中文
English场效应晶体管 P沟道MOS管
场效应晶体管 P沟道MOS管</span> | |||||||||
Product | Polarity | Channel | VDS | VGS | VGS(th) | RDS(ON)@VGS=4.5V | ID@TA=25oC | Package | Size |
(Max.) | (Max.) | (Max.) | (Typ.) | (MAX.) | |||||
(V) | (V) | (V) | (Ω) | (A) | (mm)(L×W) | ||||
P | 1 | -20 | ±8 | -1 | 0.11 | -1.4 | SOT-323 | 2.1 x 2.3 | |
P | 1 | -12 | ±12 | -0.9 | 0.022 | -5.1 | DFN2020-6L | 2.0 x 2.0 | |
P | 1 | -12 | ±8 | -0.9 | 0.031 | -3.5 | SOT-23 | 2.9 x 2.4 | |
P | 1 | -12 | ±8 | -1 | 0.015 | -7.4 | DFN2020-6L | 2.0 x 2.0 | |
P | 1 | -12 | ±8 | -0.9 | 0.08 | -1.5 | SOT-323 | 2.1 x 2.3 | |
P+Diode | 1 | -20 | ±8 | -0.8 | - | -2.9 | DFN3020-8L | 3.0 x 2.0 | |
P+Diode | 1 | -20 | ±8 | -0.8 | - | -2.7 | DFN3020-8L | 3.0 x 2.0 | |
P+Diode | 1 | -20 | ±8 | -1 | 0.09 | -3 | DFN2020-6L | 2.0 x 2.0 | |
P | 1 | -20 | ±12 | -1 | 0.042 | -4 | DFN3030-8L | 3.0 x 3.0 | |
P | 1 | -20 | ±8 | -0.9 | 0.05 | -4.1 | DFN2020-6L | 2.0 x 2.0 | |
P | 1 | -20 | ±8 | -0.8 | 0.081 | -2.2 | SOT-23 | 2.9 x 2.4 | |
P | 1 | -20 | ±5 | -0.9 | 0.48 | -0.62 | SOT-523 | 1.6 x 1.6 | |
P | 1 | -20 | ±12 | -1 | 0.056 | -2.9 | SOT-23 | 2.9 x 2.4 | |
P | 1 | -20 | ±5 | -0.8 | 0.495 | -0.6 | SOT-723 | 1.2 x 1.2 | |
P | 1 | -20 | ±12 | -1 | 0.047 | -3.3 | SOT-23-6L | 2.9 x 2.8 | |
P | 1 | -20 | ±12 | -1 | 0.096 | -2.2 | SOT-23 | 2.9 x 2.4 | |
P | 1 | -20 | ±5 | -0.9 | - | -0.51 | DFN1006-3L | 1.0 x 0.6 | |
P | 1 | -20 | ±5 | -0.9 | 0.44 | -0.51 | DFN1006-3L | 1.0 x 0.6 | |
P | 1 | -20 | ±8 | -1 | 0.017 | -6.2 | DFN2020-6L | 2.0 x 2.0 | |
P | 1 | -20 | ±12 | -1 | 0.043 | -4 | SOT-23-3L | 2.9 x 2.8 | |
P | 1 | -20 | ±12 | -1 | 0.043 | -3.2 | SOT-23 | 2.9 x 2.4 | |
P | 1 | -20 | ±8 | -1 | 0.081 | -2.4 | SOT-23 | 2.9 x 2.4 | |
P | 1 | -20 | ±8 | -1 | 0.052 | -3.5 | SOT-23-3L | 2.9 x 2.8 | |
P | 1 | -20 | ±12 | -1 | 0.052 | -3.5 | SOT-23-3L | 2.9 x 2.8 | |
P | 1 | -30 | ±20 | -2.5 | 0.079 | -3.8 | SOP-8L | 4.9 x 6.0 | |
P | 1 | -30 | ±20 | -2.5 | 0.083 | -4.1 | SOT-23-3L | 2.9 x 2.8 | |
P | 1 | -30 | ±20 | -2.5 | 0.08 | -2.9 | SOT-23 | 2.9 x 2.4 | |
P | 1 | -30 | ±20 | -2.5 | 0.077 | -3.1 | SOT-23 | 2.9 x 2.4 | |
P | 1 | -30 | ±12 | -1.5 | 0.043 | -4.6 | SOT-23-3L | 2.9 x 2.8 | |
P | 1 | -30 | ±20 | -3 | 0.053 | -3.7 | SOT-23-3L | 2.9 x 2.8 | |
Dual P | 2 | -30 | ±12 | -1.4 | 0.045 | -5.6 | SOP-8L | 4.9 x 6.0 | |
Dual P | 2 | -30 | ±20 | -3 | 0.053 | -5.5 | SOP-8L | 4.9 x 6.0 | |
P | 1 | -50 | ±20 | -2 | 3.5 | -0.2 | SOT-23 | 2.9 x 2.4 | |
P | 1 | -20 | ±12 | -1 | 0.025 | -5.7 | SOT-23-3 | 2.9 x 2.8 | |
P | 1 | -30 | ±20 | -3 | 0.053 | -5.5 | SOP-8L | 4.9 x 6.0 | |
P | 1 | -30 | ±20 | -3 | 0.043 | -5.4 | SOP-8L | 4.9 x 6.0 | |
Dual P | 2 | -20 | ±8 | -1 | 0.09 | -3 | DFN2020-6L | 2.0 x 2.0 | |
Dual P | 2 | -20 | ±12 | -1 | 0.075 | -3.1 | DFN2020-6L | 2.0 x 2.0 | |
Dual P | 2 | -20 | ±12 | -1 | 0.052 | -3.7 | DFN2020-6L | 2.0 x 2.0 | |
Dual P | 2 | -20 | ±6 | -0.9 | 0.55 | -0.56 | SOT-563 | 1.6 x 1.6 | |
Dual P | 2 | -20 | ±12 | -2.5 | 0.07 | -3.6 | SOT-23-6L | 2.9 x 2.8 | |
Dual P | 2 | -20 | ±12 | -2.5 | 0.07 | -4.6 | SOP-8L | 4.9 x 6.0 | |
Dual P | 2 | -20 | ±10 | -1 | 0.08 | -3.3 | DFN2020-6L | 2.0 x 2.0 | |
Dual P | 2 | -30 | ±20 | -2.5 | 0.07 | -3.8 | SOP-8L | 4.9 x 6.0 | |
MOSFET | |
型号 | 说明 |
30V/4A PMOS | |
5A PMOS | |
5A/30V 双PMOS | |
3.5A/ 20V PMOS | |
4A/ 30V PMOS | |
2A P MOS | |
MOSFET类 MOSFET CLASS>>>MOS管 MOS TUBE | |||
型号 | 功能 | 适用范围 | 封装 |
18V P 沟道增强型 MOS 场效应管 | 电源管理、小功率驱动等</span> | SOT23-3 | |
P 沟道增强型 MOS 场效应管 | 笔记本、便携式设备等</span> | SOT23-3 | |
电源管理、小功率驱动等</span> | SOT23-3 | ||
30V P 沟道 MOS 场效应管 | 笔记本、便携式设备等</span> | SOT-23 | |
20V P 沟道增加型 MOS 场效应管 | TFT屏、数码相机、便携式小音响等 | SOP-8 | |
P 沟道增强型 MOS 场效应管 | 笔记本、便携式设备等</span> | SOT23 | |
-30V P 沟道增强型 MOS 场效应管 | LED屏驱动等 | SOT23-6 | |
20V 高密度 P 沟道 MOS 管</span> | 笔记本、便携式设备等</span> | SOP-8 | |
30V P 沟道增加型 MOS 场效应管 | 电源管理、小功率驱动等 | SOP-8 | |
双重增强型 MOSFET(N-P 沟道) | 笔记本电脑的电源管理系统、便携式设备和供电系统</span> | SOP-8 | |
20V P 沟道增强型 MOS 场效应管 | LED屏驱动等 | SOP-8 | |
30V P 沟道增强型 MOS 场效应管 | LED屏驱动等 | SOP-8 | |
30V P 沟道增强型 MOS 场效应管 | LED屏驱动等 | SOP-8 | |
MOSFET(金属氧化层半导体场效应晶体管)>>>MOSFET(金属氧化层半导体场效应晶体管) | |||||||
Part | Mode | VDS(Max) | VGS | ID(Max) | RDS(on) | Application | Package |
Number | |||||||
P channel | -20V | -8V | -2.8A | 93mΩ | ①②③④⑤</span> | SOT23/SOT23-3 | |
P channel | -20V | -12V | -3.1A | 77mΩ | ①②③④⑤</span> | SOT23 | |
P channel | -30V | -12V | -4.2A | 55mΩ | ①②③④⑤⑥⑦⑧ | SOT23/SOT23-3 | |
P channel | -30V | -20V | -2.9A | 92mΩ | ①②③④⑤⑥⑦⑧ | SOT23 | |
P channel | -30V | -20V | -4.1A | 46mΩ | ①②③④⑤⑥⑦⑧ | SOT23/SOT23-3 | |
P channel | -30V | -20V | -6A | 46mΩ | ①②③④⑤⑥⑦⑨ | SOP8/SOT89-3 | |
Double P | -30V | -20V | -6A | 53mΩ | ①②③④⑤⑥⑦⑧ | SOP8 | |
Double P | -30V | -20V | -6A | 46mΩ | ①②③④⑤⑥⑦⑧ | SOP8 | |
Applications： ①Mobile phone②MID③GPS④DC/DC Converter⑤Load Switch⑥Power Management Notebook⑦LCD Display Inverter⑧Battery powered system⑨Battery Protection | |||||||
功率MOSFET P沟道 | |||||||||||
产品名称 | 封装 | Rds(ON) (Ω)MAX Vgs=2.5V | Rds(ON) (Ω) Vgs=4.5V | Rds(ON) (Ω) Vgs=4.5V MAX | Vgs (off) (V) MIN | Vgs(off) (V) MAX | Ciss (pF) | Vdss (V) | Vgss (V) | Id(A) | 驱</span>动</span> 电压 (V) |
SOT-89 | 0.2 | 0.28 | -1 | -2.5 | 280 | -30 | 20 | -2.5 | -4.5 | ||
SOT-89 | 0.3 | 0.13 | 0.17 | -0.5 | -1.2 | 310 | -20 | 12 | -2.5 | -2.5 | |
SOT-23 | 0.067 | 0.095 | -1.2 | -2.6 | 435 | -30 | 20 | -3 | -4 | ||
SOT-89 | 0.07 | 0.1 | -1.2 | -2.6 | 450 | -30 | 20 | -5 | -4 | ||
SOT-23 | 0.35 | 0.45 | -1 | -3 | 160 | -30 | 20 | -0.7 | -4.5 | ||
SOT-23 | 0.5 | 0.23 | 0.3 | -0.5 | -1.2 | 180 | -20 | 12 | -0.7 | -2.5 | |
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