|
Symbol |
Parameter |
ConditionConditionss |
Min |
Typ |
Max |
Unit |
|
On/On/OOff States |
|
|
|
|
|
|
BVDSS |
Drain-Source Breakdown Voltage |
VGS=0V ID=250μA |
100 |
|
|
V |
|
IDSS |
Zero Gate Voltage Drain Current(Tc=25℃) |
VDS=100V,VGS=0V |
|
|
1 |
μA |
|
IDSS |
Zero Gate Voltage Drain Current(Tc=125℃) |
VDS=100V,VGS=0V |
|
|
1 |
μA |
|
IGSS |
Gate-Body Leakage Current |
VGS=±20V,VDS=0V |
|
|
±100 |
nA |
|
VGS(th) |
Gate Threshold Voltage |
VDS=VGS,ID=250μA |
2 |
|
4 |
V |
|
RDS(ON) |
Drain-Source On-State Resistance |
VGS=10V, ID=40A |
|
6.8 |
7.1 |
mΩ |
|
Dynamic Characteristics |
|
gFS |
Forward Transconductance |
VDS=50V,ID=40A |
170 |
|
|
S |
|
Ciss |
Input Capacitance |
VDS=25V,VGS=0V
f=1.0MHz |
|
7633 |
|
PF |
|
Coss |
Output Capacitance |
|
916 |
|
PF |
|
Crss |
Reverse Transfer Capacitance |
|
513 |
|
PF |
|
Qg |
Total Gate Charge |
VDS=44V,ID=40A
VGS=10V |
|
158 |
|
nC |
|
Qgs |
Gate-Source Charge |
|
29 |
|
nC |
|
Qgd |
Gate-Drain Charge |
|
42 |
|
nC |
|
Switching Times |
|
td(on) |
Turn-on Delay Time |
VDD=65V,ID=40A,RL=15Ω
VGS=10V,RG=2.5Ω |
|
25 |
|
nS |
|
tr |
Turn-on Rise Time |
|
29 |
|
nS |
|
td(off) |
Turn-Off Delay Time |
|
53 |
|
nS |
|
tf |
Turn-Off Fall Time |
|
63 |
|
nS |
|
Source-Source-DDrain Diode Characteristics |
|
ISD |
Source-Drain Current(Body Diode) |
|
|
190 |
|
A |
|
ISDM |
Pulsed Source-Drain Current(Body Diode) |
|
|
760 |
|
A |
|
VSD |
(Note 1)
Forward On Voltage |
TJ=25℃,ISD=40A,VGS=0V |
|
0.85 |
1 |
V |
|
trr |
(Note 1)
Reverse Recovery Time |
TJ=25℃,IF=40A
di/dt=100A/μs |
|
95 |
|
nS |
|
Qrr |
(Note 1)
Reverse Recovery Charge |
|
189 |
|
nC |
|
ton |
Forward Turn-on Time |
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD) |
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