CXSD62110同步降压脉冲宽度调制控制器来产生VDDQ源极和陷极LDO线性调节器来产生VTT

目录

1.产品概述       2.产品特点     

3.应用范围       4.技术规格书下载（PDF文档）

5.产品封装       6.电路原理图  

7.相关产品

   产品概述 返回TOP

The CXSD62110 integrates a synchronous buck PWM controller to generate VDDQ, a sourcing and sinking LDO linear regulator to generate VTT. It provides a complete power supply for DDR2 and DDR3 memory system. It offers the lowest total solution cost in system where space is at a premium. The CXSD62110 provides excellent transient response and accurate DC voltage output in PFM Mode. In Pulse Frequency Mode (PFM), the CXSD62110 provides very high efficiency over light to heavy loads with loading-modulated switching frequencies. The CXSD62110 is equipped with accurate current-limit, output under-voltage, and output over-voltage protections. A Power-On- Reset function monitors the voltage on VCC prevents wrong operation during power on. The LDO is designed to provide a regulated voltage with bi-directional output current for DDR-SDRAM termination. The device integrates two power transistors to source or sink current up to 1.5A. It also incorporates current-limit and thermal shutdown protection. An internal resistor divider is used to provide a half voltage of VDDQSNS for VTTREF and VTT Voltage. The VTT output voltage is only requiring 20mF of ceramic output capacitance for stability and fast transient response. The S3 and S5 pins provide the sleep state for VTT (S3 state) and suspend state (S4/S5 state) for device, when S5 and S3 are both pulled low the device provides the soft-off for VTT and VTTREF.The CXSD62110 is available in 3mmx3mm 20-pin QFN and 3mmx3mm 16-pin TQFN packages.

   产品特点 返回TOP

Buck Controller (VDDQ) 

· High Input Voltages Range from 3V to 28V Input Power 

· Provide 1.8V (DDR2), 1.5V (DDR3) or Adjustable Output Voltage from 0.5V to 2V - ±1% Accuracy Over-Temperature 

· Build in VREF Voltage 1.8V ±1% Accuracy over Temperature 

· Integrated MOSFET Drivers 

· Integrated Bootstrap Forward P-CH MOSFET 

· Excellent Line and Load Transient Responses 

· PFM Mode for Increased Light Load Efficiency 

· Selectable 300kHz/400kHz/500kHz Switching Frequebcies 

· Integrated MOSFET Drivers and Bootstrap Diode 

· S3 and S5 Pins Control The Device in S0, S3, or S4/S5 State 

· Power Good Monitoring 

· 50% Under-Voltage Protection (UVP) 

· 125% Over-Voltage Protection (OVP) 

· Adjustable Current-Limit Protection 

- Using Sense Low-Side MOSFET RDS(ON) 

· QFN-20 3mmx3mm Package (QFN-20) and QFN-16 3mmx3mm Thin Package (TQFN-16) 

· Lead Free Available (RoHS Compliant) +1.5A LDO Section (VTT) 

· Souring or Sinking Current up to 1.5A 

· Fast Transient Response for Output Voltage 

· Output Ceramic Capacitors Support at Least 10mF MLCC 

· VTT and VTTREF Track at Half the VDDQSNS by Internal Divider 

· ±20mV Accuracy for VTT and VTTREF 

· Independent Over-Current-Limit (OCL) 

· Thermal Shutdown Protection

   应用范围 返回TOP

· DDR2, and DDR3 Memory Power Supplies 

· SSTL-2 SSTL-18 and HSTL Termination

   技术规格书（产品PDF) 返回TOP 

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产品封装图 返回TOP

电路原理图 返回TOP

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