The JTM4438uses advanced trench technology anddesign to pro
时间:2015-08-24 17:14来源:未知 作者:oumao18 点击:
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目录 1. 产品概述 2. 产品特点 3. 应用范围 4. 产品封装图 5. 电路原理图 6. 产品PDF文档 7. 功能概述 8 . 相关产品 一 , 产品概述( General Description) The JTM4438uses advanced trench technology and design
|
目录
一,产品概述(General Description)
The JTM4438uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
二.产品特点(Features)
VDS = 60V,ID =9A RDS(ON) < 16mΩ @ VGS=10V
(Typ:12mΩ)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Low gate to drain charge to reduce switching losses
三,应用范围 (Applications)
Power switching application
Load switch
四,产品封装图 (Package)
五,电路原理图
六.产品PDF文档
七,功能概述
|
Parameter |
Symbol |
Limit |
Unit |
|
Drain-Source Voltage |
VDS |
60 |
V |
|
Gate-Source Voltage |
VGS |
±20 |
V |
|
Drain Current-Continuous |
ID |
9 |
A |
|
Drain Current-Continuous(TC=100℃) |
ID (100℃) |
6 |
A |
|
Pulsed Drain Current |
IDM |
40 |
A |
|
Maximum Power Dissipation |
PD |
3.1 |
W |
|
Operating Junction and Storage Temperature Range |
TJ,TSTG |
-55 To 150 |
℃ |
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