,应用范围 (Applications)
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
四.技术</span>规格书下载（产品PDF）</span>
 | JTM4410B |
五,产品封装图 (Package)
六.电路原理图</span>
七</span>,功能概述
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V ID=250μA | 30 | 33 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 1 | 1.8 | 3 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=12A | - | 9 | 11 | mΩ |
| VGS=4.5V, ID=5A | - | 11 | 13 | |||
| Forward Transconductance | ||||||
| gFS | VDS=5V,ID=12A | 15 | - | - | S | |
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | VDS=15V,VGS=0V, F=1.0MHz | - | 1550 | - | PF |
| Output Capacitance | Coss | - | 300 | - | PF | |
| Reverse Transfer Capacitance | Crss | - | 180 | - | PF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=25V,ID=1A VGS=10V,RGEN=6Ω | - | 30 | - | nS |
| Turn-on Rise Time | tr | - | 20 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 100 | - | nS | |
| Turn-Off Fall Time | tf | - | 80 | - | nS | |
| Total Gate Charge | Qg | VDS=15V,ID=12A, VGS=5V | - | 13 | - | nC |
| Gate-Source Charge | Qgs | - | 5.5 | - | nC | |
| Gate-Drain Charge | Qgd | - | 3.5 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=12A | - | - | 1.2 | V |
| Diode Forward Current (Note 2) | IS | - | - | 12 | A | |
八,相关芯片选择指南
| N沟道中压大<a href="http://www.jtm-ic.com/a/xinwenzhongxin/" target="_blank" style="padding: 0px; margin: 0px; color: rgb(37, 110, 177); text-decoration: none;">电流MOS | |||||||||
| 型号 | 沟道 | VDS | VGS | VTH | ID | IDM | RDS(on) | 封装 | 状态 |
| (Max) | (Max) | (Max) | |||||||
| JTM20N03K | N沟道 | 30V | 20V | 3.0V | 20A | 60A | 16mΩ | TO-252 | 量产 |
| JTM35N03D | N沟道 | 30V | 20V | 1.5V | 35A | 120A | 5.5mΩ | DFN5*6-8 | 量产 |
| JTM50N03/K/I | N沟道 | 30V | 20V | 3.0V | 50A | 140A | 8mΩ | TO-220 | 量产 |
| TO-252 | |||||||||
| TO-251 | |||||||||
| JTM80N03/K/I | N沟道 | 30V | 20V | 3.0V | 80A | 170A | 5.5mΩ | TO-220 | 量产 |
| TO-252 | |||||||||
| TO-251 | |||||||||
| JTM120N03/K | N沟道 | 30V | 20V | 3.0V | 120A | 400A | 3.0mΩ | TO-220 | 量产 |
| TO-252 | |||||||||
| JTM150N03K | N沟道 | 30V | 20V | 1.7V | 150A | 600A | 4.0mΩ | TO-252 | 量产 |
| JTM60N04/K | N沟道 | 40V | 20V | 2.5V | 60A | 200A | 7.3mΩ | TO-220 | 量产 |
| TO-252 | |||||||||
| JTM80N04/K | N沟道 | 40V | 20V | 2.5V | 80A | 350A | 5.3mΩ | TO-220 | 量产 |
| TO-252 | |||||||||
| JTM120N04K | N沟道 | 40V | 20V | 1.8V | 120A | 330A | 3.6mΩ | TO-252 | 量产 |
| JTM1404 | N沟道 | 40V | 20V | 3.0V | 200A | 790A | 3.3mΩ | TO-220 | 量产 |
| JTM1404B | N沟道 | 40V | 20V | 3.0V | 130A | 300A | 3..2mΩ | TO-220 | 量产 |
| JTM3205 | N沟道 | 55V | 20V | 3.0V | 120A | 420A | 4.1mΩ | TO-220 | 量产 |
| JTM20N06/K | N沟道 | 60V | 20V | 3.0V | 20A | 60A | 37mΩ | TO-220 | 量产 |
| TO-252 | |||||||||
| JTM50N06/K | N沟道 | 60V | 20V | 3.0V | 50A | 220A | 17mΩ | TO-220 | 量产 |
| TO-252 | |||||||||
| JTM75N06/K | N沟道 | 60V | 20V | 4.0V | 75A | 310A | 6.8mΩ | TO-220 | 量产 |
| TO-252 | |||||||||
| JTM3305/D | N沟道 | 60V | 20V | 4.0V | 150A | 600A | 4.5mΩ | TO-220 | 量产 |
| TO-263 | |||||||||
| JTM3306 | N沟道 | 60V | 25V | 4.0V | 180A | 720A | 3.5mΩ | TO-220 | 量产 |
| JTM70N80 | N沟道 | 68V | 25V | 4.0V | 80A | 300A | 9.0mΩ | TO-220 | 量产 |
| JTM70N75 | N沟道 | 70V | 25V | 4.0V | 75A | 300A | 6.9mΩ | TO-220 | 量产 |
| JTM70N78 | N沟道 | 70V | 25V | 4.0V | 78A | 310A | 5.8mΩ | TO-220 | 量产 |
| JTM70N80A | N沟道 | 70V | 25V | 4.0V | 80A | 320A | 5.5mΩ | TO-220 | 量产 |
| JTM70N88 | N沟道 | 70V | 25V | 4.0V | 88A | 320A | 4.8mΩ | TO-220 | 量产 |
| JTM71N90 | N沟道 | 71V | 20V | 4.0V | 90A | 320A | 5.9mΩ | TO-220 | 量产 |
| JTM75N80/D | N沟道 | 75V | 25V | 4.0V | 80A | 320A | 6.5mΩ | TO-220 | 量产 |
| TO-263 | |||||||||
| JTM1607 | N沟道 | 75V | 25V | 4.0V | 150A | 600A | 5.0mΩ | TO-220 | 量产 |
| JTM3207B | N沟道 | 70V | 25V | 4.0V | 180A | 720A | 2.7mΩ | TO-220 | 量产 |
| JTM3207/D | N沟道 | 75V | 20V | 4.0V | 210A | 840A | 2.9mΩ | TO-220 | 量产 |
| TO-263 | |||||||||
| JTM80N70 | N沟道 | 80V | 25V | 4.0V | 66A | 240A | 10mΩ | TO-220 | 量产 |
| JTM3307/D | N沟道 | 80V | 25V | 4.0V | 110A | 400A | 7mΩ | TO-220 | 量产 |
| TO-263 | |||||||||
| JTM3808 | N沟道 | 80V | 25V | 4.0V | 150A | 600A | 3.6mΩ | TO-220 | 量产 |
| JTM2907 | N沟道 | 80V | 25V | 4.0V | 180A | 750A | 3mΩ | TO-220 | 量产 |
| JTM85N80 | N沟道 | 85V | 20V | 4.0V | 80A | 320A | 6.8mΩ | TO-220 | 量产 |
| JTM85N90 | N沟道 | 85V | 20V | 4.0V | 90A | 320A | 7.5mΩ | TO-220 | 量产 |
| JTM3077 | N沟道 | 85V | 20V | 3.2V | 3.2V | 210A | 3.6mΩ | TO-220 | 量产 |
| JTM530 | N沟道 | 100V | 20V | 4V | 17A | 60A | 70mΩ | TO-220 | 量产 |
| JTM3710 | N沟道 | 100V | 20V | 4.0V | 57A | 190A | 12mΩ | TO-220 | 量产 |
| JTM73N10 | N沟道 | 100V | 25V | 4.0V | 73A | 290A | 10mΩ | TO-220 | 量产 |
| JTM2807 | N沟道 | 100V | 20V | 4.0V | 100A | 380A | 9.9mΩ | TO-220 | 量产 |
| JTM4030 | N沟道 | 100V | 25V | 4.0V | 118A | 472A | 6.8mΩ | TO-220 | 量产 |
| JTM4310 | N沟道 | 100V | 25V | 4.0V | 140A | 560A | 6.2mΩ | TO-220 | 量产 |
| JTM4110 | N沟道 | 100V | 25V | 4.0V | 170A | 680A | 4.5mΩ | TO-220 | 量产 |
| JTM6N10/R | N沟道 | 100V | 20V | 2.5V | 6.0A | 24A | 110mΩ | T0-92 | 量产 |
| SOT-223 | |||||||||
| JTM10N10K/I | N沟道 | 100V | 20V | 4.0V | 9.6A | 58A | 105mΩ | TO-252 | 量产 |
| TO-251 | |||||||||
| JTM17N10K | N沟道 | 100V | 20V | 2.5V | 17A | 65A | 56mΩ | TO-252 | 量产 |
| JTM25N10K | N沟道 | 100V | 20V | 4.0V | 25A | 75A | 33mΩ | TO-252 | 量产 |
| JTM40N10/K | N沟道 | 100V | 20V | 4.0V | 40A | 160A | 14mΩ | TO-220 | 量产 |
| TO-252 | |||||||||
| JTM40N15K | N沟道 | 150V | 20V | 4.5V | 40A | 164A | 35mΩ | TO-252 | 量产 |
| JTM50N15 | N沟道 | 150V | 20V | 4.5V | 50A | 210A | 19.5mΩ | TO-220 | 量产 |
| JTM2N20/R | N沟道 | 200V | 20V | 4.5V | 2.0A | 8A | 520mΩ | TO-92 | 量产 |
| SOT-223 | |||||||||
| JTM8N20/K | N沟道 | 200V | 20V | 4.0V | 8A | 20A | 260mΩ | TO-220 | 量产 |
| TO-252 | |||||||||
| JTM24N20/K | N沟道 | 200V | 20V | 4.0V | 24A | 100A | 63mΩ | TO-220 | 量产 |
| TO-252 | |||||||||
| JTM40N20 | N沟道 | 200V | 20V | 4.0V | 40A | 160A | 36.5mΩ | TO-220 | 量产 |
| 备注：</td> | |||||||||
| 1. 标注的Id电流是MOS芯片的最大常态电流，实际使用时的最大常态电流还要受封装的最大电流限制。因此客户设计产品时的最大使用电流设定要考虑封装的最大电流限制。建议客户设计产品时的最大使用电流设定更重要的是要考虑MOS的内阻参数。</td> | |||||||||
| 2. 建议在MOS的栅源（G/S）极之间并一个电阻（10K）和一个稳压二极管(5V-12V)起到保护栅源（G/S）极过压的作用。</td> | |||||||||
| 3.建议MOS管的开启电压尽量提高，这样MOS管才能充分开启导通，这个时候内阻最小，不容易发烫。一般建议低压MOS的VGS开启电压设定为4.5V以上，中高压MOS的开启电压设定为10V以上. | |||||||||
| 4.MOS 电路操作注意事项：</td> | |||||||||
| 静电在很多地方都会产生，采取下面的预防措施，可以有效防止MOS 电路由于受静电放电影响而引起的损坏：</td> | |||||||||
| • 操作人员要通过防静电腕带接地。</td> | |||||||||
| • 设备外壳必须接地。</td> | |||||||||
| • 装配过程中使用的工具必须接地。</td> | |||||||||
| • 必须采用导体包装或抗静电材料包装或运输</td> | |||||||||
| 我司的JTM75N80/JTM71N90/JTM85N80/JTM85N90/JTM70N80/JTM80N70/JTM2807/JTM3710/JTM3205/JTM3207/JTM1404/JTM50N06/ | |||||||||
| JTM50N03/JTM80N03/JTM10N10/JTM17N10/JTM25N10等中压大电流MOS的<a href="http://www.jtm-ic.com/a/xinwenzhongxin/xinpinjishu/" target="_blank" style="padding: 0px; margin: 0px; color: rgb(37, 110, 177); text-decoration: none;">优点：</td> | |||||||||
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