首页 > 产品中心 > 功率器件 > N沟道P沟道双极MOSFETs >CXMS5107是N和P通道增强MOS场效应晶体管作为DC-DC转换器或电平移位应用的单个封装采用先进的沟道技术和设计以提供低栅极电荷的优秀RDS（ON）
CXMS5107是N和P通道增强MOS场效应晶体管作为DC-DC转换器或电平移位应用的单个封装采用先进的沟道技术和设计以提供低栅极电荷的优秀RDS（ON）
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CXMS5107是N和P通道增强MOS场效应晶体管作为DC-DC转换器或电平移位应用的单个封装采用先进的沟道技术和设计以提供低栅极电荷的优秀RDS（ON）
Trench Technology
Supper high density cell design for extremely low Rds(on)
Exceptional ON resistance and maximum DC current capability
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[ CXMS5107 ]
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产品概述 返回TOP
The CXMS5107 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or level shift applications, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Standard Product CXMS5107 is Pb-free
产品特点 返回TOP
Trench Technology
Supper high density cell design for extremely low Rds(on)
Exceptional ON resistance and maximum DC current capability
Small package design with SOT-563
应用范围 返回TOP
Driver: Relays, Solenoids, Lamps, Hammers
Power supply converters circuit
Load/Power Switching for potable device
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Product |
Polarity | Channel | VDS | VGS | VGS(th) | RDS(ON)@VGS=4.5V | ID@TA=25oC | Package | Size |
| (Max.) | (Max.) | (Max.) | (Typ.) | (MAX.) | (L×W) | ||||
| (V) | (V) | (V) | (Ω) | (A) | (mm) | ||||
| CXMS5105 | N + P | 2 | 20/-20 | ±6/±8 | 0.85/-1.0 | 0.18/0.085 | 0.65/-3.1 | DFN2020-6L | 2.0 x 2.0 |
| CXMS5106 | N + P | 2 | 20/-20 | ±6 | 0.9/-0.9 | 0.23/0.52 | 0.8/-0.59 | SOT-363 | 2.1 x 2.3 |
| CXMS5107 | N + P | 2 | 20/-20 | ±6 | 0.9/-0.9 | 0.18/0.45 | 0.79/-0.5 | SOT-563 | 1.6 x 1.6 |
| CXMS5108 | N + P | 2 | 20/-20 | ±8 | 1/-1 | 0.033/0.085 | 4.4/-2.8 | SOT-23-6L | 2.9 x 2.8 |
| CXMS5109 | N + P | 2 | 12/-12 | ±8 | 1.2/-1.2 | 0.028/-0.057 | 5.1/-4.0 | DFN2020-6L | 2.0 x 2.0 |
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