High and Low Side Driver CXMS5101B is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET

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The CXMS5101B is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 120 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross -conduction. Propagation delays are matched to simplify use in high frequency applications. It has two versions CXMS5101A & CXMS5101B.

   产品特点 返回TOPeLc嘉泰姆

z Fully operational to +120 V eLc嘉泰姆

z 3.3 V logic compatible eLc嘉泰姆

z Floating channel designed for bootstrap operation eLc嘉泰姆

z Gate drive supply range from 10 V to 20 V eLc嘉泰姆

z Output Source / Sink Current Capability 450mA / 900mA eLc嘉泰姆

z Independent Logic Inputs to Accommodate All Topologies eLc嘉泰姆

z -5V negative Vs ability eLc嘉泰姆

z Matched propagation delay for both channelseLc嘉泰姆

   应用范围 返回TOPeLc嘉泰姆

z Small and medium- power motor driver eLc嘉泰姆

z Power MOSFET or IGBT drivereLc嘉泰姆

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