• [ CXMS5102B ]

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目录

1.产品概述       2.产品特点     qxN嘉泰姆

3.应用范围       4.技术规格书下载（PDF文档）qxN嘉泰姆

5.产品封装       6.电路原理图  qxN嘉泰姆

7.相关产品qxN嘉泰姆

   产品概述 返回TOPqxN嘉泰姆

The CXMS5102B is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.

   产品特点 返回TOPqxN嘉泰姆

z Fully operational to +600 V z 3.3 V logic compatible qxN嘉泰姆

z dV/dt Immunity ±50 V/nsec qxN嘉泰姆

z Floating channel designed for bootstrap operation qxN嘉泰姆

z Gate drive supply range from 10 V to 20 V qxN嘉泰姆

z UVLO for low side channel qxN嘉泰姆

z Output Source / Sink Current Capability 300 mA / P$ qxN嘉泰姆

z -5V negative Vs ability qxN嘉泰姆

z Matched propagation delay for both channelsqxN嘉泰姆

   应用范围 返回TOPqxN嘉泰姆

z Small and medium- power motor driver qxN嘉泰姆

z Power MOSFET or IGBT driver qxN嘉泰姆

z Half-Bridge Power Converters z Full-Bridge Power ConvertersqxN嘉泰姆

   技术规格书（产品PDF) 返回TOP qxN嘉泰姆

     需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！qxN嘉泰姆

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产品封装图 返回TOPqxN嘉泰姆

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电路原理图 返回TOPqxN嘉泰姆

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◀ 上一篇:CXMS5102高性价比的大功率MOS管IGBT管栅极驱动专用芯片内部集成了逻辑信号输入处理电 路死区时控制电路闭锁电路电平位移电路脉冲滤波电路及输出驱动电路专用于无刷电机控制器中的驱动电路

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下一篇▶:CXMS5103基于P_SUB P_EPI工艺的高压高速功率MOSFET和IGBT驱动器浮动通道驱动器可独立驱动两个N通道功率MOSFET或IGBT其工作电压高达600V

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