The CXSD62113 CXSD62113A CXSD62113B CXSD62113C CXSD62113E integrates dual step-down, constant-on-time,synchronous PWM controllers (that drives dual N-channel MOSFETs for each channel)

发布时间：2020-04-06 09:43:38 浏览次数：703 作者：嘉泰姆来源：1

摘要：The CXSD62113 CXSD62113A CXSD62113B CXSD62113C CXSD62113E integrates dual step-down, constant-on-time,synchronous PWM controllers (that drives dual N-channel MOSFETs for each channel)

目录82T嘉泰姆

1.产品概述 2.产品特点
3.应用范围 4.下载产品资料PDF文档
5.产品封装图 6.电路原理图
7.功能概述 8.相关产品82T嘉泰姆

一,产品概述(General Description) 82T嘉泰姆

The CXSD62113 CXSD62113A CXSD62113B CXSD62113C CXSD62113E integrates dual step-down, constant-on-time,synchronous PWM controllers (that drives dual N-channel MOSFETs for each channel) and two low drop-out regulators as well as various protections into a chip.The PWM controllers step down high voltage of a battery to generate low-voltage for NB applications. The output of PWM1 and PWM2 can be adjusted from 2V to 5.5V by setting a resistive voltage-divider from VOUTx to GND.82T嘉泰姆

The linear regulators provide 5V and 3.3V output for standby power supply. The linear regulators provide up to 100mA output current. When the PWMx output voltage is higher than LDOx bypass threshold, the related LDOx regulator is shut off and its output is connected to VOUTx by internal switchover MOSFET. It can save power dissipation. The charge pump circuit with 270kHz clock driver uses VOUT1 as its power supply to generate ap-proximately 15V DC voltage.
The CXSD62113/A/B/C provides excellent transient response and accurate DC output voltage in either PFM or PWM Mode. In Pulse-Frequency Mode (PFM), the
CXSD62113/A/B/C provides very high efficiency over light to heavy loads with loading-modulated switching frequencies. The Forced-PWM Mode works nearly at82T嘉泰姆

constant frequency for low-noise requirements. The unique ultrasonic mode maintains the switching frequency above 25kHz, which eliminates noise in
audio application.
The CXSD62113/A/B/C is equipped with accurate sourc-ing and current-limit, output under-voltage output over-voltage protections, being perfect for NB applications. A 1.4ms (typ.) digital soft-start can reduce the start-up current. A soft-stop function actively discharges the output capacitors by the discharge device. The CXSD62113/A/B has individual enable controls for each PWM channels. Pulling both EN1/2 pin low shuts down the all of outputs unless LDO3 output. The LDO3 and LDO5 of CXSD62113A/C are always on standby power.
The CXSD62113/A/B/C is available in a TQFN3x3-20 package.
二.产品特点(Features)82T嘉泰姆

Wide Input voltage Range from 6V to 25V
Provide 5 Independent Outputs with ±1.0% Accuracy Over-Temperature
- PWM1 Controller with Adjustable (2V to 5.5V) Out-put
PWM2 Controller with Adjustable (2V to 5.5V) Out-put
100mA Low Dropout Regulator (LDO5) with Fixed 5V Output
100mA Low Dropout Regulator (LDO3) with Fixed 3.3V Output
270kHz Clock Signal for 15V Charge Pump (Used VOUT1 as Its Power Supply)
Excellent Line/Load Regulations about ±1.5% Over-Temperature Range
Built in POR Control Scheme Implemented
Constant On-Time Control Scheme with Frequency
Compensation for PWM Mode
Selectable Switching Frequency in PWM Mode
Built-in Digital Soft-Start for PWM Outputs and Soft-
Stop for PWM Outputs and LDO Outputs
Integrated Bootstrap Forward P-CH MOSFET
High Efficiency over Light to Full Load Range (PWMs)
Built-in Power Good Indicators (PWMs)
Independent Enable Inputs (PWMs, LDO)
70% Under-Voltage and 125% Over-Voltage Protec-tions (PWM)
Adjustable Current-Limit Protection (PWMs)
- Using Sense Low-Side MOSFET’s RDS(ON)
Over-Temperature Protection
3mmx3mm Thin QFN-20 (TQFN3x3-20) package
Lead Free and Green Device Available (RoHS Compliant)
三,应用范围 (Applications)82T嘉泰姆

Notebook and Sub-Notebook Computers
Portable Devices
DDR1, DDR2, and DDR3 Power Supplies
3-Cell and 4-Cell Li+ Battery-Powered Devices
Graphic Cards
Game Consoles
Telecommunications
四.下载产品资料PDF文档
82T嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！82T嘉泰姆

QQ截图20160419174301.jpg 82T嘉泰姆

五,产品封装图 (Package)82T嘉泰姆

82T嘉泰姆

六.电路原理图82T嘉泰姆

82T嘉泰姆

七,功能概述82T嘉泰姆

Input Capacitor Selection
The input capacitor is chosen based on the voltage rating and the RMS current rating. For reliable operation, select the capacitor voltage rating to be at least 1.3 times higher than the maximum input voltage. The maximum RMS current rating requirement is approximately IOUT/2, where IOUT is the load current. During power up, the input capaci-tors have to handle large amount of surge current. In low-duty notebook appliactions, ceramic capacitors are remmended. The capacitors must be connected between the drain of high-side MOSFET and the source of low-side MOSFET with very low-impeadance PCB layout.
MOSFET Selection
The application for a notebook battery with a maximum volt-age of 24V, at least a minimum 30V MOSFETs should be used. The design has to trade off the gate charge with the RDS(ON) of the MOSFET:
· For the low-side MOSFET, before it is turned on, the body diode has been conducted. The low-side MOSFET
driver will not charge the miller capacitor of this MOSFET.
In the turning off process of the low-side MOSFET,the load current will shift to the body diode first. The
high dv/dt of the phase node voltage will charge the miller capacitor through the low-side MOSFET driver
sinking current path. This results in much less switching loss of the low-side MOSFETs. The duty
cycle is often very small in high battery voltage applications, and the low-side MOSFET will con-
duct most of the switching cycle; therefore, the less the RDS(ON) of the low-side MOSFET, the less the power
loss. The gate charge for this MOSFET is usually a secondary consideration. The high-side MOSFET
does not have this zero voltage switching condition, and because it conducts for less time
compared to the low-side MOSFET, the switching loss tends to be dominant. Priority should be given
to the MOSFETs with less gate charge, so that both the gate driver loss and switching loss will be minimized.
The selection of the N-channel power MOSFETs are de-termined by the RDS(ON), reversing transfer capacitance
Layout Consideration
In any high switching frequency converter, a correct layout is important to ensure proper operation of the regulator.
With power devices switching at higher frequency, the resulting current transient will cause voltage spike across the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transition of the PWM MOSFET. Before turn-off condition, the MOSFET is carrying the full load current. During turn-off,current stops flowing in the MOSFET and is freewheeling by the lower MOSFET and parasitic diode. Any parasitic inductance of the circuit generates a large voltage spike during the switching interval. In general, using short and wide printed circuit traces should minimize interconnect-ing impedances and the magnitude of voltage spike. And signal and power grounds are to be kept separating and finally combined to use the ground plane construction or single point grounding. The best tie-point between the signal ground and the power ground is at the negative side of the output capacitor on each channel, where there is less noise. Noisy traces beneath the IC are not recommended. Below is a checklist for your layout:
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Part_No 82T嘉泰姆	Package 82T嘉泰姆	Archi82T嘉泰姆 tectu82T嘉泰姆	Phase82T嘉泰姆	No.of82T嘉泰姆 PWM82T嘉泰姆 Output82T嘉泰姆	Output 82T嘉泰姆 Current82T嘉泰姆 (A) 82T嘉泰姆	min82T嘉泰姆	max82T嘉泰姆	Reference82T嘉泰姆 Voltage82T嘉泰姆 (V) 82T嘉泰姆	Bias 82T嘉泰姆 Voltage82T嘉泰姆 (V) 82T嘉泰姆	Quiescent82T嘉泰姆 Current82T嘉泰姆 (uA) 82T嘉泰姆
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CXSD62106\|A82T嘉泰姆	TQFN4x4-482T嘉泰姆 TQFN3x3-2082T嘉泰姆	COT82T嘉泰姆	182T嘉泰姆	282T嘉泰姆	2082T嘉泰姆	382T嘉泰姆	2882T嘉泰姆	0.7582T嘉泰姆	582T嘉泰姆	80082T嘉泰姆
CXSD6210782T嘉泰姆	TQFN3x3-1682T嘉泰姆	COT82T嘉泰姆	182T嘉泰姆	182T嘉泰姆	2082T嘉泰姆	1.882T嘉泰姆	2882T嘉泰姆	0.7582T嘉泰姆	582T嘉泰姆	40082T嘉泰姆
CXSD6210882T嘉泰姆	QFN3.5x3.5-1482T嘉泰姆 TQFN3x3-1682T嘉泰姆	COT82T嘉泰姆	182T嘉泰姆	182T嘉泰姆	2082T嘉泰姆	1.882T嘉泰姆	2882T嘉泰姆	0.7582T嘉泰姆	582T嘉泰姆	40082T嘉泰姆
CXSD6210982T嘉泰姆	TQFN3x3-1682T嘉泰姆	COT82T嘉泰姆	182T嘉泰姆	282T嘉泰姆	2082T嘉泰姆	1.882T嘉泰姆	2882T嘉泰姆	0.7582T嘉泰姆	582T嘉泰姆	40082T嘉泰姆
CXSD6211082T嘉泰姆	QFN3x3-2082T嘉泰姆 TQFN3x3-1682T嘉泰姆	COT82T嘉泰姆	182T嘉泰姆	282T嘉泰姆	2082T嘉泰姆	382T嘉泰姆	2882T嘉泰姆	1.8\|1.5\|0.582T嘉泰姆	582T嘉泰姆	74082T嘉泰姆
CXSD6211182T嘉泰姆	TQFN4x4-2482T嘉泰姆 \|QFN3x3-2082T嘉泰姆	CM82T嘉泰姆	182T嘉泰姆	282T嘉泰姆	1582T嘉泰姆	582T嘉泰姆	2882T嘉泰姆	0.582T嘉泰姆	N82T嘉泰姆	300082T嘉泰姆
CXSD6211282T嘉泰姆	TDFN3x3-1082T嘉泰姆	COT82T嘉泰姆	182T嘉泰姆	182T嘉泰姆	2082T嘉泰姆	1.882T嘉泰姆	2882T嘉泰姆	0.582T嘉泰姆	582T嘉泰姆	25082T嘉泰姆
CXSD62113\|C82T嘉泰姆	TQFN3x3-2082T嘉泰姆	COT82T嘉泰姆	182T嘉泰姆	282T嘉泰姆	1582T嘉泰姆	682T嘉泰姆	2582T嘉泰姆	282T嘉泰姆	N82T嘉泰姆	55082T嘉泰姆
CXSD62113E82T嘉泰姆	TQFN 3x3 2082T嘉泰姆	COT82T嘉泰姆	282T嘉泰姆	282T嘉泰姆	1182T嘉泰姆	682T嘉泰姆	2582T嘉泰姆	282T嘉泰姆	N82T嘉泰姆	55082T嘉泰姆
CXSD6211482T嘉泰姆	TQFN3x3-2082T嘉泰姆	COT82T嘉泰姆	282T嘉泰姆	282T嘉泰姆	1182T嘉泰姆	5.582T嘉泰姆	2582T嘉泰姆	282T嘉泰姆	N82T嘉泰姆	28082T嘉泰姆
CXSD6211582T嘉泰姆	QFN4x4-2482T嘉泰姆	VM82T嘉泰姆	282T嘉泰姆	182T嘉泰姆	6082T嘉泰姆	3.182T嘉泰姆	13.282T嘉泰姆	0.8582T嘉泰姆	1282T嘉泰姆	500082T嘉泰姆
CXSD62116A\|B\|C82T嘉泰姆	SOP-8P82T嘉泰姆	VM82T嘉泰姆	182T嘉泰姆	182T嘉泰姆	2082T嘉泰姆	2.982T嘉泰姆	13.282T嘉泰姆	0.882T嘉泰姆	1282T嘉泰姆	1600082T嘉泰姆
CXSD6211782T嘉泰姆	SOP-2082T嘉泰姆	VM82T嘉泰姆	282T嘉泰姆	282T嘉泰姆	3082T嘉泰姆	1082T嘉泰姆	13.282T嘉泰姆	182T嘉泰姆	1282T嘉泰姆	500082T嘉泰姆
CXSD6211882T嘉泰姆	TDFN3x3-1082T嘉泰姆	COT82T嘉泰姆	182T嘉泰姆	182T嘉泰姆	2582T嘉泰姆	1.882T嘉泰姆	2882T嘉泰姆	0.782T嘉泰姆	582T嘉泰姆	25082T嘉泰姆
CXSD6211982T嘉泰姆	TQFN3x3-2082T嘉泰姆	COT82T嘉泰姆	282T嘉泰姆	182T嘉泰姆	4082T嘉泰姆	1.882T嘉泰姆	2582T嘉泰姆	REFIN Setting82T嘉泰姆	582T嘉泰姆	70082T嘉泰姆
CXSD6212082T嘉泰姆	QFN 3x3 2082T嘉泰姆 TQFN 3x3 1682T嘉泰姆	COT82T嘉泰姆	182T嘉泰姆	282T嘉泰姆	2082T嘉泰姆	382T嘉泰姆	2882T嘉泰姆	1.8\|1.5 1.35\|1.2 0.582T嘉泰姆	582T嘉泰姆	80082T嘉泰姆
CXSD62121A82T嘉泰姆	TQFN3x3 2082T嘉泰姆	COT82T嘉泰姆	182T嘉泰姆	282T嘉泰姆	1582T嘉泰姆	382T嘉泰姆	2882T嘉泰姆	0.7582T嘉泰姆	582T嘉泰姆	22082T嘉泰姆
CXSD62121B82T嘉泰姆	TQFN3x3 2082T嘉泰姆	COT82T嘉泰姆	182T嘉泰姆	282T嘉泰姆	1582T嘉泰姆	382T嘉泰姆	2882T嘉泰姆	0.7582T嘉泰姆	582T嘉泰姆	22082T嘉泰姆
CXSD6212182T嘉泰姆	TQFN3x3-2082T嘉泰姆	COT82T嘉泰姆	182T嘉泰姆	282T嘉泰姆	2082T嘉泰姆	382T嘉泰姆	2882T嘉泰姆	0.7582T嘉泰姆	582T嘉泰姆	18082T嘉泰姆

82T嘉泰姆

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The CXSD62113 CXSD62113A CXSD62113B CXSD62113C CXSD62113E integrates dual step-down, constant-on-time,synchronous PWM controllers (that drives dual N-channel MOSFETs for each channel)

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The CXSD62113 CXSD62113A CXSD62113B CXSD62113C CXSD62113E integrates dual step-down, constant-on-time,synchronous PWM controllers (that drives dual N-channel MOSFETs for each channel)

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