The CXSD62104 integrates dual step-down, constant-ontime, synchronous PWM controllers (that drives dual N-channel MOSFETs for each channel) and two low drop-out regulators as well as various

发布时间：2020-04-06 09:43:38 浏览次数：702 作者：嘉泰姆来源：1

摘要：The CXSD62104 integrates dual step-down, constant-ontime, synchronous PWM controllers (that drives dual N-channel MOSFETs for each channel) and two low drop-out regulators as well as various

目录cKc嘉泰姆

1.产品概述 2.产品特点
3.应用范围 4.下载产品资料PDF文档
5.产品封装图 6.电路原理图
7.功能概述 8.相关产品cKc嘉泰姆

一,产品概述(General Description)
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The CXSD62104 integrates dual step-down, constant-ontime, synchronouscKc嘉泰姆

PWM controllers (that drives dual N-channel MOSFETs for each channel) and
two low drop-out regulators as well as various protections into a chip.The PWM
controllers step down high voltage of a battery to generate low-voltage for NB
applications. The output of PWM1 and PWM2 can be adjusted from 2V to 5.5V
by setting a resistive voltage-divider from VOUTx to GND.The linear regulators
provide 5V and 3.3V output for standby power supply. The linear regulatorscKc嘉泰姆

provide up to 100mA output current. When the PWMx output voltage is higher cKc嘉泰姆

than LDOx bypass threshold, the related LDOx regulator is shut off and its cKc嘉泰姆

output is connected to VOUTx by internal switchover MOSFET. It can save power dissipation.
The CXSD62104 provides excellent transient response and accurate DC cKc嘉泰姆

output voltage in either PFM or PWM Mode.In Pulse-Frequency Mode (PFM), cKc嘉泰姆

the CXSD62104 provides very high efficiency over light to heavy loads with cKc嘉泰姆

loading-modulated switching frequencies. The Forced-PWM mode works nearly cKc嘉泰姆

at constant frequency for low-noise requirements. The unique ultrasonic modecKc嘉泰姆

maintains the switching frequency above 25KHz, which eliminates noise in audio applications.cKc嘉泰姆

The CXSD62104 is equipped with accurate sourcing cur-rent-limit, outputcKc嘉泰姆

under-voltage and output over-voltage protections, being perfect for NB cKc嘉泰姆

applications. A 1.7ms (typ.) digital soft-start can reduce the start-up current. cKc嘉泰姆

A soft-stop function actively discharges the output capaci-tors by the discharge cKc嘉泰姆

device. The CXSD62104 has individual enable controls for PWM channels and cKc嘉泰姆

LDOs. Pulling both ENPWM pin and ENLDO pin low shuts down the whole chipcKc嘉泰姆

with low quiescent current close to zero.
The CXSD62104 is available in a TQFN4x4-24A package.
二.产品特点(Features)
Wide Input Voltage Range from 6V to 25V
Provide 4 Independent Outputs with ±1.5% Accu-
racy Over-Temperature
- PWM1 Controller with Adjustable (2V to 5.5V) Out-put
PWM2 Controller with Adjustable (2V to 5.5V) Out-put
100mA Low Dropout Regulator (LDO5) with Fixed 5V Output
100mA Low Dropout Regulator (LDO3) with Fixed 3.3V Output
Excellent Line/Load Regulations about ±1.5% Over-Temperature Range
±1%, (±1.5%, 50μA) 2.0V Reference Voltage Output
Built-In POR Control Scheme Implemented
Selectable Forced-PWM or Automatic PFM/PWM
(with Selectable Ultrasonic Operation)
Constant-On-Time Control Scheme with Frequency
Compensation for PWM Mode
Selectable Switching Frequency in PWM Mode
Built-in Digital Soft-Start for PWM Outputs and Soft-
Stop for PWM Outputs and LDO Outputs
Integrated Bootstrap Forward P-CH MOSFET
High Efficiency over Light to Full Load Range (PWMs)
Built-in Power Good Indicators (PWMs)
Independent Enable Inputs (PWMs, LDO)
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70% Under-Voltage and 125% Over-Voltage Protec-tions (PWM)cKc嘉泰姆

Adjustable Current-Limit Protection (PWMs)
- Using Sense Low-Side MOSFET’s RDS(ON)
Over-Temperature Protection
4mmx4mm Thin QFN-24 (TQFN4x4-24A) package
Lead Free and Green Device Available (RoHS Compliant)cKc嘉泰姆

三,应用范围 (Applications)cKc嘉泰姆

Notebook and Sub-Notebook ComputerscKc嘉泰姆

Portable Devices
DDR1, DDR2, and DDR3 Power Supplies
3-Cell and 4-Cell Li+ Battery-Powered Devices
Graphic Cards
Game Consoles
TelecommunicationscKc嘉泰姆

四.下载产品资料PDF文档 cKc嘉泰姆

需要详细的PDF规格书请扫一扫微信联系我们，还可以获得免费样品以及技术支持！
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QQ截图20160419174301.jpg cKc嘉泰姆

五,产品封装图 (Package)cKc嘉泰姆

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六.电路原理图cKc嘉泰姆

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七,功能概述cKc嘉泰姆

Input Capacitor Selection
The input capacitor is chosen based on the voltage rating and the RMS current rating. For reliable operation, select
the capacitor voltage rating to be at least 1.3 times higher than the maximum input voltage. The maximum RMS
current rating requirement is approximately IOUT/2, where IOUT is the load current. During power up, the input capaci-tors have to handle large amount of surge current. In low-duty notebook appliactions, ceramic capacitors are
remmended. The capacitors must be connected between the drain of high-side MOSFET and the source of low-
side MOSFET with very low-impeadance PCB layout.
MOSFET Selection
The application for a notebook battery with a maximum volt-age of 24V, at least a minimum 30V MOSFETs should
be used. The design has to trade off the gate charge with the RDS(ON) of the MOSFET:
· For the low-side MOSFET, before it is turned on, the body diode has been conducted. The low-side MOSFET
driver will not charge the miller capacitor of this MOSFET.
In the turning off process of the low-side MOSFET,the load current will shift to the body diode first. The
high dv/dt of the phase node voltage will charge the miller capacitor through the low-side MOSFET driver
sinking current path. This results in much less switching loss of the low-side MOSFETs. The duty
cycle is often very small in high battery voltage applications, and the low-side MOSFET will con-
duct most of the switching cycle; therefore, the less the RDS(ON) of the low-side MOSFET, the less the power
loss. The gate charge for this MOSFET is usually a secondary consideration. The high-side MOSFET
does not have this zero voltage switching condition, and because it conducts for less time
compared to the low-side MOSFET, the switching loss tends to be dominant. Priority should be given
to the MOSFETs with less gate charge, so that both the gate driver loss and switching loss will be minimized.
The selection of the N-channel power MOSFETs are de-termined by the RDS(ON), reversing transfer capacitance
(CRSS) and maximum output current requirement. The losses in the MOSFETs have two components: conduc-
tion loss and transition loss. For the high-side and low-side MOSFETs, the losses are approximately given by
the following equations:
Layout Consideration
In any high switching frequency converter, a correct layout is important to ensure proper operation of the regulator.
With power devices switching at higher frequency, the resulting current transient will cause voltage spike across
the interconnecting impedance and parasitic circuit elements. As an example, consider the turn-off transition
of the PWM MOSFET. Before turn-off condition, the MOSFET is carrying the full load current. During turn-off,
current stops flowing in the MOSFET and is freewheeling by the lower MOSFET and parasitic diode. Any parasitic
inductance of the circuit generates a large voltage spike during the switching interval. In general, using short and
wide printed circuit traces should minimize interconnect-ing impedances and the magnitude of voltage spike. And
signal and power grounds are to be kept separating and finally combined to use the ground plane construction or
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single point grounding. The best tie-point between the signal ground and the power ground is at the negative
side of the output capacitor on each channel, where there is less noise. Noisy traces beneath the IC are not
recommended. Below is a checklist for your layout:
Layout Consideration (Cont.)
Keep the switching nodes (UGATEx, LGATEx, BOOTx,and PHASEx) away from sensitive small signal nodes
(REF, ILIMx, and FBx) since these nodes are fast mov-ing signals. Therefore, keep traces to these nodes as
short as possible and there should be no other weak signal traces in parallel with theses traces on any layer.cKc嘉泰姆

Minimizing the impedance with wide layout plane be-tween the two pads reduces the voltage bounce ofcKc嘉泰姆

CXSD62104cKc嘉泰姆

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CXSD62100cKc嘉泰姆	TQFN3x3-10cKc嘉泰姆	VMcKc嘉泰姆	1cKc嘉泰姆	1cKc嘉泰姆	25cKc嘉泰姆	4.5cKc嘉泰姆	13.2cKc嘉泰姆	0.6cKc嘉泰姆	5~12cKc嘉泰姆	2500cKc嘉泰姆
CXSD62101\|LcKc嘉泰姆	TDFN3x3-10cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	1cKc嘉泰姆	30cKc嘉泰姆	3cKc嘉泰姆	25cKc嘉泰姆	0.8cKc嘉泰姆	5~12cKc嘉泰姆	2000cKc嘉泰姆
CXSD62102cKc嘉泰姆	TQFN3x3-16cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	1cKc嘉泰姆	30cKc嘉泰姆	1.8cKc嘉泰姆	28cKc嘉泰姆	0.6cKc嘉泰姆	5cKc嘉泰姆	600cKc嘉泰姆
CXSD62102AcKc嘉泰姆	TQFN 3x3 16cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	1cKc嘉泰姆	30cKc嘉泰姆	1.8cKc嘉泰姆	28cKc嘉泰姆	0.6cKc嘉泰姆	5cKc嘉泰姆	600cKc嘉泰姆
CXSD62103cKc嘉泰姆	QFN4x4-24cKc嘉泰姆	VMcKc嘉泰姆	2cKc嘉泰姆	1cKc嘉泰姆	50cKc嘉泰姆	4.5cKc嘉泰姆	13.2cKc嘉泰姆	0.6cKc嘉泰姆	5~12cKc嘉泰姆	5000cKc嘉泰姆
CXSD62104cKc嘉泰姆	TQFN4x4-24cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	2cKc嘉泰姆	15cKc嘉泰姆	6cKc嘉泰姆	25cKc嘉泰姆	2cKc嘉泰姆	NcKc嘉泰姆	550cKc嘉泰姆
CXSD62105cKc嘉泰姆	TQFN4x4-24cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	2cKc嘉泰姆	15cKc嘉泰姆	6cKc嘉泰姆	25cKc嘉泰姆	2cKc嘉泰姆	NcKc嘉泰姆	550cKc嘉泰姆
CXSD62106\|AcKc嘉泰姆	TQFN4x4-4cKc嘉泰姆 TQFN3x3-20cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	2cKc嘉泰姆	20cKc嘉泰姆	3cKc嘉泰姆	28cKc嘉泰姆	0.75cKc嘉泰姆	5cKc嘉泰姆	800cKc嘉泰姆
CXSD62107cKc嘉泰姆	TQFN3x3-16cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	1cKc嘉泰姆	20cKc嘉泰姆	1.8cKc嘉泰姆	28cKc嘉泰姆	0.75cKc嘉泰姆	5cKc嘉泰姆	400cKc嘉泰姆
CXSD62108cKc嘉泰姆	QFN3.5x3.5-14cKc嘉泰姆 TQFN3x3-16cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	1cKc嘉泰姆	20cKc嘉泰姆	1.8cKc嘉泰姆	28cKc嘉泰姆	0.75cKc嘉泰姆	5cKc嘉泰姆	400cKc嘉泰姆
CXSD62109cKc嘉泰姆	TQFN3x3-16cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	2cKc嘉泰姆	20cKc嘉泰姆	1.8cKc嘉泰姆	28cKc嘉泰姆	0.75cKc嘉泰姆	5cKc嘉泰姆	400cKc嘉泰姆
CXSD62110cKc嘉泰姆	QFN3x3-20cKc嘉泰姆 TQFN3x3-16cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	2cKc嘉泰姆	20cKc嘉泰姆	3cKc嘉泰姆	28cKc嘉泰姆	1.8\|1.5\|0.5cKc嘉泰姆	5cKc嘉泰姆	740cKc嘉泰姆
CXSD62111cKc嘉泰姆	TQFN4x4-24cKc嘉泰姆 \|QFN3x3-20cKc嘉泰姆	CMcKc嘉泰姆	1cKc嘉泰姆	2cKc嘉泰姆	15cKc嘉泰姆	5cKc嘉泰姆	28cKc嘉泰姆	0.5cKc嘉泰姆	NcKc嘉泰姆	3000cKc嘉泰姆
CXSD62112cKc嘉泰姆	TDFN3x3-10cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	1cKc嘉泰姆	20cKc嘉泰姆	1.8cKc嘉泰姆	28cKc嘉泰姆	0.5cKc嘉泰姆	5cKc嘉泰姆	250cKc嘉泰姆
CXSD62113\|CcKc嘉泰姆	TQFN3x3-20cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	2cKc嘉泰姆	15cKc嘉泰姆	6cKc嘉泰姆	25cKc嘉泰姆	2cKc嘉泰姆	NcKc嘉泰姆	550cKc嘉泰姆
CXSD62113EcKc嘉泰姆	TQFN 3x3 20cKc嘉泰姆	COTcKc嘉泰姆	2cKc嘉泰姆	2cKc嘉泰姆	11cKc嘉泰姆	6cKc嘉泰姆	25cKc嘉泰姆	2cKc嘉泰姆	NcKc嘉泰姆	550cKc嘉泰姆
CXSD62114cKc嘉泰姆	TQFN3x3-20cKc嘉泰姆	COTcKc嘉泰姆	2cKc嘉泰姆	2cKc嘉泰姆	11cKc嘉泰姆	5.5cKc嘉泰姆	25cKc嘉泰姆	2cKc嘉泰姆	NcKc嘉泰姆	280cKc嘉泰姆
CXSD62115cKc嘉泰姆	QFN4x4-24cKc嘉泰姆	VMcKc嘉泰姆	2cKc嘉泰姆	1cKc嘉泰姆	60cKc嘉泰姆	3.1cKc嘉泰姆	13.2cKc嘉泰姆	0.85cKc嘉泰姆	12cKc嘉泰姆	5000cKc嘉泰姆
CXSD62116A\|B\|CcKc嘉泰姆	SOP-8PcKc嘉泰姆	VMcKc嘉泰姆	1cKc嘉泰姆	1cKc嘉泰姆	20cKc嘉泰姆	2.9cKc嘉泰姆	13.2cKc嘉泰姆	0.8cKc嘉泰姆	12cKc嘉泰姆	16000cKc嘉泰姆
CXSD62117cKc嘉泰姆	SOP-20cKc嘉泰姆	VMcKc嘉泰姆	2cKc嘉泰姆	2cKc嘉泰姆	30cKc嘉泰姆	10cKc嘉泰姆	13.2cKc嘉泰姆	1cKc嘉泰姆	12cKc嘉泰姆	5000cKc嘉泰姆
CXSD62118cKc嘉泰姆	TDFN3x3-10cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	1cKc嘉泰姆	25cKc嘉泰姆	1.8cKc嘉泰姆	28cKc嘉泰姆	0.7cKc嘉泰姆	5cKc嘉泰姆	250cKc嘉泰姆
CXSD62119cKc嘉泰姆	TQFN3x3-20cKc嘉泰姆	COTcKc嘉泰姆	2cKc嘉泰姆	1cKc嘉泰姆	40cKc嘉泰姆	1.8cKc嘉泰姆	25cKc嘉泰姆	REFIN SettingcKc嘉泰姆	5cKc嘉泰姆	700cKc嘉泰姆
CXSD62120cKc嘉泰姆	QFN 3x3 20cKc嘉泰姆 TQFN 3x3 16cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	2cKc嘉泰姆	20cKc嘉泰姆	3cKc嘉泰姆	28cKc嘉泰姆	1.8\|1.5 1.35\|1.2 0.5cKc嘉泰姆	5cKc嘉泰姆	800cKc嘉泰姆
CXSD62121AcKc嘉泰姆	TQFN3x3 20cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	2cKc嘉泰姆	15cKc嘉泰姆	3cKc嘉泰姆	28cKc嘉泰姆	0.75cKc嘉泰姆	5cKc嘉泰姆	220cKc嘉泰姆
CXSD62121BcKc嘉泰姆	TQFN3x3 20cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	2cKc嘉泰姆	15cKc嘉泰姆	3cKc嘉泰姆	28cKc嘉泰姆	0.75cKc嘉泰姆	5cKc嘉泰姆	220cKc嘉泰姆
CXSD62121cKc嘉泰姆	TQFN3x3-20cKc嘉泰姆	COTcKc嘉泰姆	1cKc嘉泰姆	2cKc嘉泰姆	20cKc嘉泰姆	3cKc嘉泰姆	28cKc嘉泰姆	0.75cKc嘉泰姆	5cKc嘉泰姆	180cKc嘉泰姆

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The CXSD62104 integrates dual step-down, constant-ontime, synchronous PWM controllers (that drives dual N-channel MOSFETs for each channel) and two low drop-out regulators as well as various

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The CXSD62104 integrates dual step-down, constant-ontime, synchronous PWM controllers (that drives dual N-channel MOSFETs for each channel) and two low drop-out regulators as well as various

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